UNISONIC TECHNOLOGIES CO., LTD

Similar documents
UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UTT100N06

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UT50N04

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 5N60

UNISONIC TECHNOLOGIES CO., LTD UTT52N15H

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UFC8N80K

UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UFZ24N-F

UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 5N60K-MTQ Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ

UNISONIC TECHNOLOGIES CO., LTD UTT200N03

UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UTT36N05 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 3N80

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UTT18P10

UNISONIC TECHNOLOGIES CO., LTD UTT50P04

UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13NM50-U2

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 02NM60 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 13NM60

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UTT100N08M Advance POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)

UNISONIC TECHNOLOGIES CO., LTD UT4435

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD ULB4132 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UT60N03

8N Amps, 600/650 Volts N-CHANNEL POWER MOSFET 8N60 MOSFET N 600V 7.5A 1,2 OHM. Power MOSFET. DESCRIPTION FEATURES

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UT50N03

UNISONIC TECHNOLOGIES CO., LTD UT4411

UNISONIC TECHNOLOGIES CO., LTD UTD408

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UF830

T C =25 unless otherwise specified

Single Pulsed (Note 4) E AS 1100 mj Repetitive (Note 5) E AR 29 mj Peak Diode Recovery dv/dt (Note 5) dv/dt 15 V/ns 290 TO-3PL P D 220

UNISONIC TECHNOLOGIES CO., LTD UT4413

UNISONIC TECHNOLOGIES CO., LTD 2N7002K

UNISONIC TECHNOLOGIES CO., LTD UT3N01Z

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

HCS80R1K4E 800V N-Channel Super Junction MOSFET

HCI70R500E 700V N-Channel Super Junction MOSFET

HCD80R1K4E 800V N-Channel Super Junction MOSFET

HCS80R380R 800V N-Channel Super Junction MOSFET

UNISONIC TECHNOLOGIES CO., LTD UT4422

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

UNISONIC TECHNOLOGIES CO., LTD UT100N03

12N60 12N65 Power MOSFET

Transcription:

UNISONIC TECHNOLOGIES CO., LTD 11A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N9 is a N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 11N9 is universally applied in high efficiency switch mode power supply, FEATURES * R DS(on) < 1.1Ω @ = 1V, I D = 5.5A * High switching speed * Improved dv/dt capability * 1% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 1 2 3 Packing 11N9L-TA3-T 11N9G-TA3-T TO-22 G D S Tube 11N9L-TF1-T 11N9G-TF1-T TO-22F1 G D S Tube 11N9L-TF2-T 11N9G-TF2-T TO-22F2 G D S Tube 11N9L-T3P-T 11N9G-T3P-T TO-3P G D S Tube 11N9L-T3N-T 11N9G-T3N-T TO-3PN G D S Tube 11N9L-T47-T 11N9G-T47-T TO-247 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source 1 of 7 Copyright 217 Unisonic Technologies Co., Ltd

MARKING UNISONIC TECHNOLOGIES CO., LTD 2 of 7

ABSOLUTE MAXIMUM RATINGS(T C =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage S 9 V Gate-Source Voltage S ±3 V Drain Current Continuous I D 11 A Pulsed (Note 1) I DM 44 A Avalanche Energy Single Pulsed (Note 2) E AS 1 mj Peak Diode Recovery dv/dt (Note 3) dv/dt 4. V/ns TO-22 16 W Power Dissipation TO-22F1/TO-22F2 5 W P D TO-3P/TO-3PN 215 W TO-247 19 W Junction Temperature T J +15 C Storage Temperature T STG -55 ~ +15 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS Junction to Ambient Junction to Case PARAMETER SYMBOL RATINGS UNIT TO-22/TO-22F1 62.5 C/W TO-22F2 θ JA TO-3P/TO-3PN 4 C/W TO-247 5 C/W TO-22.78 C/W TO-22F1/TO-22F2 2.48 C/W θ JC TO-3P/TO-3PN.58 C/W TO-247.65 C/W UNISONIC TECHNOLOGIES CO., LTD 3 of 7

ELECTRICAL CHARACTERISTICS (T C =25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BS I D =25µA, =V 9 V Breakdown Voltage Temperature Coefficient BS / T J I D =25µA, Referenced to 25 C 1. V/ C Drain-Source Leakage Current I DSS =9V, =V 1 =72V, T C =125 C 1 µa Gate- Source Leakage Current Forward =+3V, =V 1 na I GSS Reverse =-3V, =V -1 na ON CHARACTERISTICS Gate Threshold Voltage (TH) =, I D =25µA 3. 5. V Static Drain-Source On-State Resistance R DS(ON) =1V, I D =5.5A.91 1.1 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 98 138 pf Output Capacitance C OSS =V, =25V, f=1.mhz 17 28 pf Reverse Transfer Capacitance C RSS 18 25 pf SWITCHING PARAMETERS Total Gate Charge Q G 6 8 nc =1V, =5V, I D =1.3A Gate to Source Charge Q GS 14 nc (Note 4, 5) Gate to Drain Charge Q GD 22 nc Turn-ON Delay Time t D(ON) 125 14 ns Rise Time t R =3V, I D =.5A, R G =25Ω 26 32 ns Turn-OFF Delay Time t D(OFF) (Note 4, 5) 34 38 ns Fall-Time t F 22 27 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 11 A Maximum Body-Diode Pulsed Current (Note1) I SM 44 A Drain-Source Diode Forward Voltage (Note 4) V SD I S =11A, =V 1.4 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L = 15mH, I AS = 11A, = 5V, R G = 25Ω, Starting T J = 25 C 3. I SD 11.A, di/dt 2A/µs, BS, Starting T J = 25 C 4. Pulse Test: Pulse width 3µs, Duty cycle 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD 4 of 7

TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms Same Type as DUT 12V 1V Q G 2nF 5kΩ 3nF Q GS Q GD 3mA DUT Charge Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms BS E AS = 1 2 2 LIAS BS - R G I D L BS I AS 1V I D (t) t P DUT (t) t P Time UNISONIC TECHNOLOGIES CO., LTD 5 of 7

TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + R G - L I SD Driver Same Type as DUT dv/dt controlled by R G I SD controlled by pulse period (Driver ) Gate Pulse Width D= Gate Pulse Period 1V I FM, Body Diode Forward Current I SD (DUT) di/dt I RM Body Diode Reverse Current (DUT) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD 6 of 7

TYPICAL CHARACTERISTICS 3 Drain Current vs. Drain-Source Breakdown Voltage 3 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µa) 25 2 15 1 5 Drain Current, ID (µa) 25 2 15 1 5 3 6 9 12 Drain-Source Breakdown Voltage, BS (V) 1 2 3 4 5 6 Gate Threshold Voltage, V TH (V) Drain Current, ID (A) 6 5 4 3 2 1 Drain-Source On-State Resistance Characteristics =1V, I D =5.5A 1 2 3 4 5 Drain to Source Voltage, (V) Body-Diode Continuous Current, IS (A) 25 2 15 1 5 6 Body-Diode Continuous Current vs. Source to Drain Voltage.2.4.6.8 1. Source to Drain Voltage, V SD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 7 of 7