LF LF LF3 WIDE BANDWIDTH SINGLE JFET OPERATIONAL AMPLIFIER. INTERNALLY ADJUSTABLE INPUT OFFSET. VOLTAGE LOW POWER CONSUMPTION WIDE COMMONMODE (UP TO V + CC ) AND DIFFERENTIAL VOLTAGE RANGE. LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORTCIRCUIT PROTECTION HIGH INPUT IMPEDANCE J FET INPUT STAGE. INTERNAL FREQUENCY COMPENSATION LATCH UP FREE OPERATION HIGH SLEW RATE : 6V/µs (typ) N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) DESCRIPTION These circuits are high speed J FET input single operationalamplifiers incorporatingwell matched,high voltage J FET and bipolar transistors in a monolithic integrated circuit. The devicesfeaturehigh slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. ORDER CODES Part Number Temperature Package N D LF3 o C, +7 o C LF 4 o C, + o C LF o C, + o C PIN CONNECTIONS (top view) 2 3 4 8 7 6 Offset Null 2 Inverting input 3 Noninverting input 4 Offset Null 2 6 Output 7 + 8 N.C. October 997 /9
LF LF LF3 SCHEMATIC DIAGRAM Noninverting input Inveinput rting Ω 2Ω Output 3k Ω 8.2k.3k 3k.3k 3k Ω Offse t Null Offset Null2 INPUT OFFSET VOLTAGE NULL CIRCUITS LF3 N N2 kω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Supply Voltage (note ) ±8 V Vi Input Voltage (note 3) ± V V id Differential Input Voltage (note 2) ±3 V P tot Power Dissipation 68 mw Output Shortcircuit Duration (note 4) Infinite T oper Operating Free Air Temperature Range LF3 LF LF to7 4 to to T stg Storage Temperature Range 6 to Notes :. All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference level is the midpoint between VCC + and VCC. 2. Differential voltages are at the noninverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or volts, whichever is less. 4. The output may be shorted to ground or to either supply. Temperature and /or supply voltages must be limited to ensure that the dissipation rating is not exceeded. o C o C 2/9
LF LF LF3 ELECTRICAL CHARACTERISTICS VCC = ±V, Tamb = o C (unless otherwise specified) Symbol V io Input Offset Voltage (R S = kω) Tamb = o C Parameter LF LF LF3 Min. Typ. Max. 3 3 DV io Input Offset Voltage Drift µv/ o C I io Input Offset Current * T amb = o C 4 Iib Input Bias Current * T amb = o C 2 2 T min. T amb T max. 2 Large Signal Voltage Gain (RL = 2kΩ,VO = ±V) T amb = o C 2 T min. T amb T max. Avd SVR ICC Supply Voltage Rejection Ratio (RS = kω) Tamb = o C Supply Current (no load) Tamb = o C V icm Input Common Mode Voltage Range ± + 2 CMR Common Mode Rejection Ratio (RS = kω) Tamb = o C 7 T min. T amb T max. 7 86 Ios Output Shortcircuit Current Tamb = o C ±V OPP Output Voltage Swing T amb = o C R L = 2kΩ R L = kω T min. T amb T max. R L = 2kΩ R L = kω 8 8 2 2 86.4 3.4 3.4 4 6 6 SR Slew Rate V/µs (V i = V, R L =2kΩ, C L = pf, T amb = o C, unity gain) 2 6 tr Rise Time µs (V i = 2mV, R L =2kΩ,C L = pf, T amb = o C, unity gain). KOV Overshoot % (Vi = 2mV, RL =2kΩ,CL= pf, Tamb = o C, unity gain) GBP Gain Bandwidth Product MHz (f = khz, Tamb = o C, Vin = mv, RL =2kΩ,CL= pf) 2. 4 R i Input Resistance 2 Ω THD Total Harmonic Distortion (f = khz, AV = 2dB, RL =2kΩ, % CL= pf, Tamb = o C, VO =2VPP). e n Equivalent Input Noise Voltage (f = khz, R s = Ω) nv Hz m Phase Margin 4 Degrees * The input bias currents are junction leakage currents which approximately double for every o C increase in the junction temperature. 2 3. Unit mv pa na pa na V/mV db ma V db ma V 3/9
