UNISONIC TECHNOLOGIES CO., LTD 11A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N9 is a N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N9 is universally applied in high efficiency switch mode power supply, FEATURES * R DS(on) < 1.1Ω @ = 1V, I D = 5.5A * High switching speed * Improved dv/dt capability * 1% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 1 2 3 Packing 11N9L-TA3-T 11N9G-TA3-T TO-22 G D S Tube 11N9L-TF1-T 11N9G-TF1-T TO-22F1 G D S Tube 11N9L-TF2-T 11N9G-TF2-T TO-22F2 G D S Tube 11N9L-T3P-T 11N9G-T3P-T TO-3P G D S Tube 11N9L-T3N-T 11N9G-T3N-T TO-3PN G D S Tube 11N9L-T47-T 11N9G-T47-T TO-247 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source 1 of 7 Copyright 217 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS(T C =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage S 9 V Gate-Source Voltage S ±3 V Drain Current Continuous I D 11 A Pulsed (Note 1) I DM 44 A Avalanche Energy Single Pulsed (Note 2) E AS 1 mj Peak Diode Recovery dv/dt (Note 3) dv/dt 4. V/ns TO-22 16 W Power Dissipation TO-22F1/TO-22F2 5 W P D TO-3P/TO-3PN 215 W TO-247 19 W Junction Temperature T J +15 C Storage Temperature T STG -55 ~ +15 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS Junction to Ambient Junction to Case PARAMETER SYMBOL RATINGS UNIT TO-22/TO-22F1 62.5 C/W TO-22F2 θ JA TO-3P/TO-3PN 4 C/W TO-247 5 C/W TO-22.78 C/W TO-22F1/TO-22F2 2.48 C/W θ JC TO-3P/TO-3PN.58 C/W TO-247.65 C/W UNISONIC TECHNOLOGIES CO., LTD 3 of 7
ELECTRICAL CHARACTERISTICS (T C =25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BS I D =25µA, =V 9 V Breakdown Voltage Temperature Coefficient BS / T J I D =25µA, Referenced to 25 C 1. V/ C Drain-Source Leakage Current I DSS =9V, =V 1 =72V, T C =125 C 1 µa Gate- Source Leakage Current Forward =+3V, =V 1 na I GSS Reverse =-3V, =V -1 na ON CHARACTERISTICS Gate Threshold Voltage (TH) =, I D =25µA 3. 5. V Static Drain-Source On-State Resistance R DS(ON) =1V, I D =5.5A.91 1.1 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 98 138 pf Output Capacitance C OSS =V, =25V, f=1.mhz 17 28 pf Reverse Transfer Capacitance C RSS 18 25 pf SWITCHING PARAMETERS Total Gate Charge Q G 6 8 nc =1V, =5V, I D =1.3A Gate to Source Charge Q GS 14 nc (Note 4, 5) Gate to Drain Charge Q GD 22 nc Turn-ON Delay Time t D(ON) 125 14 ns Rise Time t R =3V, I D =.5A, R G =25Ω 26 32 ns Turn-OFF Delay Time t D(OFF) (Note 4, 5) 34 38 ns Fall-Time t F 22 27 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 11 A Maximum Body-Diode Pulsed Current (Note1) I SM 44 A Drain-Source Diode Forward Voltage (Note 4) V SD I S =11A, =V 1.4 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L = 15mH, I AS = 11A, = 5V, R G = 25Ω, Starting T J = 25 C 3. I SD 11.A, di/dt 2A/µs, BS, Starting T J = 25 C 4. Pulse Test: Pulse width 3µs, Duty cycle 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD 4 of 7
TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms Same Type as DUT 12V 1V Q G 2nF 5kΩ 3nF Q GS Q GD 3mA DUT Charge Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms BS E AS = 1 2 2 LIAS BS - R G I D L BS I AS 1V I D (t) t P DUT (t) t P Time UNISONIC TECHNOLOGIES CO., LTD 5 of 7
TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + R G - L I SD Driver Same Type as DUT dv/dt controlled by R G I SD controlled by pulse period (Driver ) Gate Pulse Width D= Gate Pulse Period 1V I FM, Body Diode Forward Current I SD (DUT) di/dt I RM Body Diode Reverse Current (DUT) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD 6 of 7
TYPICAL CHARACTERISTICS 3 Drain Current vs. Drain-Source Breakdown Voltage 3 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µa) 25 2 15 1 5 Drain Current, ID (µa) 25 2 15 1 5 3 6 9 12 Drain-Source Breakdown Voltage, BS (V) 1 2 3 4 5 6 Gate Threshold Voltage, V TH (V) Drain Current, ID (A) 6 5 4 3 2 1 Drain-Source On-State Resistance Characteristics =1V, I D =5.5A 1 2 3 4 5 Drain to Source Voltage, (V) Body-Diode Continuous Current, IS (A) 25 2 15 1 5 6 Body-Diode Continuous Current vs. Source to Drain Voltage.2.4.6.8 1. Source to Drain Voltage, V SD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 7 of 7