SiC Power Module BSMDPC Datasheet Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 9 (N.C) 3, Features ) Low surge, low switching loss. ) High-speed switching possible. 7(N.C) *Do not connnect to NC pin. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOS from ROHM. Dimensions & Pin layout (Unit : mm) 7 9 3 (M. FOR SELF-TAPPING SCREW) 3 ROHM Co., Ltd. All rights reserved. / 3. - Rev.B
BSMDPC Absolute maximum ratings (Tj = C) Parameter Symbol Conditions Limit Unit Drain-source voltage V DSS G-S short V Gate-source voltage(+) V V GSS D-S short Gate-source voltage(-) - V Drain current * I D DC(Tc= C) A I DRM Pulse (Tc= C) ms * 3 A I S Tc= C A Source current * **3 3 A I Pulse (Tc= C) ms V GS=V SRM Pulse (Tc= C) ms V GS =V 3 A Total power disspation * Ptot Tc= C 3 W Junction temperature Tj - to C Storage temperature Tstg - to C Isolation voltage* Mounting torque Main Terminals : M screw (*) Measurement of Tc is to be done at the point just under the chip. N m N m (*) Repetition rate should be kept within the range where temperature rise of die should not exceed Tj max. (*) Tj is less than C (*) Actual measurement is 3Vrms/sec. in accordance with UL7. Electrical characteristics (Tj= C) Gate-source leakage current Switching characteristics Input capacitance Symbol Conditions Min. Typ. Max. Unit V DS(on) I C =A, V GS =V Tj= C -.3 3. V Tj= C - 3.3. V I DSS V DS =V, V GS =V - - ma V SD V GS =V, I S =A Tj= C -. - Tj= C -. - V GS =V, I S =A Tj= C -.3 - Tj= C - 3.3 - V V GS(th) V DS =V, I D =3.mA..7. V I GSS V GS =V, V DS =V - -. ma V GS = -V, V DS =V -. - - ma td(on) V GS(on) =V, - - ns tr - 9 - ns trr I D =A - - ns td(off) R G =.W - 3 - ns tr inductive load - 9 - ns Ciss V DS =V, V GS =V, f=mhz - 3 - nf Internal gate resistor R Gint Tj= C -. - W Junction-to-case thermal resistance Case-to-heat sink Thermal resistance Visol - Rth(c-f) Terminals to baseplate, f=hz AC min. Mounting to heat shink : M screw (*3) Duration of current conduction at gate-off state should not exceed msec. Parameter Static drain-source on-state voltage Drain cutoff current Source-drain voltage Gate-source threshold voltage Rth(j-c) DMOS (/ module) * Case to heat sink, per module, Thermal grease appied * 7 (*) Measurement of Tc is to be done at the point just beneath the chip. -.3 - (*7) Typical value is measured by using thermally conductive grease of l=.9w / (m K). -. 3. - Vrms. C/W C/W 3 ROHM Co., Ltd. All rights reserved. / 3. - Rev.B
BSMDPC Waveform for switching test E on = I D V DS E off = I D V DS trr Vsurge V DS 9% 9% I D % % % % % % % V GS % 9% td (on) tr td (off) 3 ROHM Co., Ltd. All rights reserved. 3/ 3. - Rev.B
BSMDPC Fig. Typical Output Characteristics Fig. Drain-Source Voltage vs. Drain Current 3 3 V GS =V V GS =V V GS =V V GS =V V GS =V V GS =V V GS =V V GS =V Drain-Source Voltage : V DS [V] 7 3 V GS =V 3 Drain-Source Voltage : V DS [V] Drain-Source Voltage : V DS [V] Fig.3 Drain-Source Voltage vs. Gate-Source Voltage 9 7 I D =A 3 I D =A I D =A I D =A Source Current : Is [A] Fig. Forward characteristic of Diode V GS =V V GS =V Gate-Source Voltage : V GS [V] Source-Drain Voltage : V SD [V] 3 ROHM Co., Ltd. All rights reserved. / 3. - Rev.B
BSMDPC Fig. Drain Current vs. Gate-Source Voltage Fig. Drain Current vs. Gate-Source Voltage.E+.E- V DS =V... V DS =V.E-.E-3.E-.E-........E- 3. 3 Gate-Source Voltage : V GS [V] Gate-Source Voltage : V GS [V] Fig.7 Switching Characteristics [ ] Fig. Switching Characteristics [ ] td(off) tr tr td(off) Switching Time : t [ns] td(on) V GS(on) =V R G =.W 3 Switching Time : t [ns] td(on) V GS(on) =V R G =.W 3 3 ROHM Co., Ltd. All rights reserved. / 3. - Rev.B
BSMDPC Fig.9 Switching Loss vs. Drain Current [ ] 3 Fig. Switching Loss vs. Drain Current [ ] 3 Switching Loss [mj] V GS(on) =V R G =.W E on E off Switching Loss [mj] V GS(on) =V R G =.W E on E off E rr 3 E rr 3 Fig. Recovery Characteristics vs. Drain Current [ ] Fig. Recovery Characteristics vs. Drain Current [ ] Recovery Time : trr [ns] V GS(on) =V R G =.W 3 Irr trr Recovery Current : Irr [A] Recovery Time : trr [ns] V GS(on) =V R G =.W 3 Irr trr Recovery Current : Irr [A] 3 ROHM Co., Ltd. All rights reserved. / 3. - Rev.B
BSMDPC Switching Time : t [ns] Fig.3 Switching Characteristics vs. Gate Resistance [ ] I D =A V GS(on) =V td(off) tr td(on) Switching Time : t [ns] Fig. Switching Characteristics vs. Gate Resistance [ ] I D =A V GS(on) =V td(off) td(on) tr Gate Resistance : R G [W] Gate Resistance : R G [W] Fig. Switching Loss vs. Gate Resistance [ ] Fig. Switching Loss vs. Gate Resistance [ ] Switching Loss [mj] E on E off Switching Loss [mj] I D =A V GS(on) =V E rr E on E rr E off I D =A V GS(on) =V Gate Resistance : R G [W] Gate Resistance : R G [W] 3 ROHM Co., Ltd. All rights reserved. 7/ 3. - Rev.B
BSMDPC Capasitance : C [nf] Fig.7 Typical Capacitance vs. Drain-Source Voltage.E-7.E-.E-9.E- V GS =V C rss C iss C oss Gate-Source Voltage : V GS [V] Fig. Gate Charge Characteristics [ ] I D =A.E-. Drain-Source Voltage : V DS [V] Total Gate charge : Qg [nc] Normalized Transient Thermal Impedance : Rth Fig.9 Normalized Transient Thermal Impedance Single Pulse Tc=ºC Per unit base :.ºC/W.... Time [s] Static Drain - Source On-State Resistance : R DS(on) [W] Fig. Static Drain - Source On-State Resistance vs. Junction Temperature...3.. V GS =V V GS =V I D =A Pulsed V GS =V V GS =V V GS =V 7 7 Junction Temperature : Tj [ºC] 3 ROHM Co., Ltd. All rights reserved. / 3. - Rev.B
Notice Notes ) ) 3) ) ) ) 7) ) 9) ) ) ) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 3) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/ 3 ROHM Co., Ltd. All rights reserved. RB