FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: V, A, 24mΩ P-Channel: -V, -A, 54mΩ Features : N-Channel Max r DS(on) = 24mΩ at V GS = V, I D = 9.A Max r DS(on) = mω at V GS = 4.5V, I D = 7.A : P-Channel Max r DS(on) = 54mΩ at V GS = -V, I D = -6.5A Max r DS(on) = 7mΩ at V GS = -4.5V, I D = -5.6A Fast switching speed RoHS Compliant D/D2 General Description February 4 These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench- process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application Inverter H-Bridge D D2 G2 S2 G S G S G2 S2 Dual DPAK 4L N-Channel P-Channel MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Units V DS Drain to Source Voltage - V V GS Gate to Source Voltage ± ± V I D Thermal Characteristics Drain Current - Continuous (Package Limited) - - Continuous (Silicon Limited) T C = 25 C 26 - - Continuous T A = 25 C 9. -6.5 - Pulsed 55 - Power Dissipation for Single Operation T C = 25 C (Note ) 35 P D T A = 25 C (Note a) 3. W T A = 25 C (Note b).3 E AS Single Pulse Avalanche Energy (Note 3) 29 33 mj T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C A R θjc Thermal Resistance, Junction to Case, Single Operation for (Note ) 4. R θjc Thermal Resistance, Junction to Case, Single Operation for (Note ) 3.5 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8424H FDD8424H TO-252-4L 3 2mm 25 units 3 Fairchild Semiconductor Corporation
Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BV DSS ΔBV DSS ΔT J I DSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current I D = 25μA, V GS = V I D = -25μA, V GS = V I D = 25μA, referenced to 25 C I D = -25μA, referenced to 25 C V DS = 32V, V GS = V V DS = -32V, V GS = V I GSS Gate to Source Leakage Current V GS = ±V, V DS = V On Characteristics V GS(th) ΔV GS(th) ΔT J r DS(on) g FS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance Dynamic Characteristics V GS = V DS, I D = 25μA V GS = V DS, I D = -25μA I D = 25μA, referenced to 25 C I D = -25μA, referenced to 25 C V GS = V, I D = 9.A V GS = 4.5V, I D = 7.A V GS = V, I D = 9.A, T J = 25 C V GS = -V, I D = -6.5A V GS = -4.5V, I D = -5.6A V GS = -V, I D = -6.5A, T J = 25 C V DS = 5V, I D = 9.A V DS = -5V, I D = -6.5A C iss Input Capacitance V DS = V, V GS = V, f = MHZ C oss C rss Output Capacitance Reverse Transfer Capacitance R g Gate Resistance f = MHz V DS = -V, V GS = V, f = MHZ - -.. 34-32.7 -.6-5.3 4.8 9 23 29 42 58 62 29 3 75 5 75 75. 3.3 - ± ± 3-3 24 37 54 7 8 3 55 85 5 5 3.3 9.9 V mv/ C μa na na V mv/ C mω S pf pf pf Ω Switching Characteristics t d(on) Turn-On Delay Time V DD = V, I D = 9.A, t r Rise Time V GS = V, R GEN = 6Ω t d(off) t f Turn-Off Delay Time Fall Time V DD = -V, I D = -6.5A, V GS = -V, R GEN = 6Ω Q g(tot) Q gs Total Gate Charge Gate to Source Charge V GS = V, V DD = V, I D = 9.A Q gd Gate to Drain Miller Charge V GS = -V, V DD = -V, I D = -6.5A 7 7 3 3 7 6 3 4 7 2.3 3. 3.2 3.6 4 4 24 3 36 2 24 ns ns ns ns nc nc nc 3 Fairchild Semiconductor Corporation 2
Electrical Characteristics T J = 25 C unless otherwise noted Drain-Source Diode Characteristics I S Notes: Symbol Parameter Test Conditions Type Min Typ Max Units. R θja is determined with the device mounted on a in 2 pad 2 oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. Maximum Continuous Drain to Source Diode Forward Current I SM Maximum Pulsed Drain to Source Diode Forward Current (Note 2) V SD t rr Q rr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge V GS = V, I S = 9.A (Note 2) V GS = V, I S = -6.5A (Note 2) I F = 9.A, di/dt = A/s I F = -6.5A, di/dt = A/s a. C/W when mounted on a in 2 pad of 2 oz copper Scale : on letter size paper.87.88 25 29 9 29-55 -.2 -.2 38 44 29 44 b. 96 C/W when mounted on a minimum pad of 2 oz copper A A V ns nc a. C/W when mounted on a in 2 pad of 2 oz copper b. 96 C/W when mounted on a minimum pad of 2 oz copper Scale : on letter size paper 2. Pulse Test: Pulse Width < μs, Duty cycle < 2.%. 3. Starting T J = 25 C, N-ch: L =.3mH, I AS = 4A, V DD = V, V GS = V; P-ch: L =.3mH, I AS = -5A, V DD = -V, V GS = -V. 3 Fairchild Semiconductor Corporation 3
Typical Characteristics ( N-Channel)T J = 25 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 5 V GS = V 2 3 4 V DS, DRAIN TO SOURCE VOLTAGE (V).8.6.4.2..8 Figure. I D = 9A V GS = V V GS = 4.V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = 4.5V V GS = 3.5V V GS = 3.V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.5 5 6 I D, DRAIN CURRENT(A) On- Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage.6-75 -5-25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) 3. 2.5 2..5. 5 V GS = 3.V V GS = 3.5V I D = 9A PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = 4.5V V GS = 4.V V GS = V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX 2 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On -Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) 6 5 PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V DS = 5V T J = 5 o C T J = -55 o C.5 2. 2.5 3. 3.5 4. 4.5 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics IS, REVERSE DRAIN CURRENT (A) 6.. V GS = V T J = 5 o C T J = -55 o C...3.6.9.2.5 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 Fairchild Semiconductor Corporation 4
