APT2M11JLL 2V A.11Ω POWER MOS 7 R Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q g. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Increased Power Dissipation Easier To Drive Popular SOT-227 Package G S ISOTOP SOT-227 All Ratings: T C = 2 C unless otherwise specified. D S "UL Recognized" G D S Parameter APT2M11JLL S Drain-Source Voltage 2 M Continuous Drain Current @ T C = 2 C Pulsed Drain Current 1 74 M Gate-Source Voltage Continuous Gate-Source Voltage Transient ±3 ±4 P D Total Power Dissipation @ T C = 2 C Linear Derating Factor 694.6 Watts W/ C,T STG T L Operating and Storage Junction Temperature Range Lead Temperature:.63" from Case for 1 Sec. - to 1 3 C I AR Avalanche Current 1 (Repetitive and Non-Repetitive) E AR E AS Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 36 mj STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions BS Drain-Source Breakdown Voltage ( = V, = 2µA) 2 R DS(on) Drain-Source On-State Resistance 2 ( = 1V, = 88A) SS I GSS (th) Zero Gate Voltage Drain Current ( = 2V, = V) Zero Gate Voltage Drain Current ( = 16V, = V, T C = 12 C) Gate-Source Leakage Current ( = ±3V, = V) Gate Threshold Voltage ( =, = ma).11 1 ±1 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Ohms µa na -722 Rev D 9-24
DYNAMIC CHARACTERISTICS Characteristic C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Q g Total Gate Charge 3 Q gs Gate-Source Charge Q gd Gate-Drain ("Miller") Charge t d(on) Turn-on Delay Time t r Rise Time t d(off) Turn-off Delay Time t f Fall Time E on Turn-on Switching Energy 6 E off Turn-off Switching Energy E on Turn-on Switching Energy 6 E off Turn-off Switching Energy Test Conditions = V = 2V f = 1 MHz = 1V = 1V = A @ 2 C RESISTIVE SWITCHING = 1V = A @ 2 C R G =.6Ω INDUCTIVE SWITCHING @ 2 C = 133V, = A, R G = Ω INDUCTIVE SWITCHING @ 12 C = 133V, = A, R G = Ω APT2M11JLL 132 422 pf 9 18 8 nc 6 24 6 ns 9 119 248 126 µj 281 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS I S I SM V SD t rr Q rr dv / dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 ( = V, I S = -A) Reverse Recovery Time (I S = -A, dl S /dt = 1A/µs) Reverse Recovery Charge (I S = -A, dl S /dt = 1A/µs) Peak Diode Recovery dv / dt THERMAL CHARACTERISTICS Characteristic R θjc Junction to Case R θja Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 38 µs, Duty Cycle < 2% 3 See MIL-STD-7 Method 3471 APT Reserves the right to change, without notice, the specifications and inforation contained herein. 46 7. 74 1.3.18 4 ns µc V/ns C/W 4 Starting T j = +2 C, L =.23mH, R G = 2Ω, Peak I L = A dv / dt numbers reflect the limitations of the test circuit rather than the device itself. I S - A di / dt 7A/µs V R S 1 C 6 Eon includes diode reverse recovery. See figures 18, 2..2-722 Rev D 9-24 Z θjc, THERMAL IMPEDANCE ( C/W).1.1..9.7..3.1. 1-1 -4 1-3 1-2 1-1 1. 1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Note: P DM t 1 t 2 Duty Factor D = t 1/t 2 Peak = P DM x Z θjc + T C
