INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free G IRG4PC40KPbF Short Circuit Rated UltraFast IGBT C E n-channel PD - 95646 V CES = 600V V CE(on) typ. = 2.V @, I C = 25A Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Absolute Maximum Ratings TO-247AC Parameter Max. Units V CES Collector-to-Emitter Voltage 600 V I C @ T C = 25 C Continuous Collector Current 42 I C @ T C = 0 C Continuous Collector Current 25 A I CM Pulsed Collector Current 84 I LM Clamped Inductive Load Current 84 t sc Short Circuit Withstand Time µs V GE Gate-to-Emitter Voltage ±20 V E ARV Reverse Voltage Avalanche Energy ƒ 5 mj P D @ T C = 25 C Maximum Power Dissipation 60 W P D @ T C = 0 C Maximum Power Dissipation 65 T J Operating Junction and-55 to +50 T STG Storage Temperature Range C Soldering Temperature, for sec. 300 (0.063 in. (.6mm) from case) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.77 R θcs Case-to-Sink, Flat, Greased Surface 0.24 C/W R θja Junction-to-Ambient, typical socket mount 40 Wt Weight 6 (0.2) g (oz) 7/26/04
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA V (BR)ECS Emitter-to-Collector Breakdown Voltage 8 V V GE = 0V, I C =.0A V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage 0.46 V/ C V GE = 0V, I C =.0mA 2. 2.6 I C = 25A V CE(ON) Collector-to-Emitter Saturation Voltage 2.70 I C = 42A See Fig.2, 5 V 2.4 I C = 25A, T J = 50 C V GE(th) Gate Threshold Voltage 3.0 6.0 V CE = V GE, I C = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -3 mv/ C V CE = V GE, I C = 250µA g fe Forward Transconductance 7.0 4 S V CE = 0 V, I C = 25A 250 V GE = 0V, V CE = 600V I CES Zero Gate Voltage Collector Current µa 2.0 V GE = 0V, V CE = V, T J = 25 C 2000 V GE = 0V, V CE = 600V, T J = 50 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 20 80 I C = 25A Q ge Gate - Emitter Charge (turn-on) 6 24 nc V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) 5 77 t d(on) Turn-On Delay Time 30 t r Rise Time 5 T J = 25 C ns t d(off) Turn-Off Delay Time 40 2 I C = 25A, V CC = 480V t f Fall Time 40 2, R G = Ω E on Turn-On Switching Loss 0.62 Energy losses include "tail" E off Turn-Off Switching Loss 0.33 mj See Fig. 9,,4 E ts Total Switching Loss 0.95.4 t sc Short Circuit Withstand Time µs V CC = 400V, T J = 25 C, R G = Ω, V CPK < 500V t d(on) Turn-On Delay Time 30 T J = 50 C, t r Rise Time 8 I C = 25A, V CC = 480V ns t d(off) Turn-Off Delay Time 90, R G = Ω t f Fall Time 50 Energy losses include "tail" E ts Total Switching Loss.9 mj See Fig.,4 L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 600 V GE = 0V C oes Output Capacitance 30 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 55 ƒ =.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V CC = 80%(V CES ), V GE = 20V, L = µh, R G = Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2 www.irf.com
Load Current (A) 60 40 20 Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 C T sink = 90 C Gate drive as specified Power Dissipation = 35W Triangular wave: Clamp voltage: 80% of rated Ideal diodes 0 A 0. 0 f, Frequency (khz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 0 0 I C, Collector-to-Emitter Current (A) o T J = 50 C T = 25 o J C 20µs PULSE WIDTH 0. V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T J = 50 C T J = 25 C V CC = 50V 5µs PULSE WIDTH 5 7 9 V GE, Gate-to-Emitter Voltage (V) A Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 50 40 30 20 V CE, Collector-to-Emitter Voltage(V) 5.0 4.0 3.0 2.0 80 us PULSE WIDTH I C = 50 A I C = 25 A I C = 2.5 A 0 25 50 75 0 25 50 T C, Case Temperature ( C).0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) 0. D = 0.50 0.20 0. 0.05 PDM t 0.02 t SINGLE PULSE 2 0.0 (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 0.0 2. Peak T J= PDM x Z thjc + TC 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 3000 2500 2000 500 00 VGE = 0V, f = MHz Cies = Cge + Cgc, C ce SHORTED Cres = Cgc Coes = Cce + Cgc C ies 500 C oes C res 0 0 V CE, Collector-to-Emitter Voltage (V) V GE, Gate-to-Emitter Voltage (V) 20 6 2 8 4 V CC = 400V I C = 25A 0 0 20 40 60 80 0 20 40 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj).80.60.40.20.00 V CC = 480V T = 25 J C I C = 25A Total Switching Losses (mj) R G = Ohm Ω V CC = 480V I C = 50A I C = 25A I C = 2.5A 0.80 0 20 30 40 50 R G, Gate Resistance (Ohm) Ω 0. -60-40 -20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switching Losses (mj) 5.0 4.0 3.0 2.0.0 R G = Ohm Ω T J = 50 C V CC = 480V 0.0 0 20 30 40 50 I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) 00 0 V GE = 20V o T J = 25 C SAFE OPERATING AREA 0 00 V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA 6 www.irf.com
50V c 00V L V * C D.U.T. d 0-480V 480µF 960V R L = 480V 4 X I C @25 C * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit I C 50V 00V c L Driver* d V C D.U.T. e Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V c d 90% e % V C 90% t d(off) Fig. 4b - Switching Loss Waveforms I 5% % C t d(on) tr E on E ts = (E on +E off ) www.irf.com 7 t f E off t=5µs
TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WIT H AS S E MBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE30 035H 56 57 PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 8 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/