TMA12N65H, TMP12N65H 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA12N65H TO-220F A12N65H TMP12N65H TO-220 P12N65H Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol TO-220F Value TO-220 Unit Drain-Source Voltage (V GS = 0V) V DSS 650 V Continuous Drain Current I D 12 A Pulsed Drain Current (note1) I DM 48 A Gate-Source Voltage V GSS ±30 V Single Pulse Avalanche Energy (note2) E AS 810 mj Avalanche Current (note1) I AR 9 A Repetitive Avalanche Energy (note1) E AR 54 mj Power Dissipation (T C = 25ºC) P D 70 223 W Operating Junction and Storage Temperature Range T J, T stg -55~+150 ºC Thermal Resistance Parameter Symbol TO-220F Value TO-220 Unit Thermal Resistance, Junction-to-Case R thjc 1.78 0.56 Thermal Resistance, Junction-to-Ambient R thja 62.5 60 ºC/W V3.0 1
TMA12N65H, TMP12N65H Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Value Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = 250µA 650 -- -- V Zero Gate Voltage Drain Current I DSS V DS = 650V, V GS = 0V, T J = 25ºC -- -- 1 V DS = 520V, V GS = 0V, T J = 125ºC -- -- 50 μa Gate-Source Leakage I GSS V GS = ±30V -- -- ±100 na Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 250µA 3 -- 4 V Drain-Source On-Resistance (Note3) R DS(on) V GS = 10V, I D = 6A -- 0.55 0.65 Ω Dynamic Input Capacitance C iss -- 1540 -- V GS = 0V, Output Capacitance C oss V DS = 25V, f = 1.0MHz -- 175 -- Reverse Transfer Capacitance C rss -- 21 -- Total Gate Charge Q g -- 44 -- Gate-Source Charge Q gs V DD = 520V, I D = 12A, V GS = 10V -- 8.6 -- Gate-Drain Charge Q gd -- 21 -- pf nc Turn-on Delay Time t d(on) -- 30 -- Turn-on Rise Time t r V DD = 325V, I D = 12A, -- 12 -- Turn-off Delay Time t d(off) R G = 25Ω -- 95 -- ns Turn-off Fall Time t f -- 22 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current I S -- -- 12 T C = 25ºC Pulsed Diode Forward Current I SM -- -- 48 A Body Diode Voltage V SD T J = 25ºC, I SD = 12A, V GS = 0V -- -- 1.4 V Reverse Recovery Time t rr V GS = 0V, I F = 12A, -- 380 -- ns Reverse Recovery Charge Q rr di F /dt = 100A/μs -- 4.5 -- μc Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 9A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. Pulse Test: Pulse width 300μs, Duty Cycle 1% V3.0 2
Typical Characteristics T J = 25ºC, unless otherwise noted TMA12N65H, TMP12N65H BV DSS, (Normalized) I D, Drain Current (A) Figure 1. Output Characteristics (T J = 25ºC) 18 16 14 12 10 8 6 4 2 0 1.2 1.15 1.1 1.05 1 0.95 20V 10V 8V 7V 6V 5V 0 2 4 6 8 10 12 14 16 18 20 V DS, Drain-to-Source Voltage (V) Figure 3. BV DSS vs. Temperature R DS(on), On-Resistance R DS(on), (Normalized) 0.75 0.7 0.65 0.6 0.55 0.5 0.45 0.4 3 2.5 2 1.5 1 0.5 Figure 2. On-Resistance vs. Drain Current T J = 25ºC V GS = 10V 0 5 10 15 20 I D, Drain Current (A) Figure 4. On-Resistance vs. Temperature 0.9-50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (ºC) 0-75 -25 25 75 125 175 T J, Junction Temperature (ºC) 12 Figure 5. Gate Charge Figure 6. Body Diode Forward Voltage VGS, Gate-to-Source Voltage (V) 10 8 6 4 2 V DD = 130V V DD = 325V V DD = 520V IS, Source Current (A) 10 1 T J = 150ºC T J = 25ºC 0 0 10 20 30 40 50 0.1 0.2 0.4 0.6 0.8 1 Q g, Total Gate Charge (nc) V SD, Source-to-Drain Voltage (V) V3.0 3
Typical Characteristics T J = 25ºC, unless otherwise noted TMA12N65H, TMP12N65H Figure 7. Transient Thermal Impedance Figure 8. Transient Thermal Impedance ZthJC, Thermal Impedance (K/W) 10 1 10 0 10-1 10-2 10-3 TO-220F D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-6 10-5 10-4 10-3 10-2 10-1 10 0 10 1 ZthJC, Thermal Impedance (K/W) 10 0 10-1 10-2 10-3 10-4 10-7 TO-220 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-6 10-5 10-4 10-3 10-2 10-1 10 0 T p, Pulse Width (s) T p, Pulse Width (s) V3.0 4
Figure A:Gate Charge Test Circuit and Waveform TMA12N65H, TMP12N65H Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform V3.0 5
TMA12N65H, TMP12N65H TO-220 V3.0 6
TMA12N65H, TMP12N65H TO-220F V3.0 7
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