FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features 650V @T J = 150 C Typ. R DS(on) = 0.32Ω Fast Recovery Type ( t rr = 120ns) Ultra Low Gate Charge (typ. Q g = 40nC) Low Effective Output Capacitance (typ. C oss eff.=95pf) 100% avalanche tested RoHS Compliant G D S TO-220 G D S Description SuperFET TM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. TO-220F December 2008 SuperFET TM G D! "! " "! "! S Absolute Maximum Ratings Symbol Parameter FCP11N60F FCPF11N60F Units Drain Current - Continuous (T C = 25 C) 11 11 * A - Continuous (T C = 100 C) 7 7 * A M Drain Current - Pulsed (Note 1) 33 33 * A S Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 340 mj I AR Avalanche Current (Note 1) 11 A E AR Repetitive Avalanche Energy (Note 1) 12.5 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) 125 36 * W - Derate above 25 C 1.0 0.29 * W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 300 C 1/8" from case for 5 seconds * Drain current limited by maximum junction termperature. Thermal Characteristics Symbol Parameter FCP11N60F FCPF11N60F Units R θjc Thermal Resistance, Junction-to-Case 1.0 3.5 C/W R θcs Thermal Resistance, Case-to-Sink 0.5 -- C/W R θja Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCP11N60F FCP11N60F TO-220 -- -- 50 FCPF11N60F FCPF11N60F TO-220F -- -- 50 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 µa, T J = 25 C 600 -- -- V = 0 V, = 250 µa, T J = 150 C -- 650 -- V BS / Breakdown Voltage Temperature = 250 µa, Referenced to 25 C -- 0.6 -- V/ C T J Coefficient B Drain-Source Avalanche Breakdown = 0 V, = 11 A -- 700 -- V Voltage SS Zero Gate Voltage Drain Current = 600 V, = 0 V -- -- 10 µa = 480 V, T C = 125 C -- -- 100 µa I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, = 250 µa 3.0 -- 5.0 V R DS(on) Static Drain-Source = 10 V, = 5.5 A -- 0.32 0.38 Ω On-Resistance g FS Forward Transconductance = 40 V, = 5.5 A (Note 4) -- 9.7 -- S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, -- 1148 1490 pf C oss Output Capacitance f = 1.0 MHz -- 671 870 pf C rss Reverse Transfer Capacitance -- 63 82 pf C oss Output Capacitance = 480 V, = 0 V, -- 35 -- pf f = 1.0 MHz C oss eff. Effective Output Capacitance = 0V to 480 V, = 0 V -- 95 -- pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 300 V, = 11 A, -- 34 80 ns t r Turn-On Rise Time R G = 25 Ω -- 98 205 ns t d(off) Turn-Off Delay Time -- 119 250 ns t f Turn-Off Fall Time (Note 4, 5) -- 56 120 ns Q g Total Gate Charge = 480 V, = 11 A, -- 40 52 nc Q gs Gate-Source Charge = 10 V -- 7.2 -- nc (Note 4, 5) Q gd Gate-Drain Charge -- 21 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 33 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 11 A -- -- 1.4 V t rr Reverse Recovery Time = 0 V, I S = 11 A, -- 120 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) -- 0.8 -- µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS = 5.5A, V DD = 50V, R G = 25 Ω, Starting T J = 25 C 3. I SD 11A, di/dt 200A/µs, V DD BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature 2 www.fairchildsemi.com
Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 10 1 6.0 V Bottom : 5.5 V 10 1, Drain-Source Voltage [V] 1. 250 µs Pulse Test 2. T C = 25 o C Figure 2. Transfer Characteristics 2 4 6 8 10, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperatue 1.0 10 1 150 o C 25 o C -55 o C * Note 1. = 40V 2. 250 µs Pulse Test R DS(ON) [Ω], Drain-Source On-Resistance 0.8 0.6 0.4 0.2 = 10V = 20V * Note : T J = 25 o C 0.0 0 5 10 15 20 25 30 35 40 R, Reverse Drain Current [A] 10 1 150 o C 25 o C 1. = 0V 2. 250 µs Pulse Test 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V SD, Source-Drain Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Capacitance [pf] 6000 5000 4000 3000 2000 1000 C rss C iss C oss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 12 10 8 6 4 2 = 100V = 250V = 400V * Note : = 11A 0 10 1, Drain-Source Voltage [V] 0 0 5 10 15 20 25 30 35 40 45 Q G, Total Gate Charge [nc] 3 www.fairchildsemi.com
Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 9-1. Safe Operating Area for FCP11N60F 1. = 0 V 2. = 250 µa R DS(ON), (Normalized) Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 9-2. Safe Operating Area for FCPF11N60F 1. = 10 V 2. = 5.5 A 10 2 Operation in This Area is Limited by R DS(on) 10 2 Operation in This Area is Limited by R DS(on) 10 1 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 100 us 1 ms 10 ms DC 10 1 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 100 us 1 ms 10 ms 100 ms DC 10-2 10 1 10 2 10 3, Drain-Source Voltage [V] 10-2 10 1 10 2 10 3, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 12.5 10.0 7.5 5.0 2.5 0.0 25 50 75 100 125 150 T C, Case Temperature [ o C] 4 www.fairchildsemi.com
Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FCP11N60F Z θjc (t), Thermal Response 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 1. Z θ JC (t) = 1.0 o C/W Max. 2. Duty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) 10-5 10-4 10-3 10-2 10 1 t 1, Square W ave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FCPF11N60F P DM t 1 t 2 D=0.5 Z θjc (t), Thermal Response 0.2 0.1 0.05 0.02 0.01 single pulse 1. Z θ JC (t) = 3.5 o C/W Max. 2. D uty F actor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM 10-2 t 1 t 2 10-5 10-4 10-3 10-2 10 1 t 1, Square W ave Pulse Duration [sec] 5 www.fairchildsemi.com
12V 200nF 3mA 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT 10V Q gs DUT Resistive Switching Test Circuit & Waveforms Q g Q gd Charge R L 90% R G V DD 10V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI 2 2 AS BS -------------------- BS -V DD BS I AS R G V DD (t) 10V DUT V DD (t) t p t p Time 6 www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I SD _ L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 7 www.fairchildsemi.com
Mechanical Dimensions TO - 220 Dimensions in Millimeters 8 www.fairchildsemi.com
Mechanical Dimensions (Continued) 15.80 ±0.20 3.30 ±0.10 TO-220F 10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (7.00) (0.70) 6.68 ±0.20 (1.00x45 ) 15.87 ±0.20 9.75 ±0.30 MAX1.47 0.80 ±0.10 (30 ) 0.35 ±0.10 #1 0.50 +0.10 0.05 2.76 ±0.20 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 Dimensions in Millimeters 9 www.fairchildsemi.com
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