N-Channel Enhancement Mode MOSFET Features 100 V/8 A R DS(ON) = 20 m Ω (typ.) @ V GS =10V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description D D D D S S S G Top View of SOP-8 Applications Power Management in DC/DC Converter D G N-Channel MOSFET S Ordering and Marking Information S HY0810 ÿ YYXXXJWW G Package Code S : SOP-8 Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 150623
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage V GSS Gate-Source Voltage ±20 T J Maximum Junction Temperature 150 C T STG Storage Temperature Range -55 to 150 C I S Diode Continuous Forward Current T C =25 C 4 A Mounted on Large Heat Sink I DM Pulsed Drain Current * T C =25 C 32** A I D P D Continuous Drain Current Maximum Power Dissipation E AS Avalanche Energy, Single Pulsed L=0.5mH 80*** mj 100 T C =25 C 8 T C =70 C 6 T C =25 C 3.5 T C =70 C 2.2 R θjc Thermal Resistance-Junction to Case 36 R θja Thermal Resistance-Junction to Ambient 70 Avalanche Ratings Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=80V Electrical Characteristics (T C = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Static Characteristics HY0810 Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250µA 100 - - V I DSS Zero Gate Voltage Drain Current V DS = 100V, V GS =0V - - 1 T J =85 C - - 30 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =250µA 1.0 2.0 3.0 V I GSS Gate Leakage Current V GS =±20V, V DS =0V - - ±100 na R DS(ON) Diode Characteristics V A W C/W V GS =10V, I DS =8 A - 20 25 mω V SD * Diode Forward Voltage I SD =4A, V GS =0V - 0.7 1.0 V t rr Reverse Recovery Time - 40 - ns I DS =4 A, dl SD /dt=100a/µs Reverse Recovery Charge - 74 - nc Q rr * Drain-Source On-state Resistance Unit V GS =4.5V, I DS =6 A 24 32 mω µa 2
Electrical Characteristics (Cont.) (T C = 25 C Unless Otherwise Noted) HY0810 Symbol Parameter Test Conditions Unit Min. Typ. Max. Dynamic Characteristics R G Gate Resistance V GS =0V,V DS =0V,F=1MHz - 1.0 - Ω C iss Input Capacitance V GS =0V, - 1550 - C oss Output Capacitance V DS =25V, - 110 - Reverse Transfer Capacitance Frequency=1.0MHz - 50 - C rss t d(on) Turn-on Delay Time - 12 - T r Turn-on Rise Time V DD =50V, R G =6 Ω, - 5.5 - I DS =8A, V GS =10V, t d(off) Turn-off Delay Time - 38 - T f Turn-off Fall Time - 6 - Gate Charge Characteristics Q g Total Gate Charge - 20 - Q gs Gate-Source Charge V DS =80V, V GS =10V, I DS =8 A - 6 - Gate-Drain Charge - 9 - Q gd Note * : Pulse test ; pulse width 300µs, duty cycle 2%. pf ns nc 3
Typical Operating Characteristics 4.0 3.5 3.0 Power Dissipation 9 8 7 Drain Current Ptot - Power (W) 2.5 2.0 1.5 1.0 ID - Drain Current (A) 6 5 4 3 2 0.5 T A =25 o C 0.0 0 20 40 60 80 100 120 140 160 1 T A =25 o C,V G =10V 0 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature ( C) Tj - Junction Temperature Safe Operation Area ID - Drain Current (A) 50 10 1 0.1 Rds(on) Limit 100us 1ms 10ms DC T C =25 O C 0.01 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 100 Normalized Effective Transient 10 1 0.1 0.01 Single 0.01 0.02 0.05 0.1 Duty = 0.5 0.2 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration sec Mounted on minimum pad R θja : 70 o C/W 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance