Features. Description. Table 1. Device summary. Quality level. Package I F (AV) V RRM T j (max) V F (max) Engineering model TO x

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Features Aerospace 2 x 20 A - 100 V Schottky rectifier Datasheet - production data Forward current: 2 x 20 A Repetitive peak voltage: 100 V Low forward voltage drop: 0.9 V Maximum junction temperature: 175 C Negligible switching losses Low capacitance High reverse avalanche surge capability Hermetic packages ESCC qualified Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in hermetically sealed surface mount and through hole packages, it is ideal for use in applications for aerospace and other harsh environments. The STPS40100HR is intended for use in medium voltage application and particularly, in high frequency circuits where low switching losses and low noise are required. Table 1. Device summary Order code ESCC detailed specification Quality level Package I F (AV) V RRM T j (max) V F (max) STPS40100C2FY1 - STPS40100C2FYT 5106/019/05 ESCC flight Engineering model TO-254 2 x 20 100 175 0.9 October 2015 DocID17306 Rev 4 1/8 This is information on a product in full production. www.st.com

Characteristics STPS40100HR 1 Characteristics Table 2. Absolute maximum ratings Symbol Characteristic Value Unit I FSM Forward surge current (per diode) (1) V RRM Repetitive peak reverse voltage (2) I RRM Repetitive peak reverse current (3) Average output rectified current (50% duty cycle): (4), (5) I O per diode per device 300 A 100 V 1 A 20 A 40 I F(RMS) Forward rms current (per diode) 30 A T OP Operating temperature range (6) (case temperature) -65 to +175 C T J Junction temperature +175 C T STG Storage temperature range (6) -65 to +175 C T SOL Soldering temperature: For TO-254 (7) +260 C dv/dt Critical rate of rise of reverse voltage 10000 V/µs 1. Sinusoidal pulse of 10 ms duration 2. Pulsed, duration 5 ms, F = 50 Hz 3. Pulsed, duration 2 µs, F = 1 khz 4. For T case +132 C per device and T case +148 C per diode, derate linearly to 0 A at +175 C. 5. The per device ratings apply only when both anode terminals are tied together. 6. For devices with hot solder dip lead finish all testing performed at T amb > +125 C are carried out in a 100% inert atmosphere. 7. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same lead shall not be re-soldered until 3 minutes have elapsed. Table 3. Thermal resistance Symbol Characteristic Value Unit R th(j-c) (1) Thermal resistance, junction to case per diode per device 1.5 1.2 C/W 1. Package mounted on infinite heatsink 2/8 DocID17306 Rev 4

Characteristics s Table 4. Electrical measurements at ambient temperature (per diode), T amb = 22 ±3 C Symbol Characteristic MIL-STD-750 test method Test conditions Min. Values Max. Units I R1 DC method, V R = 100 V - 30 µa Reverse current 4016 I R2 DC method, V R = 50 V - 5 µa V F1 (1) Pulse method, I F = 5 A - 610 mv (1) V F2 Forward voltage 4011 Pulse method, I F = 10 A - 730 mv V F3 (1) Pulse method, I F = 20 A - 900 mv C Capacitance 4001 V R = 10 V, F = 1 MHz - 1 nf Z th(j-c) (2) Relative thermal impedance, junction to case 3101 I H = 15 to 40 A, t H = 50 ms I M = 50 ma, t md = 100 µs Calculate ΔV F (3) 1. Pulse width 300µs, duty cycle 2% 2. Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go. 3. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and shall guarantee the R th(j-c) limits specified in maximum ratings. C/W Table 5. Electrical measurements at high and low temperatures (per diode) Symbol Characteristic MIL-STD-750 test method Test conditions (1) Min. Values Max. Units T I case = +125 (+0, -5) C R1 DC method, V R = 100 V Reverse current 4016 T I case = +125 (+0, -5) C R2 DC method, V R = 50 V V F2 (2) V F3 (2) Forward voltage 4011 T case = +125 (+0, -5) C pulse method, I F = 10 A T case = +125 (+0, -5) C pulse method, I F = 20 A T case = -55 (+5, -0) C pulse method, I F = 20 A - 20 ma - 7.5 ma - 660 mv - 850 mv - 950 mv 1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a 100% inspection may be performed. 2. Pulse width 300µs, duty cycle 2% DocID17306 Rev 4 3/8 8

Configurations STPS40100HR 2 Configurations Figure 1. Available device configuration 4/8 DocID17306 Rev 4

Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 3.1 TO-254 package information Figure 2. TO-254 (a) package outline R1 H B E D ØF G C A 1 2 3 N R2 ØM L K K J ØI a. The terminal identification is specified by the device configuration. See Figure 1 for terminal connections DocID17306 Rev 4 5/8 8

Package information STPS40100HR Table 6. TO-254 package mechanical data Reference Dimension in millimeters Dimension in inches Min. Max. Min. Max. A 13.59 13.84 0.535 0.545 B 13.59 13.84 0.535 0.545 C 20.07 20.32 0.790 0.800 D 6.3 6.7 0.248 0.264 E 1 3.9 0.039 0.154 ØF 3.5 3.9 0.138 0.154 G 16.89 17.4 0.665 0.685 H 6.86 BSC 0.270 BSC ØI (1) 0.89 1.14 0.035 0.045 J 3.81 BSC 0.150 BSC K 3.81 BSC 0.150 BSC L 12.95 14.5 0.510 0.571 ØM 3.05 Typ. 0.120 Typ. N - 0.71-0.028 R1 (2) - 1-0.039 R2 (3) 1.65 Typ. 0.065 1. 3 locations 2. Radius of heatsink flange corner - 4 locations 3. Radius of body corner - 4 locations 6/8 DocID17306 Rev 4

Ordering information 4 Ordering information Table 7. Ordering information (1) Order code ESCC detailed specification Package Lead finish Marking Mass EPPL Packing STPS40100C2FY1 STPS40100C2FYT 5106/019/05 TO-254 Gold Solder dip STPS40100C2FSY1 + BeO 10 g 510601905 + BeO Y Strip pack 1. Contact ST sales office for information about the specific conditions for products in die form. 5 Revision history Table 8. Document revision history Date Revision Changes 26-Mar-2010 1 Initial release. 19-Mar-2014 2 Updated Table 1: Device summary and Table 7: Ordering information. 15-Sep-2015 3 Update Features and Table 8. Reformatted to current standards. 23-Oct-2015 4 Updated Table 1 and Table 7. DocID17306 Rev 4 7/8 8

IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 2015 STMicroelectronics All rights reserved 8/8 DocID17306 Rev 4