N-Channel 2 V (D-S) 75 C MOSFET SUP942E TO-22AB S D Top View G PRODUCT SUMMARY V DS (V) 2 R DS(on) max. ( ) at V GS = V.52 R DS(on) max. ( ) at V GS = 7.5 V.69 Q g typ. (nc) 58 I D (A) 9 Configuration Single FEATURES ThunderFET power MOSFET Tuned for the lowest R DS - Q oss FOM Maximum 75 C junction temperature % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting Synchronous rectification DC/DC converter Motor drive switch DC/AC inverter Solar micro inverter Class D audio amplifier G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TO-22AB SUP942E-GE3 ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V DS 2 Gate-source voltage V GS ± 2 V Continuous drain current 9 I D 52 Pulsed drain current (t = μs) I DM 24 A Continuous source-drain diode current I S 9 Single pulse avalanche current a I AS 6 L =. mh Single pulse avalanche energy a E AS 8 mj Maximum power dissipation 375 b P D 25 b W Operating junction and storage temperature range T J, T stg -55 to +75 Soldering recommendations (peak temperature) c 26 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MAXIMUM UNIT Maximum junction-to-ambient (PCB mount) c R thja 4 Maximum junction-to-case (drain) Steady state R thjc.4 C/W Notes a. Duty cycle %. b. See SOA curve for voltage derating. c. When mounted on " square PCB (FR4 material). d. Package limited. S6-647-Rev. A, 22-Aug-6 Document Number: 752 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SUP942E SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V DS V GS = V, I D = 25 μa 2 - - V Gate-source threshold voltage V GS(th) V DS = V GS, I D = 25 μa 2-4 V Gate-source leakage I GSS V DS = V, V GS = ± 2 V - - 25 na Zero gate voltage drain current I DSS V DS = 2 V, V GS = V, T J = 25 C - - 5 V DS = 2 V, V GS = V - - μa V DS = 2 V, V GS = V, T J = 75 C - - 5 ma On-state drain current a I D(on) V DS V, V GS = V 6 - - A Drain-source on-state resistance a V GS = V, I D = 3 A -.26.52 R DS(on) V GS = 7.5 V, I D = 3 A -.33.69 Forward transconductance a g fs V DS = 5 V, I D = 3 A - 63 - S Dynamic b Input capacitance C iss - 32 - Output capacitance C oss V DS = V, V GS = V, f = MHz - 28 - pf Reverse transfer capacitance C rss - 24 - Total gate charge Q g - 58 87 Gate-source charge Q gs V DS = V, V GS = V, I D = 6 A - 7.6 - Gate-drain charge Q gd - 7.2 - nc Output charge Q oss V DS = V, V GS = V - 8 62 Gate resistance R g f = MHz.5 3 5 Turn-on delay time t d(on) - 4 28 Rise time t r V DD = V, R L =.66, I D 6 A, - 25 25 Turn-off delay time t d(off) V GEN = V, R g = - 27 54 ns Fall time t f - 8 5 Drain-Source Body Diode Characteristics Pulse diode forward current (t = μs) I SM - - 24 A Body diode voltage V SD I F = 3 A, V GS = V -.85.5 V Body diode reverse recovery time t rr - 5 3 ns Body diode reverse recovery charge Q rr -.9.8 nc I F = 3 A, di/dt = A/μs Reverse recovery fall time t a - 25 - ns Reverse recovery rise time t b - 25 - Body diode peak reverse recovery charge I RM(REC) -.5 2 A Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S6-647-Rev. A, 22-Aug-6 2 Document Number: 752 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SUP942E 2 V GS = V thru 7 V 5 6 V GS = 6 V 2 2 8 4 V GS = 5 V 2 4 6 8 9 6 3 T C =-55 C 2 4 6 8 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics.6 7 R DS(on) - On-Resistance (Ω).5.4.3.2 V GS = 7.5 V V GS = V C - Capacitance (pf) 56 42 28 4 C oss C iss C rss. 2 4 6 8 2 4 6 8 On-Resistance vs. Drain Current and Gate Voltage Capacitance V GS - Gate-to-Source Voltage (V) 8 6 4 2 I D = 6 A V DS = V, 25 V, 5 V 3 26 39 52 65 Q g - Total Gate Charge (nc) R DS(on) - On-Resistance (Normalized) 3. 2.5 2..5. I D = 3 A V GS = V V GS = 7.5 V.5-5 -25 25 5 75 25 5 75 T J - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature S6-647-Rev. A, 22-Aug-6 3 Document Number: 752 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SUP942E.5 I D = 3 A I S - Source Current (A).. T J = 5 C T J = 25 C R DS(on) - On-Resistance (Ω).4.3.2. T J = 25 C T J = 25 C..2.4.6.8..2 V SD - Source-to-Drain Voltage (V) 4 5 6 7 8 9 V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage.5 V GS(th) - Variance (V) -.5 -. -.5 I D = 25 μa I D = 5 ma g fs - Transconductance (S) 8 6 4 2 T C =-55 C -2. -5-25 25 5 75 25 5 75 T J - Temperature ( C) Threshold Voltage 5 5 2 25 3 Transconductance I DM limited I D limited μs Limited by R () DS(on) ms ms. ms, DC Single pulse BVDSS limited.. () V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient S6-647-Rev. A, 22-Aug-6 4 Document Number: 752 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SUP942E 88 66 44 22 25 5 75 25 5 75 T C - Case Temperature ( C) Current Derating a 26 25 24 23 22 I D = ma I DAV (A) 5 C 25 C 2-5 -25 25 5 75 25 5 75 T J - Temperature ( C) Drain Source Breakdown vs. Junction Temperature..... Time (s) I DAV vs. Time Note a. The power dissipation P D is based on T J max. = 25 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S6-647-Rev. A, 22-Aug-6 5 Document Number: 752 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SUP942E Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2 Single pulse 4. Surface mounted.... Square Wave Pulse Duration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t 2 t. Duty cycle, D = t 2 2. Per unit base = R thja = 4 C/W 3. T JM -T A = P DM Z (t) thja Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2 Single pulse..... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?752. S6-647-Rev. A, 22-Aug-6 6 Document Number: 752 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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