D1H010DA1 10 W, 6 GHz, GaN HEMT Die D1H010DA1 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT). The D1H010DA1, operating at 48 V, offers high efficiency, great gain, easy of matching and broad bandwidth, making the die ideal for a variety of RF and microwave applications. FEATURES 12 W Nominal P SAT 83 % Maximum Drain Efficiency 48 V Operation High Breakdown Voltage Up to 6 GHz Operation Chip Dimensions: 880 x 920 x 100 um APPLICATIONS Cellular Infrastructure Class AB, Linear amplifiers suitable for OFDM, W-CDMA, LTE, EDGE, CDMA waveforms 1 / 7
Absolute Maximum Ratings (not simultaneous; Tc = 25 ) Parameter Symbol Rating Units Drain-Source Voltage VDSS 150 VDC Gate-Source Voltage VGS -10, +2 VDC Storage Temperature TSTG -65, +150 C Operating Junction Temperature TJ 225 C Thermal Resistance 1 Rθjc 21.8 C /W Maximum Forward Gate Current IGMAX 1.02 ma Mounting Temperature 2 TS 320 C Electrical Characteristics (Frequency = 2.6 GHz unless otherwise stated; Tc = 25 C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Pinch-Off Voltage VP -4.0-2.1-1.0 V VDS = 10 V, IDS = 1.02 ma Drain Current 3 ISAT - 1.02 - A VDS = 6 V, VGS = 2.0 V Drain-Source Breakdown VBR 150 - - V VGS = -10 V, ID = 1.02 ma Voltage On Resistance RON - 2.94 - Ω VDS = 0.1 V Gate Forward Voltage VG-ON - 3 - V IGS = 1.02 ma RF Characteristics (Typical) 4 Maximum Power Tuning Gain (db) PSAT (dbm) PSAT (W) DE (%) 24.5 41.0 12 74 Maximum Drain Efficiency Tuning Gain (db) PSAT (dbm) PSAT (W) DE (%) 25.4 39.9 10 83 Notes: 1 Assumes eutectic attach using 1.0 mil thick 80/20 AuSn mounted to a 10 mm 10 mm 40 mil CPC141 Carrier Plate. PDISS = 4 W and Case Temperature = 85 C. 2 Maximum temperature during die attach is 320 C for 30 seconds. 3 Scaled from PCM data. 4 Tested in Load Pull System, Frequency = 2600 MHz, Pulsed Width = 100 μs, Duty Cycle = 10 %. 2 / 7
DIE Dimensions (units in Millimeter) 1 2 3 Overall die size 880 x 920 (+0 / -50) microns, die thickness 100 microns. All Gate and Drain pads must be wire bonded for electrical connection. Pad No. Description 2 Gate Pad 3 Drain Pad 1 Source / Ground Die Backside Source / Ground Assembly Notes: Recommended solder is AuSn (80 / 20) solder. Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. 3 / 7
Gmax (db) Gain (db) DE (%) K Factor PRELIMINARY Typical Performance Figure 1. D1H010DA1, Gain and Efficiency vs. Output Power V DD = 48 V, I DQ = 30 ma, Frequency = 2.6 GHz, Maximum Power Tuned and Maximum Efficiency Tuned in Load Pull System 28 90 26 24 Gain Maximum Efficiency Tuned DE 80 70 22 20 18 16 Maximum Power Tuned Maximum Efficiency Tuned Maximum Power Tuned 60 50 40 30 14 30 32 34 36 38 40 20 42 Pout (dbm) Figure 2. D1H010DA1 Gmax and K Factor vs. Frequency V DD = 48 V, I DQ = 30 ma 32 0.7 30 28 Gmax K Factor 0.6 0.5 26 24 22 20 0.4 0.3 0.2 0.1 18 0.0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 Freq (MHz) 4 / 7
