High-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation

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Ordering number : EN811A MCH14/MCH4 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height :.8mm) High allowable power dissipation Specifications ( ) : MCH14 Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)8 V Collector-to-Emitter Voltage VCES (--)8 V VCEO (--) V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--) A Collector Current (Pulse) ICP (--)4 A Base Current IB (--)4 ma Collector Dissipation PC When mounted on ceramic substrate (6mm.8mm).8 W Junction Temperature Tj 1 C Storage Temperature Tstg -- to +1 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 19A-4 Product & Package Information Package : MCPH JEITA, JEDEC : SC-, SOT- Minimum Packing Quantity :, pcs./reel.1. 1.6. MCH14-TL-E MCH4-TL-E Packing Type : TL Marking to. AN LOT No. LOT No. LOT No. CS LOT No.. 1.6. TL MCH14 MCH4 Electrical Connection.8. 1 : Base : Emitter : Collector 1 1 MCPH MCH14 MCH4 Semiconductor Components Industries, LLC, 1 September, 1 881 TKIM/18EA TSIM TB-11 No.811-1/8

MCH14 / MCH4 Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(--)4V, IE=A (--)1 μa Emitter Cutoff Current IEBO VEB=(--)4V, IC=A (--)1 μa DC Current Gain hfe VCE=(--)V, IC=(--)1mA 6 Gain-Bandwidth Product ft VCE=(--)1V, IC=(--)mA 4 MHz Output Capacitance Cob VCB=(--)1V, f=1mhz (16)8 pf Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)mA (--16)1 (--)6 mv Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)1A, IB=(--)mA (--).9 (--)1. V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)1μA, IE=A (--)8 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)1μA, RBE=A (--)8 V V(BR)CEO IC=(--)1mA, RBE= (--) V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)1μA, IC=A (--)6 V Turn-On Time ton () ns Storage Time tstg See specified Test Circuit. () ns Fall Time tf (4)4 ns Switching Time Test Circuit PW=μs D.C. 1% I B1 I B OUTPUT INPUT V R R B R L Ω + + 1μF 4μF V BE = --V V CC =V IC=1IB1= --1IB=.A For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo MCH14-TL-E MCPH,pcs./reel Pb Free MCH4-TL-E MCPH,pcs./reel --. MCH14 --1.8 --1.6 --1.4 --1. --1. --.8 --.6 --.4 --1mA IC -- VCE --8mA --6mA --4mA --ma --1mA --8mA --6mA --4mA --ma. 1.8 1.6 1.4 1. 1..8.6.4 ma 4mA IC -- VCE ma MCH4 ma 1mA 1mA 8mA 6mA 4mA ma --. I B = --. --.4 --.6 --.8 --1. --1. --1.4 --1.6 --1.8 --. Collector-to-Emitter Voltage, V CE -- V IT996. I B =..4.6.8 1. 1. 1.4 1.6 1.8. Collector-to-Emitter Voltage, V CE -- V IT99 No.811-/8

MCH14 / MCH4 --. --1. MCH14 V CE = --V IC -- VBE. 1. MCH4 V CE =V IC -- VBE --1. --1. --1. --. --. Ta= C C -- C 1. 1. 1... Ta= C C -- C --.. DC Current Gain, h FE 1 --. --.4 --.6 --.8 --1...4.6.8 1. Base-to-Emitter Voltage, V BE -- V IT998 hfe -- IC MCH14 V CE = --V Ta= C C -- C DC Current Gain, h FE 1 Base-to-Emitter Voltage, V BE -- V hfe -- IC MCH4 V CE =V Ta= C C -- C IT999 Gain-Bandwidth Product, f T -- MHz --.1 -- --1. IT91 1 ft -- IC MCH14 V CE = --1V Gain-Bandwidth Product, f T -- MHz 1.1 1. IT911 ft -- IC MCH4 V CE =1V Output Capacitance, Cob -- pf --.1 -- --1. IT91 1 Cob -- VCB MCH14 f=1mhz Output Capacitance, Cob -- pf 1.1 1. 1 Cob -- VCB IT91 MCH4 f=1mhz -- --1. --1 Collector-to-Base Voltage, V CB -- V IT914 1. 1 Collector-to-Base Voltage, V CB -- V IT91 No.811-/8

MCH14 / MCH4 Collector-to-Emitter Saturation Voltage, V CE (sat) -- V -- MCH14 I C / I B =1 VCE(sat) -- IC Ta= C C -- C Collector-to-Emitter Saturation Voltage, V CE (sat) -- V MCH4 I C / I B =1.1 VCE(sat) -- IC Ta= C C -- C Collector-to-Emitter Saturation Voltage, V CE (sat) -- V Base-to-Emitter Saturation Voltage, V BE (sat) -- V --.1 --.1 -- --1. IT916 --1. --1. -- MCH14 I C / I B = VCE(sat) -- IC Ta= C C VBE(sat) -- IC Ta= -- C C -- C --.1 --.1 -- --1. IT918 C MCH14 I C / I B =1 Collector-to-Emitter Saturation Voltage, V CE (sat) -- V Base-to-Emitter Saturation Voltage, V BE (sat) -- V.1 1..1 1. IT91 MCH4 I C / I B = VCE(sat) -- IC Ta= C C -- C.1 1. IT919 VBE(sat) -- IC Ta= -- C C C MCH4 I C / I B =1 Base-to-Emitter Saturation Voltage, V BE (sat) -- V --.1 -- --1. IT911 --1. VBE(sat) -- IC Ta= -- C C C MCH14 I C / I B = Base-to-Emitter Saturation Voltage, V BE (sat) -- V 1..1 1. IT9111 VBE(sat) -- IC Ta= -- C C C MCH4 I C / I B = --.1 -- --1. IT911.1 1. IT911 No.811-4/8

MCH14 / MCH4 1. ICP=4A I C =A A S O 1ms DC operation 1ms <1μs MCH14 Ta= C / MCH4 Single pulse For PNP minus sign is omitted.1 Mounted on a ceramic board (6mm.8mm).1 1. 1 Collector-to-Emitter Voltage, V CE -- V IT9114 1ms μs 1μs Collector Dissipation, P C -- W.9.8 PC -- Ta MCH14 / MCH4 Mounted on a ceramic board (6mm.8mm)..6..4.. 4 6 8 1 1 14 16 Ambient Temperature, Ta -- C IT911 No.811-/8

MCH14 / MCH4 Taping Specification MCH14-TL-E, MCH4-TL-E No.811-6/8

MCH14 / MCH4 Outline Drawing MCH14-TL-E, MCH4-TL-E Land Pattern Example Mass (g) Unit. * For reference mm Unit: mm.4.1.6.6.6 No.811-/8

MCH14 / MCH4 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.811-8/8