Typical Performance Curves R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Junction temp. ( C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 3 3 2 2 1 1 > (ON) x R DS(ON) MAX. 2µSEC. PULSE TEST @ <. % DUTY CYCLE = +12 C = +2 C = - C.V 1 1 2 2 3 FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4.8 2 4 6 8 1 1 1 2 2 3 3, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS FIGURE, R DS(ON) vs DRAIN CURRENT 18 16 14 12 1 8 6 4 2 2 7 1 12 1.9 - -2 2 7 1 12 1 T C, CASE TEMPERATURE ( C), JUNCTION TEMPERATURE ( C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 2. 1.2 2. 1. 1.. Power (watts) Case temperature. ( C) I = 88A D V = 1 RC MODEL.268.19.426.46F.76F 23.F. - -2 2 7 1 12 1.6 - -2 2 7 1 12 1, JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 8, R DS(ON) vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE (TH), THRESHOLD VOLTAGE BS, DRAIN-TO-SOURCE BREAKDOWN R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VOLTAGE (NORMALIZED) 3 2 2 1 1 1.3 1.2 1.1 1..9 1.1 1.1 1. 1..9 1.1 1..9.8.7 =1 &1V 8V NORMALIZED TO = 1V @ = 88A =1V 7.V 7V =2V 6. 6V APT2M11JLL -722 Rev D 9-24
-722 Rev D 9-24, GATE-TO-SOURCE VOLTAGE (VOLTS) SWITCHING ENERGY (µj) t d(on) and t d(off) (ns) 74 1 APT2M11JLL 1mS 1 Crss T C =+2 C =+1 C 1mS SINGLE PULSE 1 1 1 1 1 2 1 2 3 4 FIGURE 1, MAXIMUM SAFE OPERATING AREA FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 16 14 12 1 8 6 4 2 OPERATION HERE LIMITED BY R DS (ON) = A =1V =4V =16V 1µS 1 1 1 2 2 3.3..7.9 1.1 1.3 1. Q g, TOTAL GATE CHARGE (nc) V SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 16 14 12 1 8 6 4 2 8 6 4 2 V = 13V L = 1µH t d(off) t d(on) R, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pf) 3, 1, 1, 1 1 =+1 C V = 13V L = 1µH =+2 C 3 6 9 12 1 18 21 24 27 3 6 9 12 1 18 21 24 27 (A) (A) FIGURE 14, DELAY TIMES vs CURRENT FIGURE 1, RISE AND FALL TIMES vs CURRENT V = 13V L = 1µH E ON includes diode reverse recovery. E off E on 3 6 9 12 1 18 21 24 27 1 1 2 2 3 3 4 4 (A) R G, GATE RESISTANCE (Ohms) FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE SWITCHING ENERGY (µj) t r and t f (ns) 3 2 2 1 1 1 8 6 4 2 V = 13V I = A D L = 1µH E ON includes diode reverse recovery. t f E off t r Eon Ciss Coss
Typical Performance Curves APT2M11JLL 9% 1% Gate Voltage 12 C Gate Voltage 12 C t d(on) t d(off) t r Drain Current 9% Drain Voltage 9% t f % 1% % 1% Switching Energy Drain Voltage Switching Energy Drain Current Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT2X11D2 G D.U.T. Figure 2, Inductive Switching Test Circuit SOT-227 (ISOTOP ) Package Outline 31. (1.24) 31.7 (1.248) 7.8 (.37) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48) 8.9 (.3) 9.6 (.378) Hex Nut M4 (4 places) r = 4. (.17) (2 places) 4. (.17) 4.2 (.16) (2 places) 2.2 (.992).7 (.3) 12.6 (.496) 2.4 (1.).8 (.33) 12.8 (.4) 3.3 (.129) 3.6 (.143) 1.9 (.77) 2.14 (.84) 14.9 (.87) * Source Drain 1.1 (.94) 3.1 (1.18) * Source terminals are shorted 3.3 (1.193) internally. Current handling 38. (1.496) capability is equal for either 38.2 (1.4) Source terminal. * Source Gate Dimensions in Millimeters and (Inches) ISOTOP is a Registered Trademark of SGS Thomson. APT s products are covered by one or more of U.S.patents 4,89,81,4,93,89,434,182,234,19,22,262,336 6,3,786,26,83 4,748,13,283,22,231,474,434,9,28,8 and foreign patents. US and Foreign patents pending. All Rights Reserved. -722 Rev D 9-24