Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter

Similar documents
HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

Features OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma

HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications

Features. = +25 C, Vdd = +5V, Rbias = 10 Ohms*

Features. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

Features. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*

HMC486LP5 / 486LP5E LINEAR & POWER AMPLIFIERS - SMT. SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7-9 GHz. Typical Applications.

Gain Control Range db

OBSOLETE. = +25 C, With Vdd = +5V & Vctl = 0/+5V. Parameter Frequency Min. Typ. Max. Units DC - 4 GHz GHz Attenuation Range DC - 10 GHz 10 db

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.

Features. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain

OBSOLETE. = +25 C, Vdd = Vs= +5V, Vctl= 0/ +5V. Parameter Frequency Min. Typ. Max. Units DC GHz 37. db Gain (Maximum Gain State)

OBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz. Attenuation Range DC - 3 GHz 31 db

Features. = +25 C, Vdd = +7V, Idd = 1340 ma [1]

Parameter Min. Typ. Max. Units Frequency Range GHz

OBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description

SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,

Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz GHz Attenuation Range DC - 5.

OBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC - 5.

Features OBSOLETE. = +25 C, 50 Ohm system, Vdd = +5V. Parameter Frequency Min. Typ. Max. Units GHz

HMC368LP4 / 368LP4E FREQ. MULTIPLIERS - ACTIVE - SMT. SMT GaAs PHEMT MMIC AMP-DOUBLER-AMP, 9-16 GHz OUTPUT. Typical Applications.

HMC468LP3 / 468LP3E v

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]

Features OBSOLETE. = +25 C, With 0/+5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

Features. = +25 C, Vdd = +5V, 5 dbm Drive Level

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC GHz 31.5 db

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

= +25 C, With Vee = -5V & VCTL= 0/-5V

HMC540SLP3E v db LSB SILICON MMIC 4-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, GHz

= +25 C, Vdd = Vs= P/S= +5V

Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC GHz 31.5 db

HMC948LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 1-23 GHz. Typical Applications. Features. Functional Diagram. General Description

Features = +5V. = +25 C, Vdd 1. = Vdd 2

HMC662LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 8-30 GHz. Typical Applications. Features. Functional Diagram. General Description

Features. = +25 C, 50 Ohm System, Vcc= +5V

= +25 C, 50 Ohm System, Vdd = +5V

Features. = +25 C, Vdd= +3V. Parameter Min. Typ. Max. Units Frequency Range GHz Gain db

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma

Features. Upconversion & Downconversion Applications MIXERS - SINGLE & DOUBLE BALANCED - SMT

HMC596LP4 / HMC596LP4E

Features. Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm

Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain

Features OBSOLETE. Parameter Min. Typ. Max. Units. Frequency Range GHz Insertion Loss 5 7 db. Input Return Loss 16 db

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, IF = 200 MHz, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V*

HMC349LP4C / 349LP4CE

Features. Upconversion & Downconversion Applications MIXERS - SINGLE & DOUBLE BALANCED - SMT

Features

HMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz

= +25 C, Vdd = Vs= P/S= +5V

HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram

Features. = +25 C, Vcc= 5V

DC GHz GHz

Features. = +25 C, 50 Ohm system

Features. = +25 C, Vcc = +8V

Parameter Min. Typ. Max. Units

Features +3V +5V GHz

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

HMC542LP4 / 542LP4E v

Features. = +25 C, Vdd = +5V, Idd = 400mA [1]

Features OBSOLETE. = +25 C, With 0/+5V Control, 50 Ohm System

HMC695LP4 / HMC695LP4E

Features OBSOLETE. = +25 C, as a function of Vdd. Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter

HMC546MS8G / 546MS8GE

Features. Parameter Frequency Min. Typ. Max. Units Insertion Loss DC GHz db

HMC849ALP4CE SWITCHES - SPDT - SMT. HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz. Typical Applications. Features. Functional Diagram

HMC320MS8G / 320MS8GE. Features OBSOLETE. = +25 C, Vdd = +3V

Features. Parameter Frequency Min. Typ. Max. Units Insertion Loss DC GHz db. DC GHz

Features. = +25 C, Vcc = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2

Features. = +25 C, Vcc1, Vcc2 = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2 RFOUT/4

Features. = +25 C, Vdd = +3V

Features OBSOLETE. = +25 C, 50 Ohm System GHz degrees Insertion Loss 6-15 GHz 8 11 db. Return Loss (Input and Output) 6-15 GHz 7 db

Features OBSOLETE. = +25 C, Vcc= 5V [1]

HMC478SC70 / 478SC70E v

Features. = +25 C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1]

HMC1013LP4E. SDLVAs - SMT. SUCCESSIVE DETECTION LOG VIDEO AMPLIFIER (SDLVA), GHz

Insertion Loss INSERTION LOSS () C +85C -4C Normalized Attenuation (Only Major States are Shown)

OBSOLETE. Output Power for 1 db Compression dbm Output Third Order Intercept Point (Two-Tone Output Power= 12 dbm Each Tone)

HMC659LC5 LINEAR & POWER AMPLIFIERS - SMT. GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz. Features. Typical Applications. General Description

HMC639ST89 / 639ST89E

Features. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]

HMC326MS8G / 326MS8GE

Analog Devices Welcomes Hittite Microwave Corporation

Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

HMC599ST89 / 599ST89E. Features. The HMC599ST89(E) is ideal for: = +25 C MHz. Gain Variation Over Temperature MHz 0.

GaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049

HMC662LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 8-30 GHz. Typical Applications. Features. Functional Diagram. General Description

Features. = +25 C, With 0/+5V Control, 50 Ohm System

Features. = +25 C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2 RFOUT/4

Features. = +25 C, Vcc = +3V

Features. = +25 C, Vdd= 8V, Idd= 75 ma*

Features. = +25 C, Vss= -5V, Vdd= +5V, Control Voltage= 0/ +5V, 50 Ohm System. Frequency Range GHz Insertion Loss* 4 6.

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]

Transcription:

7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram v3.61 FAILSAFE BYPASS MODE, 7-1 MHz Features Noise Figure:.9 db Output IP3: +33 dbm Gain: db Electrical Specifications, T A = +25 C, Rbias = Ohm Failsafe Operation: Bypass is enabled when LNA is unpowered Single Supply: +3V or +5V Lead 3x3mm QFN Package: 9 mm 2 General Description The HMC668LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for receivers and LNA modules operating between.7 and 1.2 GHz and provides.9 db noise figure, db of gain and +33 dbm IP3 from a single supply of +5V @ 57mA. Input and output return losses are excellent and no external matching components are required. A single control line is used to switch between LNA mode and a low loss bypass mode. The failsafe topology enables the LNA bypass path, when no DC power is available. The HMC668LP3(E) offers improved noise figure versus the previously released HMC373LP3(E). LNA Mode Bypass Mode Failsafe Mode Parameter Vdd = +3V Vdd = +5V Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Frequency Range.7-1.2.7-1.2.7-1.2.7-1.2 GHz Gain 15 13-2.5-1.5-2.5-1.5 db Gain Variation Over Temperature.3..8.8 db / C Noise Figure.85 1.1.9 1.1 db Input Return Loss 13 db Output Return Loss 13 13 13 db Reverse Isolation 22 23 - - db Power for 1dB Compression (P1dB) [1] 13 13 22 24 dbm Third Order Intercept (IP3) [2] 27 33 26 26 dbm Supply Current (Idd) 32 4 57 7.5 - ma Switching Speed (9% -1%) LNA Mode to Bypass Mode Bypass Mode to LNA Mode 85 85 [1] P1dB for LNA Mode is referenced to rfout while P1dB for Bypass and Failsafe Modes are referenced to rfin. [2] IP3 for LNA Mode is referenced to rfout while IP3 for Bypass and Failsafe Modes are referenced to rfin. - ns ns 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 24Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9

LNA - Broadband Gain & Return Loss RESPONSE (db) 25 15 1 5-1 Vdd=5V Vdd=3V LNA - Gain vs. Temperature [2] GAIN (db) NOISE FIGURE (db) v3.61 - S11-25.2.4.6.8 1 1.2 1.4 1.6 1.8 2 22 1 2 1.7 1.4 1.1.8 Vdd=5V Vdd=3V LNA - Noise Figure vs. Temperature [3] S22 S21 FAILSAFE BYPASS MODE, 7-1 MHz LNA - Gain vs. Temperature [1] GAIN (db) 22 1 LNA - Return Loss vs. Temperature [1] RETURN LOSS (db) LNA - Output IP3 vs. Temperature, Output Power @ dbm -1-48 43 38 33 28 Vdd=3V -25 Output Return Loss Input Return Loss Vdd=5V 42 37 32 27 22 7.5.2 23 Frequency (GHz) 17 [1] Vdd = 5V [2] Vdd = 3V [3] Measurement reference plane shown on evaluation PCB drawing. For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 24Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 7-2

7 v3.61 LNA - Output P1dB vs. Temperature [1] P1dB (dbm) 1 8 6 4 LNA - Gain, P1dB, Output IP3 vs. Current [1] @ 9 MHz GAIN (db), P1dB (dbm) LNA - Reverse Isolation vs. Temperature [1] ISOLATION (db) 1 8-1 - -25-3 -35 P1dB IP3 35 4 45 5 55 6 Idd (ma) Gain FAILSAFE BYPASS MODE, 7-1 MHz 46 42 38 34 3 26 LNA - Output P1dB vs. Temperature [2] P1dB (dbm) 1 8 6 4 LNA - Gain, P1dB, Output IP3 vs. Current [2] @ 9 MHz GAIN (db), P1dB (dbm) LNA - Output P1dB, Gain & Noise Figure [3] vs. Vdd @ 9 MHz GAIN (db) & P1dB (dbm) 1 8 6 15 25 3 35 P1dB Gain Idd (ma) P1dB Gain IP3 NF 4 36 32 28 24 1.1 1.9.8.7 NOISE FIGURE (db) -4 1.6 3 3.5 4 4.5 5 Voltage Supply (V) [1] Vdd = 5V [2] Vdd = 3V [3] Measurement reference plane shown on evaluation PCB drawing. 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 24Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9