ID - Drain Current (A) 20 18 16 14 12 10 8 6 4 2 V GS =6,7,8,9,10V 5V 4V 3V RDS(ON) - On - Resistance (mω) 32 28 24 20 16 12 8 4 V GS =4.5V V GS =10V 0 0 0.5 1 1.5 2 2.5 VDS - Drain - Source Voltage (V) 0 0 3 6 9 12 15 ID- Drain Current (A) Gate-SourceOn Resistance Gate Threshold Voltage 50 I DS =8A 1.6 I DS =250mA 45 1.4 RDS(ON) - On - Resistance (mw) 40 35 30 25 20 Normalized Threshold Voltage 1.2 1.0 0.8 0.6 0.4 15 2 3 4 5 6 7 8 9 10 0.2-50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-SourceOn Resistance Source-Drain Diode Forward 2.2 2.0 V GS = 10V I DS = 8A 30 1.8 10 NormalizedOn Resistance 1.6 1.4 1.2 1.0 0.8 0.6 IS - Source Current (A) 1 T j =150 o C T j =25 o C 0.4 R ON @T j =25 o C: 20mW 0.2-50 -25 0 25 50 75 100 125 150 Tj - Junction Temperature ( C) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 3600 Frequency=1MHz 3200 2800 2400 2000 Ciss 1600 1200 800 400 Coss Crss 0 0 8 16 24 32 40 VGS - Gate-source Voltage (V) 10 9 8 7 6 5 4 3 2 1 V DS = 80V I DS = 8A 0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) QG - Gate Charge (nc) 6
Avalanche Test Circuit and Waveforms V DS L t p V DSX(SUS) DUT V DS I AS R G V DD V DD tp I L 0.01W E AS t AV Avalanche Test Circuit and Waveforms V DS DUT R D V DS 90% V GS R G V DD 10% tp V GS t d(on) t r t d(off) t f 7
Package Information SOP-8 D -T- SEATING PLANE < 4 mils SEE VIEW A E1 h X 45 E e b c A1 A2 A VIEW A L 0.25 GAUGE PLANE SEATING PLANE S Y M B MILLIMETERS O L MIN. MAX. A A1 c D E E1 e h L 0.10 1.75 0.25 b 0.31 0.51 0-0.17 0.25 SOP-8 1.27 BSC 0.050 BSC 0.25 0.50 0.010 0.020 0.40 1.27 MIN. 0.004 INCHES MAX. A2 1.25-0.049-4.80 5.80 3.80 6.20 4.00 0.069 0.010 0.012 0.020 0.007 0.010 5.00 0.189 0.197 0.228 0.244 0.150 0.157 0.016 0.050 0 8 0 8 Note: 1. Follow JEDEC MS-012 AA. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. - RECOMMENDED LAND PATTERN 1.27 2.2 5.74 2.87 0.8 0.635 UNIT: mm 8
Carrier Tape & Reel Dimensions OD0 P0 P2 P1 A d H A E1 OD1 B A T B0 W F K0 B A0 SECTION A-A SECTION B-B T1 Application A H T1 C d D W E1 F 330.0 12.4+2.00 2.00 50 MIN. -0.00 13.0+0.50-0.20 1.5 MIN. 20.2 MIN. 12.0 0.30 1.75 0.10 5.5 0.05 SOP-8 P0 P1 P2 D0 D1 T A0 B0 K0 4.0 0.10 8.0 0.10 2.0 0.05 1.5+0.10 1.5 MIN. 0.6+0.00 6.40 0.20 5.20 0.20 2.10 0.20-0.00-0.40 (mm) 9
Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile 10
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds Average ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) 350 <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness <350 350-2000 >2000 <1.6 mm 260 C 260 C 260 C 1.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B102 5 Sec, 245 C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121 C TCT JESD-22, A104 500 Cycles, -65 C~150 C 11
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds Average ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) 350 <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness <350 350-2000 >2000 <1.6 mm 260 C 260 C 260 C 1.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B102 5 Sec, 245 C HOLT JESD-22, A108 1000 Hrs, Bias @ 125 C PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121 C TCT JESD-22, A104 500 Cycles, -65 C~150 C 12