LF LF LF3 VOLTAGE VERSUS FREQUENCY VOLTAGE VERSUS FREQUENCY 3 R L =2kΩ T amb =+ C 2 See Figure 2 = V = V K K K M M 3 2 = = V V = R L =kω T amb =+ C See Figure 2 K K K M M V VOLTAGE VERSUS FREQUENCY VOLTAGE VERSUS FREE AIR TEMP. 3 2 T amb =+ C T amb = C T amb =+ C k 4k k 4k M 4M M = V R L =2kΩ Se e Figure 2 3 2 S e e Figure 2 7 7 R L =kω R L =2kΩ VOLTAGE VERSUS LOAD RESISTANCE VOLTAGE VERSUS SUPPLY VOLTAGE 3 2 = V T amb =+ C S ee Figure 2..2.4.7 2 4 7 LOAD RESISTANCE (kω) 3 2 R L=kΩ T amb =+ C 2 4 6 8 2 4 6 SUPPLY 4/9
LF LF LF3 INPUT BIAS CURRENT VERSUS FREE AIR TEMPERATURE LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION VERSUS FREE AIR TEMPERATURE INPUT BIAS CURRENT (na).. 7 DIFFERENTIAL VOLTAGE AMPLIFICATION (V/V) 4 2 4 2 V 4 O = V 2 R L =2kΩ 7 7 LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT VERSUS FREQUENCY TOTAL POWER DISSIPATION VERSUS FREE AIR TEMPERATURE DIFFERENTIAL VOLTAGE AMPLIFICATION(V/V) PHASE SHIFT (right scale) R = 2kΩ L C L = pf T amb = + C DIFFERENTIAL VOLTAGE AMPLIFICATION (left s ca le ) K K K M M 8 9 TOTAL POWER DISSIPATION (mv) 2 2 7 7 +/V No signa l No loa d 7 7 SUPPLY CURRENT PER AMPLIFIER VERSUS FREE AIR TEMPERATURE SUPPLY CURRENT PER AMPLIFIER VERSUS SUPPLY VOLTAGE SUPPLY CURRENT (ma) 2..8.6.4.2..8.6.4.2 No signa l No load 7 7 SUPPLY CURRENT (ma) 2..8.6.4.2..8.6.4.2 T amb = + C No signa l No load 2 4 6 8 2 4 6 SUPPLY /9
LF LF LF3 COMMON MODE REJECTION RATIO VERSUS FREE AIR TEMPERATURE VOLTAGE FOLLOWER LARGE SIGNAL PULSE RESPONSE COMMON MODE MODE REJECTION RATIO (db) 89 88 87 86 8 84 83 7 R L =kω 7 INPUT AND OUTPUT VOLTAGES (V) 6 4 2 2 4 6 OUTPUT R L =2kΩ C L = pf T amb =+ C.. 2 2. 3 3. TIME (µs) INPUT OUTPUT VOLTAGE VERSUS ELAPSED TIME EQUIVALENT INPUT NOISE VOLTAGE VERSUS FREQUENCY OUTPUT VOLTAGE (mv) 28 24 2 6 2 8 4 4 OVERSHOOT % 9% t r..2.3.4..6.7 TIME (µs) = V R L=2k Ω T amb = + C EQUIVALENT INPUT NOISE VOLTAGE (nv/vhz) 7 6 4 3 2 A V = R S= Ω T amb =+ C 4 4 k 4k k 4k k TOTAL HARMONIC DISTORTION VERSUS FREQUENCY TOTAL HARMONIC DISTORTION (%) V =.4 CC = V AV AV = = VV. O (rms)= O (rms)= 6V 6V T amb T.4 amb =+ CC..4. 4 k 4k k 4k k 6/9
LF LF LF3 PARAMETER MEASUREMENT INFORMATION Figure : Voltage Follower Figure 2 : Gainof Inverting Amplifier k Ω LF3 e o e I k Ω LF3 e o e I C L = pf R = 2kΩ L Ρ L C L = pf TYPICAL APPLICATION (.Hz) SQUARE WAVE OSCILLATOR R F = k Ω 3.3k Ω +V LF3 C = 3.3 µf F f = osc 2xRF CF V 3.3k Ω k Ω 9.k Ω HIGH Q NOTCH FILTER R R2 LF3 f = o 2xR C = khz C3 R3 C = C2 = C3 2 = pf R=R2=2R3=.MΩ C C2 7/9
LF LF LF3 PACKAGE MECHANICAL DATA 8 PINS PLASTIC DIP PMDIP8.EPS Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 3.32.3 a..2 B..6.4.6 b.36..4.22 b.24.34.8.2 D.92.43 E 7.9 9.7.33.384 e 2.4. e3 7.62.3 e4 7.62.3 F 6.6 26 i.8.2 L 3.8 3.8.. Z.2.6 DIP8.TBL 8/9
LF LF LF3 PACKAGE MECHANICAL DATA 8 PINS PLASTIC MICROPACKAGE (SO) PMSO8.EPS Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A.7.69 a...4. a2.6.6 a3.6.8.26.33 b.3.48.4.9 b.9..7. C....2 c 4 o (typ.) D 4.8..89.97 E.8 6.2.228.244 e.27. e3 3.8. F 3.8 4...7 L.4.27.6. M.6.24 S 8 o (max.) SO8.TBL Information furnished is believed to be accurate and reliable. However, SGSTHOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGSTHOMSON Microelectronics. Specifications mentioned in this publicationare subject to change without notice. This publication supersedes and replaces all information previously supplied. SGSTHOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGSTHOMSON Microelectronics. 997 SGSTHOMSON Microelectronics Printed in Italy All Rights Reserved SGSTHOMSON Microelectronics GROUP OF COMPANIES Australia Brazil Canada China France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdo m U.S.A. ORDER CODE : 9/9