Bypass Mode - Broadband Gain & Return Loss RESPONSE (db) v3.61 Bypass Mode - Input IP3 vs. Temperature, Output Power @ 5 dbm -2-4 -6-8 -1 - - - - -.2.4.6.8 1 1.2 1.4 1.6 1.8 2 36 32 28 24 S21 S11 S22 Bypass Mode - Input Return Loss vs. Temperature RETURN LOSS (db) -1 FAILSAFE BYPASS MODE, 7-1 MHz Bypass Mode - Input IP3 vs. Output Power @ 9 MHz Bypass Mode - Insertion Loss vs. Temperature GAIN (db) 4 35 3 25 15-1 5 1 15 Pout (dbm) -1-2 -3-4 Bypass Mode - Output Return Loss vs. Temperature RETURN LOSS (db) -1-7 - -25 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 24Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 7-4

7 Failsafe Mode - Broadband Gain & Return Loss RESPONSE (db) v3.61 Failsafe Mode - Input IP3 vs. Temperature, Output Power @ 5 dbm 36 32 28 24 Failsafe Mode - Input Return Loss vs. Temperature RETURN LOSS (db) -2-4 -6-8 -1 - - - - -1 S21 S11 S22 -.2.4.6.8 1 1.2 1.4 1.6 1.8 2 FAILSAFE BYPASS MODE, 7-1 MHz Failsafe Mode - Input IP3 vs. Output Power @ 9 MHz Failsafe Mode - Insertion Loss vs. Temperature GAIN (db) -1-2 -3-4 Failsafe Mode - Output Return Loss vs. Temperature RETURN LOSS (db) 4 35 3 25 15-1 5 1 15 Pout (dbm) -1 - - -25 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 24Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9

Absolute Maximum Ratings v3.61 FAILSAFE BYPASS MODE, 7-1 MHz Typical Supply Current vs. Vdd 7 Drain Bias Voltage (Vdd) Control Voltage (Vctl) RF Input Power (RFIN) LNA Mode Bypass / Failsafe Mode +6 Vdc +6 Vdc +5 dbm + dbm Channel Temperature 15 C Continuous Pdiss (T = 85 C) (derate 1.71 mw/ C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature ESD Sensitivity (HBM).7 W 93.33 C/W -65 to +15 C -4 to +85 C Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Rbias Ω Truth Table LNA Mode Bypass Mode Failsafe Mode Vdd= 3V Idd (ma) Vdd= 5V 32 57 15 26 49 47 37 [1] 1 [1] Recommended maximum Rbias Vctl = Vdd = 3 to 5V Vctl= V, Vdd = 3 to 5V Vctl = Vdd = N/C For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 24Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 7-6

7 Outline Drawing v3.61 FAILSAFE BYPASS MODE, 7-1 MHz Package Information NOTES: 1. LEADFRAME MATERIAL: Copper ALLOY 2. DIMENSIONS ARE IN INCHES [millimeters] 3. LEAD SPACING TolerANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE.5mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED.5mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE soldered TO PCB RF GROUND. 7. refer TO HITTITE AppliCATION NOTE for SUGGESTED LAND PATTERN. Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] 668 HMC668LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] 668 HMC668LP3E RoHS-compliant Low Stress Injection Molded Plastic 1% matte Sn MSL1 XXXX [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 26 C [3] 4-Digit lot number XXXX 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 24Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9

Pin Descriptions v3.61 FAILSAFE BYPASS MODE, 7-1 MHz 7 Pin Number Function Description Interface Schematic 1, 2, 4, 5, 8, 9, 11,, 13, 15 N/C 3 RFIN 6 ACG 7 RES No connection required. These pins may be connected to RF GND. Performance will not be affected. This pin is DC coupled. Off-chip DC blocking capacitor required. AC Ground. Attach bypass capacitor per application circuit. External resistor pin for current control. See table for external resistor value vs. bias current data. 1 RFOUT This pin is matched to 5 Ohms Vdd Vctl Power Supply voltage pin. External bypass capacitors required. Control voltage pin for LNA / Bypass Modes. Setting voltage equal to VDD enables LNA Mode. External Bypass capacitor required. For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 24Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 7-8

7 Application Circuit v3.61 FAILSAFE BYPASS MODE, 7-1 MHz 7-9 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 24Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9

Evaluation PCB v3.61 FAILSAFE BYPASS MODE, 7-1 MHz 7 List of Materials for Evaluation PCB 1922 [1] Item J1 - J2 J3 - J4 C1 C2 C3 C4 C5 L2 R1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 1 pf Capacitor, 42 Pkg. 8 pf Capacitor, 42 Pkg. 1 nf Capacitor, 63 Pkg. 1 µf Capacitor, 63 Pkg. 1 pf Capacitor, 63 Pkg. 15 nh Inductor, 42 Pkg. Ohm Resistor, 42 Pkg. HMC668LP3(E) Amplifier 1911 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 435 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 5 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 24Inc., One Technology Way, P.O. Box 9, Norwood, MA 62-9 7-1