HiPerED² M 3 I x 15 t 35ns rr High Performance ast ecovery Diode Low Loss and Soft ecovery ommon athode Part number DPG33HB Backside: cathode eatures / dvantages: pplications: Package: TO-7 Planar passivated chips ery low leakage current ery short recovery time Improved thermal behaviour ery low Irm-values ery soft recovery behaviour valanche voltage rated for reliable operation Soft reverse recovery for low EMI/I Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ntiparallel diode for high frequency switching devices ntisaturation diode Snubber diode ree wheeling diode ectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline ohs compliant Epoxy meets UL 9-13 IXYS all rights reserved Data according to IE 77and per semiconductor unless otherwise specified 1311a
ast Diode Symbol SM M I I I M Definition max. reverse recovery current 3 15 ; reverse recovery time /µs 3 T 5 T 15 T 5 T 15 T 5 T 15 atings min. typ. max. 3 forward voltage drop I 15 T 5 5 T 15 thermal resistance junction to case 1.7 K/W max. non-repetitive reverse blocking voltage reverse current, drain current onditions T 5 threshold voltage T 175.9 for power loss calculation only r slope resistance 17.3 mω thj thh max. repetitive reverse blocking voltage T 5 average forward current thermal resistance case to heatsink 3 I 15 3 rectangular d.5 P tot total power dissipation T 5 9 W T 15 SM max. forward surge current t 1 ms; (5 Hz), sine; T 5 J junction capacitance 15 f 1 MHz T 5 T 175.5.5 35 55 3 1. 1.5 1. 7 15 Unit µ m K/W p 3 ns ns 13 IXYS all rights reserved Data according to IE 77and per semiconductor unless otherwise specified 1311a
Package TO-7 atings Symbol Definition onditions min. typ. max. Unit I MS MS current 1) per terminal 5 T virtual junction temperature -55 175 T op operation temperature -55 15 T stg storage temperature -55 15 Weight M D mounting torque. mounting force with clip 1 g Nm N Product Marking Part number Logo Part No. ssembly Line ssembly ode Date ode IXYS XXXXXXXXX Zyyww abcd D P G 3 3 HB Diode HiPerED extreme fast urrent ating [] ommon athode everse oltage [] TO-7D (3) Ordering Standard Part Number Marking on Product Delivery Mode Quantity ode No. DPG33HB DPG33HB Tube 3 557 Similar Part Package oltage class DPG33PB TO-B (3) 3 DPG33P TO-3B (DPak) () 3 Equivalent ircuits for Simulation * on die level T 175 I ast Diode max threshold voltage.9 max slope resistance * 1.7 mω 13 IXYS all rights reserved Data according to IE 77and per semiconductor unless otherwise specified 1311a
Outlines TO-7 E Ø P Ø P1 D Q x E L1 x b b x e D L 3x b 1 S E1 D1 Sym. Inches Millimeter min. max. min. max..15.9.7 5.3 1.7.1.1.59.59.9 1.5.9 D.19.5.79 1.5 E.1. 15. E.17.1.31 5. e.15 BS 5. BS L.7. 19..3 L1 -.177 -.9 Ø P.1.1 3.55 3.5 Q.1. 5.3.19 S. BS.1 BS b.39.55.99 1. b.5.9 1.5.39 b.1.135.59 3.3 c.15.35.3.9 D1.515-13.7 - D..53.51 1.35 E1.53-13.5 - Ø P1 -.9-7.39 13 IXYS all rights reserved Data according to IE 77and per semiconductor unless otherwise specified 1311a
ast Diode [] T 5 15.5..3 [μ]. T 15 3 15 7.5 1 1 1 I 1 M [] 3 15 7.5..5 1. 1.5..5 ig. 1 orward current versus.1. -di [ ] ig. Typ. reverse recov. charge T 15 ig. 3 Typ. peak reverse current I M K f 1. 1..... I M 7 5 [ns] 3 T 15 3 15 7.5 1 1 1 1 [] T 15 15 t fr 3 t fr [ns] 1. 1 1 1 1 T [ ] ig. Typ. dynamic parameters,i M versus T ig. 5 Typ. recovery time ig. Typ. peak forward voltage and t fr versus di 1 1. 1 1 E 1 rec [μj] 3 15 7.5 1. 1. Z thj [K/W] 1. T 15 ig. 7 Typ. recovery energy E rec.. 1 1 1 1 1 t [ms] ig. Transient thermal resistance junction to case 13 IXYS all rights reserved Data according to IE 77and per semiconductor unless otherwise specified 1311a