Typical Characteristics ( N-Channel)T J = 25 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) 8 6 4 2 I D = 9A 4 8 2 6 Q g, GATE CHARGE(nC) Figure 7. V DD = 5V V DD = 25V V DD = V. V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage... t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) I D, DRAIN CURRENT (A) 25 5 f = MHz V GS = V Limited by Package C iss C oss C rss V GS = V V GS = 4.5V 5 R θjc = 4. o C/W 25 5 75 25 5 T C, CASE TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature ID, DRAIN CURRENT (A) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE T J = MAX RATED R θjc = 4. o C/W T C = 25 o C. V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area us us ms ms DC 8 ), PEAK TRANSIENT POWER (W) P(PK V GS = V FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: 5 T C I = I 25 ----------------------- 25 T C = 25 o C SINGLE PULSE R θjc = 4. o C/W -5-4 -3-2 - t, PULSE WIDTH (s) Figure 2. Single Pulse Maximum Power Dissipation 3 Fairchild Semiconductor Corporation 5
Typical Characteristics ( N-Channel)T J = 25 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc 2. DUTY CYCLE-DESCENDING ORDER D =.5.2..5.2. t t 2 NOTES:. SINGLE PULSE DUTY FACTOR: D = t /t 2 R θjc = 4. o C/W PEAK T J = P DM x Z θjc x R θjc + T C.5-5 -4-3 -2 - t, RECTANGULAR PULSE DURATION (s) Figure 3. Transient Thermal Response Curve P DM 3 Fairchild Semiconductor Corporation 6
Typical Characteristics ( P-Channel) -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = -V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = -4.5V V GS = -4V V GS = -3.5V V GS = -3V 2 3 4 -V DS, DRAIN TO SOURCE VOLTAGE (V).6.4.2..8 Figure 4. On- Region Characteristics I D = -6.5A V GS = -V.6-75 -5-25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( o C) T J = 25 C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rds(on), DRAIN TO 3. 2.5 2..5. V GS = -3V V GS = -3.5V PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V GS = -4V V GS = -V V GS = -4.5V.5 -I D, DRAIN CURRENT(A) Figure 5. Normalized on-resistance vs Drain Current and Gate Voltage SOURCE ON-RESISTANCE (mω) 6 8 I D = -6.5A PULSE DURATION = 8μs DUTY CYCLE =.5%MAX 2 4 6 8 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 6. Normalized On-Resistance vs Junction Temperature Figure 7. On-Resistance vs Gate to Source Voltage -I D, DRAIN CURRENT (A) PULSE DURATION = 8μs DUTY CYCLE =.5%MAX V DS = -5V T J = 5 o C T J = -55 o C 2 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) -IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 5 o C T J = -55 o C...3.6.9.2.5 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 8. Transfer Characteristics Figure 9. Source to Drain Diode Forward Voltage vs Source Current 3 Fairchild Semiconductor Corporation 7
Typical Characteristics ( P-Channel)T J = 25 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -IAS, AVALANCHE CURRENT(A) 8 6 4 2 I D = -6.5A V DD = -5V V DD = -25V V DD = -V 4 8 2 6 Q g, GATE CHARGE(nC) Figure. Gate Charge Characteristics... t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) -I D, DRAIN CURRENT (A) f = MHz V GS = V C iss C oss C rss. -V DS, DRAIN TO SOURCE VOLTAGE (V) 25 5 5 Figure 2. Capacitance vs Drain to Source Voltage R θjc = 3.5 o C/W V GS = -V V GS = -4.5V 25 5 75 25 5 T C, CASE TEMPERATURE ( o C) -ID, DRAIN CURRENT (A) Figure 22. Unclamped Inductive Switching Capability THIS AREA IS LIMITED BY r ds(on) SINGLE PULSE T J = MAX RATED R θjc = 3.5 o C/W DC T C = 25 o C. -V DS, DRAIN to SOURCE VOLTAGE (V) Figure 24. Forward Bias Safe Operating Area us us ms ms 8 ), PEAK TRANSIENT POWER (W) P(PK Figure 23. Maximum Continuous Drain Current vs Case Temperature V GS = -V SINGLE PULSE FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: 5 T C I = I 25 ----------------------- 25 R θjc = 3.5 o C/W -5-4 -3-2 - 2 3 t, PULSE WIDTH (s) Figure 25. Single Pulse Maximum Power Dissipation T C = 25 o C 3 Fairchild Semiconductor Corporation 8
Typical Characteristics ( P-Channel)T J = 25 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc 2. DUTY CYCLE-DESCENDING ORDER D =.5.2..5.2. t t 2 NOTES: DUTY FACTOR: D = t /t 2. SINGLE PULSE PEAK T J = P DM x Z θjc x R θjc + T C R θjc = 3.5 o C/W.5-5 -4-3 -2 - t, RECTANGULAR PULSE DURATION (s) Figure 26. Transient Thermal Response Curve P DM 3 Fairchild Semiconductor Corporation 9
Dimensional Outline and Pad Layout 3 Fairchild Semiconductor Corporation
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Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 3 Fairchild Semiconductor Corporation
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