N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 R DS(ON) = mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G D S G D S TO-252-2L TO-251-3L TO-251-3L Applications D Power Management for Inverter Systems. G N-Channel MOSFET S Ordering and Marking Information D HY1908 ÿ YYXXXJWW G U HY1908 ÿ YYXXXJWW G S HY1908 ÿ YYXXXJWW G Package Code D : TO-252-2L S : TO-251-3L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 0% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 150709
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 80 V GSS Gate-Source Voltage ±25 T J Maximum Junction Temperature 175 C T STG Storage Temperature Range -55 to 175 C I S Diode Continuous Forward Current T C =25 C 90 A Mounted on Large Heat Sink I DM Pulsed Drain Current * T C =25 C 315** A I D P D Continuous Drain Current T C =25 C 90 T C =0 C 59 A Maximum Power Dissipation T C =25 C 64 T C =0 C 32 W R θjc Thermal Resistance-Junction to Case 2.35 C/W R θja Thermal Resistance-Junction to Ambient 1 Avalanche Ratings E AS Avalanche Energy, Single Pulsed L=0.5mH 214*** mj Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=64V Electrical Characteristics (T C = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions HY1908 Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250µA 80 - - V I DSS V DS =80V, V GS =0V - - 1 Zero Gate Voltage Drain Current µa T J =85 C - - V GS(th) Gate Threshold Voltage V DS =V GS, I DS =250µA 2 3 4 V I GSS Gate Leakage Current V GS =±25V, V DS =0V - - ±0 na R DS(ON) * Drain-Source On-state Resistance V GS =V, I DS =45A - 7.8 9.0 mω Diode Characteristics V SD * Diode Forward Voltage I SD =45A, VGS=0V - 0.8 1.2 V t rr Reverse Recovery Time - 30 - ns I SD =45A, dl SD /dt=0a/µs Reverse Recovery Charge - 25 - nc Q rr V 2
Electrical Characteristics (Cont.) (T C = 25 C Unless Otherwise Noted) HY1908 Symbol Parameter Test Conditions Unit Min. Typ. Max. Dynamic Characteristics R G Gate Resistance V GS =0V,V DS =0V,F=1MHz - 1.2 - Ω C iss Input Capacitance V GS =0V, - 3864 - C oss Output Capacitance V DS =25V, - 365 - Reverse Transfer Capacitance Frequency=1.0MHz - 239 - C rss t d(on) Turn-on Delay Time - 26 - T r Turn-on Rise Time V DD =40V, R G =6 Ω, - 42 - I DS =45A, V GS =V, t d(off) Turn-off Delay Time - 64 - T f Turn-off Fall Time - 20 - Gate Charge Characteristics Q g Total Gate Charge - 84 - Q gs Gate-Source Charge V DS =64V, V GS =V, I DS =45A - 16 - Gate-Drain Charge - 26 - Q gd Note * : Pulse test ; pulse width 300µs, duty cycle 2%. pf ns nc 3
Typical Operating Characteristics Power Dissipation Drain Current Ptot - Power (W) 5 90 75 60 45 30 15 T C =25 o C 0 0 20 40 60 80 0 120 140 160 180 200 ID - Drain Current (A) 90 limited by package 80 70 60 50 40 30 20 T C =25 o C,V G =V 0 0 20 40 60 80 0 120 140 160 180 200 Tc- Temperature ( C) Tc-Case Temperature ( C) Case 500 Safe Operation Area ID - Drain Current (A) 0 1 Rds(on) Limit 0us 1ms ms DC T C =25 O C 0.1 0.1 1 0 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Thermal impedance (Zthjc) 1 0.1 0.01 Single 0.01 0.02 0.05 0.1 Duty = 0.5 0.2 Mounted on minimum pad R θja : 1 o C/W 0.001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 140 11 ID - Drain Current (A) 120 0 80 60 40 20 V GS =6,7,8,9,V 5V 4V 3V RDS(ON) - On - Resistance (mω) 9 8 7 6 5 4 V GS =V 0 0 1 2 3 4 5 VDS - Drain - Source Voltage (V) 3 0 20 40 60 80 0 ID- Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 40 I DS =45A 1.6 I DS =250µA 35 1.4 RDS(ON) - On - Resistance (mω) 30 25 20 15 5 Normalized Threshold Voltage 1.2 1.0 0.8 0.6 0.4 0 3 4 5 6 7 8 9 VGS - Gate - Source Voltage (V) 0.2-50 -25 0 25 50 75 0 125 150 175 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.5 V GS = V I DS = 45A 0 2.0 Normalized On Resistance 1.5 1.0 0.5 IS - Source Current (A) 1 T j =175 o C T j =25 o C R ON @T j =25 o C: 7.8mΩ 0.0-50 -25 0 25 50 75 0 125 150 175 Tj- Junction Temperature ( C) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 5400 Frequency=1MHz 4800 Ciss 4200 3600 3000 2400 1800 1200 600 Coss Crss 0 0 5 15 20 25 30 35 40 VGS - Gate-source Voltage (V) 9 8 7 6 5 4 3 2 1 V DS = 64V I DS = 45A 0 0 20 40 60 80 0 VDS - Drain - Source Voltage (V) QG -Gate Charge (nc) 6
Avalanche Test Circuit and Waveforms V DS L t p V DSX(SUS) DUT V DS I AS R G V DD V DD tp I L 0.01W E AS t AV Avalanche Test Circuit and Waveforms V DS DUT R D V DS 90% V GS R G V DD % tp V GS t d(on) t r t d(off) t f 7
Package Information TO-252-2L 8
TO-251-3L(IPAK) 9
TO-251-3L(SIPAK)
Devices Per Unit Package Type Unit Quantity TO-252-2L Tube 72 TO-251-3L Tube 72 Classification Profile 11
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 0 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds Average ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 350 <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm 3 350-2000 Volume mm 3 >2000 <1.6 mm 260 C 260 C 260 C 1.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HOLT JESD-22, A8 00 Hrs, Bias @ 125 C PCT JESD-22, A2 168 Hrs, 0%RH, 2atm, 121 C TCT JESD-22, A4 500 Cycles, -65 C~150 C 12