FDS898 N-Channel PowerTrench MOSFET V, 7A, 3mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. SO-8 D DD D DD D Pin SO-8 G G S S GS S S Features Max r DS(on) = 3mΩ, = V, = 7A Max r DS(on) = mω, =.V, = 6A Low gate charge % R G tested RoHS Compliant 6 7 8 Q Q 3 MOSFET Maximum Ratings T A = C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage V Gate to Source Voltage ± V Drain Current Continuous (Note a) 7 A Pulsed A E AS Single Pulse Avalache Energy (Note ) 3 mj P D Power Dissipation for Single Operation.6 W Derate above C 3 mw/ C T J, T STG Operating and Storage Temperature - to C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 78 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS898 FDS898 SO-8 3mm mm units 7 Semiconductor Components Industries, LLC. October-7, Rev. Publication Order Number: FDS898/D
Electrical Characteristics T J = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage = µa, = V V BV DSS T J SS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current = µa, referenced to 3 mv/ C C V DS = V µa = V T J = C I GSS Gate to Source Leakage Current = ±V,V DS = V ± na On Characteristics (Note 3) (th) Gate to Source Threshold Voltage V DS =, = µa..7. V (th) T J r DS(on) Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance = µa, referenced to -.3 mv/ C C = V, = 7A 9 3 =.V, = 6A mω = V, = 7A, 6 3 T J = C Dynamic Characteristics C iss Input Capacitance 7 63 pf V DS = V, = V, C oss Output Capacitance 3 pf f =.MHz C rss Reverse Transfer Capacitance 6 pf R G Gate Resistance f = MHz.9.6 Ω Switching Characteristics (Note 3) t d(on) Turn-On Delay Time ns t r Rise Time V DD = V, = 7A 9 8 ns t d(off) Turn-Off Delay Time = V, R GS = 33Ω 68 ns t f Fall Time 3 ns Q g Total Gate Charge V DS = V, = V, = 7A 9. 3 nc Q g Total Gate Charge V DS = V, = V,. 7 nc Q gs Gate to Source Gate Charge = 7A. nc Q gd Gate to Drain Miller Charge. nc Drain-Source Diode Characteristics V SD Source to Drain Diode Voltage I SD = 7A.9. V I SD =.A.8. V t rr Diode Reverse Recovery Time I F = 7A, di/dt = A/µs 33 ns Q rr Diode Reverse Recovery Charge nc Notes: : R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user s board design. a) 78 C/W when mounted on a.in pad of oz copper b) C/W when mounted on a. in pad of oz copper c) 3 C/W when mounted on a minimun pad Scale : on letter size paper : Starting T J = C, L = mh, I AS = 8A, V DD = 7V, = V. 3: Pulse Test:Pulse Width <µs, Duty Cycle <%.
Typical Characteristics T J = C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE =V =.V =.V =.V PULSE DURATION =8µS DUTY CYCLE =.% MAX =3.V =3.V...... 3. 3.. V DS, DRAIN-SOURCE VOLTAGE (V) Figure. On Region Characteristics Figure..6....8 = 7A = V.6-8 - 8 6 T J, JUNCTION TEMPERATURE ( o C) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(on), DRAIN TO SOURCE ON-RESISTANCE (mohm) 3..... =3.V =3.V PULSE DURATION =8µS DUTY CYCLE =.% MAX =.V =.V =.V =V. 6 3 On-Resistance vs Drain Current and Gate Voltage = 7A T J = o C PULSE DURATION = 8µs DUTY CYCLE =.%MAX T J = o C 6 8, GATE TO SOURCE VOLTAGE (V) Figure 3. On Resistance vs Temperature Figure. On-Resistance vs Gate to Source Votlage PULSE DURATION =8µS DUTY CYCLE =.% MAX V DD = V 3, GATE TO SOURCE VOLTAGE (V) Figure. T J = O C T J = O C T J = - O C IS, REVERSE DRAIN CURRENT (A) Transfer Characteristics Figure 6... = V T J = o C T J = o C T J = - o C E-3....6.8... V SD, BODY DIODE FORWARD VOLTAGE (V) Source to Drain Diode Forward Voltage vs Source Current 3
Typical Characteristics T J = C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) I AS, AVALANCHE CURRENT (A) 8 6 V DD = V V DD = V V DD = V 6 8 Q g, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics STARTING T J = O C STARTING T J = O C.. t AV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability CAPACITANCE (pf) 7 6 f = MHz = V C RSS C OSS C ISS. V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 8 7 6 3 =.V =V 7 T A, AMBIENT TEMPERATURE ( o C) Figure. Maximum Continuous Drain Current vs Ambient Temperature ID. OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) SINGLE PULSE T J = MAX RATED us us ms ms ms s T A = o C.. V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area DC P (PK), PEAK TRANSIENT POWER (W) =V T A = o C FOR TEMPERATURES ABOVE o C DERATE PEAK CURRENT AS FOLLOWS: T I = I A ----------------------- SINGLE PULSE - - -3 - - 3 t, PULSE WIDTH (s) Figure. Single Pulse Maximum Power Dissipation
Typical Characteristics T J = C unless otherwise noted Normalized Thermal Impedance ZθJA. E-3 DUTY CYCLE - DESCENDING ORDER. D =...... SINGLE PULSE E- - - -3 - - 3 t, RECTANGULAR PULSE DURATION(s) Figure 3. Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A
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