1000V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp starter and ballast. Features 1.6A, 1000V, R DS(on) = 9Ω @ = 10 V Low gate charge ( typical 12 nc) Low Crss ( typical 5 pf) Fast switching 100% avalanche tested Improved dv/dt capability February 2002 D D! G S D-PAK FQD Series G D S I-PAK FQU Series G!! S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Units S Drain-Source Voltage 1000 V I D Drain Current - Continuous (T C = 25 C) 1.6 A - Continuous (T C = 100 C) 1.0 A I DM Drain Current - Pulsed (Note 1) 6.4 A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 160 mj I AR Avalanche Current (Note 1) 1.6 A E AR Repetitive Avalanche Energy (Note 1) 5.0 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P D Power Dissipation (T A = 25 C) * 2.5 W Power Dissipation (T C = 25 C) 50 W - Derate above 25 C 0.4 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C Thermal Characteristics Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction-to-Case -- 2.5 C/W R θja Thermal Resistance, Junction-to-Ambient * -- 50 C/W R θja Thermal Resistance, Junction-to-Ambient -- 110 C/W * When mounted on the minimum pad size recommended (PCB Mount)
Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 µa 1000 -- -- V BS Breakdown Voltage Temperature / T J Coefficient I D = 250 µa, Referenced to 25 C -- 0.976 -- V/ C I DSS = 1000 V, = 0 V -- -- 10 µa Zero Gate Voltage Drain Current = 800 V, T C = 125 C -- -- 100 µa I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, I D = 250 µa 3.0 -- 5.0 V R DS(on) Static Drain-Source On-Resistance = 10 V, I D = 0.8 A -- 7.1 9 Ω g FS Forward Transconductance = 50 V, I D = 0.8 A (Note 4) -- 1.9 -- S Dynamic Characteristics C iss Input Capacitance -- 400 520 pf = 25 V, = 0 V, C oss Output Capacitance -- 40 52 pf f = 1.0 MHz C rss Reverse Transfer Capacitance -- 5 6.5 pf Switching Characteristics t d(on) Turn-On Delay Time = 500 V, I D = 2.0 A, -- 13 35 ns t r Turn-On Rise Time R G = 25 Ω -- 30 70 ns t d(off) Turn-Off Delay Time -- 25 60 ns t f Turn-Off Fall Time (Note 4, 5) -- 35 80 ns Q g Total Gate Charge -- 12 15.5 nc = 800 V, I D = 2.0 A, Q gs Gate-Source Charge -- 2.5 -- nc = 10 V Q (Note 4, 5) gd Gate-Drain Charge -- 6.5 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 1.5 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 6.0 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 1.6 A -- -- 1.4 V t rr Reverse Recovery Time = 0 V, I S = 2.0 A, -- 520 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) -- 2.3 -- µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 120mH, I AS = 1.6A, = 50V, R G = 25 Ω, Starting T J = 25 C 3. I SD 2.0A, di/dt 300A/µs, BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
Typical Characteristics I D, Drain Current [A] Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V I D, Drain Current [A] 150 25-55 10-2 10 1, Drain-Source Voltage [V] 1. 250µs Pulse Test 2. T C = 25 1. = 50V 2. 250µs Pulse Test 2 4 6 8 10, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 20 R DS(on), [ Ω] Drain-Source On-Resistance 15 10 5 = 10V = 20V Note : T J = 25 I DR, Reverse Drain Current [A] 150 25 1. = 0V 2. 250µs Pulse Test 0 0 1 2 3 4 I D, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V SD, Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 700 600 C iss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 12 10 = 200V = 500V Capacitance [pf] 500 400 300 200 100 C oss C rss 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 8 6 4 2 = 1000V Note : I D = 1.6 A 0 10 1, Drain-Source Voltage [V] 0 0 2 4 6 8 10 12 14 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 1. = 0 V 2. I D = 250µA R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 1. = 10 V 2. I D = 0.8 A 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs. Temperature 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 8. On-Resistance Variation vs. Temperature 10 1 Operation in This Area is Limited by R DS(on) 1.8 1.5 I D, Drain Current [A] 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 10 µs 100 µs 10-2 10 1 10 2 10 3, Drain-Source Voltage [V] DC 10 ms 1 ms I D, Drain Current [A] 1.2 0.9 0.6 0.3 0.0 25 50 75 100 125 150 T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θ JC (t), Thermal Response D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse N otes : 1. Z θ JC (t) = 2.5 /W M ax. 2. D uty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-2 10-5 10-4 10-3 10-2 10 1 t 1, S quare W ave P ulse D uration [sec] Figure 11. Transient Thermal Response Curve
12V 200nF 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT 10V Q gs Q g Q gd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms R L 90% R G 10V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI 2 2 AS BS -------------------- BS - I D BS I AS R G I D (t) 10V DUT (t) t p t p Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + _ I SD L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop
Package Dimension 6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50) D-PAK 0.70 ±0.20 2.30 ±0.10 0.50 ±0.10 0.60 ±0.20 0.80 ±0.20 MAX0.96 2.30TYP [2.30±0.20] 2.70 ±0.20 9.50 ±0.30 6.10 ±0.20 0.76 ±0.10 2.30TYP [2.30±0.20] 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 0.89 ±0..91 ±0.10 6.60 ±0.20 (5.34) (5.04) (1.50) (2XR0.25) (0.70) MIN0.55 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 (0.10) (3.05) (0.90) (1.00) 0.76 ±0.10 Dimensions in Millimeters
Package Dimension (Continued) 6.60 ±0.20 5.34 ±0.20 (0.50) (4.34) (0.50) I-PAK 2.30 ±0.20 0.50 ±0.10 0.60 ±0.20 0.80 ±0.10 0.70 ±0.20 6.10 ±0.20 MAX0.96 0.76 ±0.10 1.80 ±0.20 9.30 ±0.30 16.10 ±0.30 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters
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