Order code V DS R DS(on) max. I D P TOT

Datasheet Automotivegrade Nchannel 65 V,.58 Ω typ., 48 A, MDmesh DM2 Power MOSFET in a TO247 package Features Order code V DS R DS(on) max. I D P TOT STW58N65DM2AG 65 V.65 Ω 48 A 36 W TO247 D(2) 1 3 2 AECQ11 qualified Fastrecovery body diode Extremely low gate charge and input capacitance Low onresistance 1% avalanche tested Extremely high dv/dt ruggedness Zenerprotected G(1) S(3) Product status link STW58N65DM2AG NG1D2S3Z Applications Switching applications Description This highvoltage Nchannel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Q rr ) and time (t rr ) combined with low R DS(on), rendering it suitable for the most demanding highefficiency converters and ideal for bridge topologies and ZVS phaseshift converters. Product summary Order code Marking Package Packing STW58N65DM2AG 58N65DM2 TO247 Tube DS11265 Rev 3 July 218 For further information contact your local STMicroelectronics sales office. www.st.com

Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V GS Gatesource voltage ±25 V I Drain current (continuous) at T case = 25 C 48 D Drain current (continuous) at T case = 1 C 3 A I DM (1) Drain current (pulsed) 15 A P TOT Total dissipation at T case = 25 C 36 W dv/dt (2) Peak diode recovery voltage slope 5 dv/dt (3) MOSFET dv/dt ruggedness 5 V/ns T stg T J Storage temperature range Operating junction temperature range 55 to 15 C 1. Pulse width is limited by safe operating area. 2. I SD 48 A, di/dt=8 A/μs, V DS peak < V (BR)DSS, V DD = 8% V (BR)DSS 3. V DS 52 V Table 2. Thermal data Symbol Parameter Value Unit R thjcase Thermal resistance junctioncase.35 R thjamb Thermal resistance junctionambient 5 C/W Table 3. Avalanche characteristics Symbol Parameter Value Unit I (1) AR Avalanche current, repetitive or not repetitive 7 A E (2) AS Single pulse avalanche energy 13 mj 1. Pulse width is limited by T Jmax. 2. Starting T J = 25 C, I D = I AR, V DD = 5 V DS11265 Rev 3 page 2/13

Electrical characteristics 2 Electrical characteristics (T case = 25 C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drainsource breakdown voltage V GS = V, I D = 1 ma 65 V V GS = V, V DS = 65 V 1 I DSS Zero gate voltage drain current V GS = V, V DS = 65 V, T case = 125 C (1) 1 µa I GSS Gatebody leakage current V DS = V, V GS = ±25 V ±5 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 25 µa 3 4 5 V R DS(on) Static drainsource onresistance V GS = 1 V, I D = 24 A.58.65 Ω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance 41 C oss Output capacitance V DS = 1 V, f = 1 MHz, V GS = V 16 pf C rss Reverse transfer capacitance 2.5 C oss eq. (1) Equivalent output capacitance V DS = to 52 V, V GS = V 375 pf R G Intrinsic gate resistance f = 1 MHz, I D = A 4.1 Ω Q g Total gate charge V DD = 52 V, I D = 48 A, 88 Q gs Gatesource charge V GS = to 1 V 22 Q gd Gatedrain charge (see Figure 14. Test circuit for gate charge behavior) 37 nc 1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from to 8% V DSS Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turnon delay time Rise time Turnoff delay time Fall time V DD = 325 V, I D = 24 A, R G = 4.7 Ω, V GS = 1 V (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) 28 31 157 7.7 ns DS11265 Rev 3 page 3/13

Electrical characteristics Table 7. Sourcedrain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Sourcedrain current 48 A I (1) SDM Sourcedrain current (pulsed) 15 A V (2) SD Forward on voltage V GS = V, I SD = 48 A 1.6 V t rr Reverse recovery time I SD = 48 A, di/dt = 1 A/µs, 135 ns Q rr Reverse recovery charge V DD = 1 V.68 µc I RRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode 1 A recovery times) t rr Reverse recovery time I SD = 48 A, di/dt = 1 A/µs, 26 ns Q rr Reverse recovery charge V DD = 1 V, T J = 15 C 2.75 µc I RRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) 21 A 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 3 µs, duty cycle 1.5%. DS11265 Rev 3 page 4/13

Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance I D (A) GADG2762181145SOA K TO247EZx8 1 2 Operation in this area is limited by RDS(on) tp =1 µs 1 1 tp =1 µs 1 1 Zth=k*Rthjc 1 1 1 Single pulse T j 15 C T c = 25 C 1 2 1 1 1 1 1 1 2 tp =1 ms tp =1 ms V DS (V) 1 2 1 3 1 5 1 4 1 3 1 2 1 1 t p (s) Figure 3. Output characteristics Figure 4. Transfer characteristics I D (A) 14 12 1 GIPG9915FQFBWOCH V GS = 9,1 V V GS = 8 V V GS = 7 V I D (A) 14 12 1 V DS = 2 V GIPG9915FQFBWTCH 8 8 6 6 4 V GS = 6 V 2 V GS = 5 V 4 8 12 16 V DS (V) 4 2 2 4 6 8 V GS (V) Figure 5. Gate charge vs gatesource voltage Figure 6. Static drainsource onresistance V GS (V) 12 1 V DS GIPG9915FQFBWQVG V DS (V) V DD = 52 V, I D = 48 A 6 5 R DS(on) (Ω).66 V GS = 1 V GIPG9915FQFBWRID 8 4.62 6 3.58 4 2 2 1.54 2 4 6 8 1 Q g (nc).5 8 16 24 32 4 I D (A) DS11265 Rev 3 page 5/13

Electrical characteristics (curves) C (pf) 1 4 1 3 1 2 Figure 7. Capacitance variations GIPG9915FQFBWCVR C ISS C OSS Figure 8. Normalized gate threshold voltage vs temperature V GS(th) (norm.) 1.1 1..9 I D = 25 µa GIPG9915FQFBWVTH 1 1 f = 1 MHz C RSS.8.7 1 1 1 1 1 1 1 2 V DS (V).6 75 25 25 75 125 T j ( C) Figure 9. Normalized onresistance vs temperature Figure 1. Normalized V (BR)DSS vs temperature R DS(on) (norm.) 2.2 V GS = 1 V GIPG9915FQFBWRON V (BR)DSS (norm.) 1.12 I D = 1 ma GIPG9915FQFBWBDV 1.8 1.8 1.4 1.4 1. 1..96.6.92.2 75 25 25 75 125 T j ( C).88 75 25 25 75 125 T j ( C) Figure 11. Output capacitance stored energy Figure 12. Source drain diode forward characteristics E OSS (µj) 28 24 GIPG9915FQFBWEOS V SD (V) 1.1 GIPG9915FQFBWSDF T j = 5 C 2.9 T j = 25 C 16 12.7 T j = 15 C 8 4.5 1 2 3 4 5 6 V DS (V).3 8 16 24 32 4 I SD (A) DS11265 Rev 3 page 6/13

Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD VD RL + 22 μf 3.3 μf VDD VGS 12 V IG= CONST 47 kω 1 Ω 1 nf D.U.T. 1 kω VGS pulse width RG D.U.T. pulse width 22 μf + 2.7 kω 47 kω VG 1 kω AM1468v1 AM1469v1 Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit G 25 Ω A D D.U.T. S B A fast diode B A B G 1 µh 3.3 1 D µf + µf VDD D.U.T. VD ID L + 22 µf 3.3 µf VDD + _ RG S Vi pulse width D.U.T. AM1471v1 AM147v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS t on t off VD t d(on) t r t d(off) t f 9% 9% IDM ID 1% V DS 1% VDD VDD V GS 9% AM1472v1 1% AM1473v1 DS11265 Rev 3 page 7/13

Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS11265 Rev 3 page 8/13

TO247 package information 4.1 TO247 package information Figure 19. TO247 package outline 75325_9 DS11265 Rev 3 page 9/13

TO247 package information Table 8. TO247 package mechanical data Dim. mm Min. Typ. Max. A 4.85 5.15 A1 2.2 2.6 b 1. 1.4 b1 2. 2.4 b2 3. 3.4 c.4.8 D 19.85 2.15 E 15.45 15.75 e 5.3 5.45 5.6 L 14.2 14.8 L1 3.7 4.3 L2 18.5 ØP 3.55 3.65 ØR 4.5 5.5 S 5.3 5.5 5.7 DS11265 Rev 3 page 1/13

Revision history Date Version Changes 9Sep215 1 Initial release. Table 9. Document revision history 15Sep215 2 2Jul218 3 In section Electrical characteristics (curves): updated figure Safe operating area Removed maturity status indication from cover page. The document status is production data. Updated Table 1. Absolute maximum ratings and Table 7. Sourcedrain diode. Updated Figure 1. Safe operating area. Minor text changes DS11265 Rev 3 page 11/13

Contents Contents 1 Electrical ratings...2 2 Electrical characteristics...3 2.1 Electrical characteristics (curves)... 5 3 Test circuits...7 4 Package information...8 4.1 TO247 package information...8 Revision history...11 DS11265 Rev 3 page 12/13

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