FDAF69N25 250V N-Channel MOSFET Features 34A, 250V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 77 nc) Low Crss ( typical 84 pf) Fast switching Improved dv/dt capability Description September 2005 UniFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switched mode power supplies. D G G D S TO-3PF FQAF Series S Absolute Maximum Ratings Symbol Parameter FDAF69N25 Unit S Drain-Source Voltage 250 V (Avalanche) Repetitive Avalanche Voltage (Note 1) 300 V (Note 2) Drain Current - Continuous (T C = 25 C) - Continuous (T C = 100 C) M Drain Current - Pulsed (Note 1) 136 A S Gate-Source Voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 1894 mj I AR Avalanche Current (Note 1) 34 A E AR Repetitive Avalanche Energy (Note 1) 11.5 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) - Derate above 25 C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds Thermal Characteristics 34 21.5 115 0.93 A A W W/ C Symbol Parameter Min. Max. Unit R θjc Thermal Resistance, Junction-to-Case -- 1.08 C/W R θcs Thermal Resistance, Case-to-Sink 0.24 -- C/W R θja Thermal Resistance, Junction-to-Ambient -- 40 C/W 2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDAF69N25 FDAF69N25 TO-3PF -- -- 30 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0V, = 250µA 250 -- -- V BS Breakdown Voltage Temperature I / T J Coefficient D = 250µA, Referenced to 25 C -- 0.25 -- V/ C SS Zero Gate Voltage Drain Current = 250V, = 0V = 200V, T C = 125 C I GSSF Gate-Body Leakage Current, Forward = 30V, = 0V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -30V, = 0V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, = 250µA 3.0 -- 5.0 V R DS(on) Static Drain-Source On-Resistance = 10V, = 17A -- 0.034 0.041 Ω g FS Forward Transconductance = 40V, = 17A (Note 4) -- 25 -- S Dynamic Characteristics C iss Input Capacitance = 25V, = 0V, -- 3570 4640 pf C oss Output Capacitance f = 1.0MHz -- 750 980 pf -- -- -- -- 1 10 µa µa C rss Reverse Transfer Capacitance -- 84 130 pf Switching Characteristics t d(on) Turn-On Delay Time = 125V, = 69A -- 95 200 ns t r Turn-On Rise Time R G = 25Ω -- 855 1720 ns t d(off) Turn-Off Delay Time (Note 4, 5) -- 130 270 ns t f Turn-Off Fall Time -- 220 450 ns Q g Total Gate Charge = 200V, = 69A -- 77 100 nc Q gs Gate-Source Charge = 10V -- 24 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 37 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 34 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 136 A V SD Drain-Source Diode Forward Voltage = 0V, I S = 34A -- -- 1.4 V t rr Reverse Recovery Time = 0V, I S = 69A -- 210 -- ns Q rr Reverse Recovery Charge di F /dt =100A/µs (Note 4) -- 5.7 -- µc NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.64mH, I AS = 69A, = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 34A, di/dt 200A/µs, BS, Starting T J = 25 C 4. Pulse Test: Pulse width 300µs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 www.fairchildsemi.com
Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 10 1 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10-1 10 1, Drain-Source Voltage [V] 1. 250µs Pulse Test 2. T C = 25 C Figure 2. Transfer Characteristics 10 2 10 1 25 C 150 C -55 C 1. = 40V 2. 250µs Pulse Test 2 4 6 8 10 12, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.10 R DS(ON) [Ω], Drain-Source On-Resistance 0.08 = 10V 0.06 = 20V 0.04 * Note : T J = 25 C 0 25 50 75 100 125 150 175 200 R, Reverse Drain Current [A] 10 2 10 1 150 C 25 C 1. = 0V 2. 250µs Pulse Test 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V SD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 9000 C iss = C gs + C gd (C ds = shorted) 12 Capacitances [pf] 6000 3000 C oss C iss C rss C oss = C ds + C gd C rss = C gd 0 10-1 10 1, Drain-Source Voltage [V] * Note ; 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 10 8 6 4 = 50V = 125V = 200V 2 * Note : = 69A 0 0 10 20 30 40 50 60 70 80 Q G, Total Gate Charge [nc] 3 www.fairchildsemi.com
Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 1. = 0 V 2. = 250µA 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ C] Figure 8. On-Resistance Variation vs. Temperature R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 1. = 10 V 2. = 17 A 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 40 10 2 10 µs 10 1 10-1 Operation in This Area is Limited by R DS(on) 1 ms 10 ms 100 ms DC Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 100 µs 10 1 10 2, Drain-Source Voltage [V] 30 20 10 0 25 50 75 100 125 150 T C, Case Temperature [ ] Figure 11. Transient Thermal Response Curve Z θ JC (t), Thermal Response 10-1 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse P DM t 1 t 2 N otes : 1. Z θ JC (t) = 1.08 /W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) 10-5 10-4 10-3 10-2 10-1 10 1 t 1, Square W ave Pulse Duration [sec] 4 www.fairchildsemi.com
12V 200nF 3mA 50K 300nF Gate Charge Test Circuit & Waveform Same Type as DUT DUT 10V Q gs Q g Q gd Charge Resistive Switching Test Circuit & Waveforms R L 90% R G 10V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- 1 LI 2 2 AS BS -------------------- BS - BS I AS R G (t) 10V DUT (t) t p t p Time 5 www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I SD _ L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop 6 www.fairchildsemi.com
Mechanical Dimensions 4.50 ±0.20 TO-3PF 15.50 ±0.20 ø3.60 ±0.20 10.00 ±0.20 10 5.50 ±0.20 3.00 ±0.20 (1.50) 26.50 ±0.20 16.50 ±0.20 14.50 ±0.20 2.50 ±0.20 16.50 ±0.20 0.85 ±0.03 1.50 ±0.20 23.00 ±0.20 2 14.80 ±0.20 4.00 ±0.20 0.75 +0.20 0.10 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.90 +0.20 0.10 3.30 ±0.20 5.50 ±0.20 Dimensions in Millimeters 7 www.fairchildsemi.com
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet Series FAST FASTr FPS FRFET GlobalOptoisolator GTO HiSeC I 2 C i-lo ImpliedDisconnect IntelliMAX Across the board. Around the world. The Power Franchise Programmable Active Droop ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET VCX Wire DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 8 www.fairchildsemi.com