Typical Die S-Parameters (Small Signal, VDD = 48 V, IDQ = 30 ma, magnitude / angle) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 0.5 GHz 0.981-41.224 15.124 153.162 0.011 65.506 0.825-15.380 0.6 GHz 0.974-48.563 14.662 148.343 0.013 61.161 0.815-18.100 0.7 GHz 0.967-55.493 14.165 143.767 0.015 57.061 0.803-20.670 0.8 GHz 0.960-62.002 13.650 139.438 0.016 53.212 0.792-23.094 0.9 GHz 0.953-68.087 13.126 135.355 0.018 49.611 0.781-25.379 1.0 GHz 0.946-73.758 12.605 131.509 0.019 46.251 0.770-27.536 1.1 GHz 0.940-79.032 12.094 127.889 0.020 43.122 0.760-29.578 1.2 GHz 0.934-83.928 11.597 124.479 0.021 40.208 0.750-31.518 1.3 GHz 0.929-88.470 11.118 121.266 0.021 37.497 0.742-33.368 1.4 GHz 0.924-92.682 10.660 118.235 0.022 34.972 0.734-35.141 1.5 GHz 0.919-96.589 10.224 115.369 0.022 32.619 0.727-36.847 1.6 GHz 0.915-100.215 9.810 112.655 0.023 30.426 0.721-38.495 1.7 GHz 0.912-103.584 9.417 110.079 0.023 28.378 0.715-40.094 1.8 GHz 0.909-106.716 9.046 107.630 0.023 26.465 0.711-41.651 1.9 GHz 0.906-109.632 8.695 105.296 0.024 24.675 0.707-43.170 2.0 GHz 0.903-112.350 8.364 103.066 0.024 23.000 0.703-44.658 2.1 GHz 0.901-114.887 8.051 100.933 0.024 21.431 0.701-46.118 2.2 GHz 0.899-117.259 7.755 98.887 0.024 19.959 0.698-47.553 2.3 GHz 0.898-119.480 7.476 96.920 0.024 18.579 0.696-48.965 2.4 GHz 0.896-121.563 7.212 95.027 0.024 17.285 0.695-50.358 2.5 GHz 0.895-123.519 6.962 93.202 0.024 16.071 0.694-51.732 2.6 GHz 0.894-125.359 6.726 91.438 0.024 14.932 0.693-53.089 2.7 GHz 0.893-127.092 6.502 89.731 0.024 13.866 0.693-54.429 2.8 GHz 0.893-128.728 6.290 88.077 0.023 12.867 0.693-55.755 2.9 GHz 0.892-130.273 6.088 86.472 0.023 11.935 0.693-57.065 3.0 GHz 0.892-131.735 5.897 84.912 0.023 11.065 0.694-58.362 3.1 GHz 0.891-133.121 5.715 83.394 0.023 10.257 0.695-59.644 3.2 GHz 0.891-134.435 5.542 81.916 0.023 9.507 0.696-60.913 3.3 GHz 0.891-135.685 5.377 80.474 0.022 8.816 0.697-62.169 3.4 GHz 0.891-136.874 5.219 79.067 0.022 8.182 0.698-63.411 3.5 GHz 0.891-138.006 5.069 77.692 0.022 7.604 0.700-64.640 3.6 GHz 0.891-139.087 4.926 76.348 0.021 7.082 0.701-65.856 5 / 7
3.7 GHz 0.891-140.119 4.789 75.032 0.021 6.616 0.703-67.059 3.8 GHz 0.891-141.106 4.658 73.743 0.021 6.205 0.705-68.248 3.9 GHz 0.892-142.051 4.532 72.480 0.021 5.851 0.707-69.425 4.0 GHz 0.892-142.957 4.412 71.241 0.020 5.553 0.709-70.588 4.1 GHz 0.892-143.826 4.296 70.026 0.020 5.314 0.711-71.739 4.2 GHz 0.893-144.661 4.185 68.832 0.019 5.133 0.714-72.876 4.3 GHz 0.893-145.464 4.079 67.659 0.019 5.011 0.716-74.001 4.4 GHz 0.894-146.237 3.977 66.506 0.019 4.952 0.718-75.113 4.5 GHz 0.894-146.982 3.879 65.373 0.018 4.955 0.721-76.211 4.6 GHz 0.895-147.701 3.784 64.257 0.018 5.024 0.723-77.297 4.7 GHz 0.895-148.394 3.693 63.160 0.018 5.160 0.726-78.370 4.8 GHz 0.896-149.064 3.605 62.079 0.017 5.365 0.728-79.430 4.9 GHz 0.897-149.713 3.521 61.015 0.017 5.643 0.731-80.477 5.0 GHz 0.897-150.340 3.439 59.966 0.017 5.995 0.733-81.512 5.1 GHz 0.898-150.948 3.360 58.933 0.016 6.425 0.736-82.534 5.2 GHz 0.898-151.538 3.284 57.914 0.016 6.936 0.738-83.544 5.3 GHz 0.899-152.110 3.211 56.910 0.016 7.530 0.741-84.541 5.4 GHz 0.900-152.665 3.140 55.919 0.015 8.211 0.744-85.526 5.5 GHz 0.900-153.205 3.071 54.942 0.015 8.982 0.746-86.498 5.6 GHz 0.901-153.730 3.005 53.978 0.015 9.846 0.749-87.458 5.7 GHz 0.902-154.240 2.941 53.026 0.014 10.805 0.751-88.407 5.8 GHz 0.902-154.738 2.878 52.087 0.014 11.863 0.754-89.343 5.9 GHz 0.903-155.222 2.818 51.159 0.014 13.021 0.757-90.267 6.0 GHz 0.904-155.695 2.760 50.243 0.013 14.281 0.759-91.180 6 / 7
Contact Information For sales or technical support: Home Page: www.dynax-semi.com Tel: +86-512-36886888 Email: sales@dynax-semi.com Zip Code: 215300 Company Address: No.18 Chenfeng Road, Kunshan, Jiangsu Province, China 7 / 7