MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector Emitter Sustaining oltage CEO(sus) = dc (Min) @ I C = madc High DC Current Gain h FE = 7 (Min) @ I C = madc = 4 (Min) @ I C = Adc = (Min) @ I C = Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Low Collector Emitter Saturation oltage CE(sat) =. dc (Max) @ I C = madc =.7 dc (Max) @ I C =. Adc High Current Gain Bandwidth Product f T = 6 MHz (Min) @ I C = madc Annular Construction for Low Leakage I CBO = nadc @ Rated CB Epoxy Meets UL 94 @. in ESD Ratings: Human Body Model, B 8 Machine Model, C 4 Pb Free Packages are Available MAXIMUM RATINGS Rating Symbol Max Unit Collector Base oltage CB 4 dc Collector Emitter oltage CEO dc Emitter Base oltage EB 8. dc Collector Current Continuous Peak I C. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. These ratings are applicable when surface mounted on the minimum pad sizes recommended. Semiconductor Components Industries, LLC, 6 Publication Order Number: August, 6 Rev. 8 MJD/D Adc Base Current I B. Adc Total Power Dissipation @ T C = C Derate above C Total Power Dissipation (Note ) @ T A = C Derate above C Operating and Storage Junction Temperature Range P D.. P D.4. W W/ C W W/ C T J, T stg 6 to + C SILICON POWER TRANSISTORS AMPERES OLTS,. WATTS CASE 69C STYLE MARKING DIAGRAM Y WW G YWW JxG 4 = Year = Work Week x = or = Pb Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet.
MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction to Ambient (Note ) R JA 89. C/W. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T C = C unless otherwise noted) Characteristic Symbol ÎÎÎ Min Max ÎÎÎ Unit OFF CHARACTERISTICS Collector Emitter Sustaining oltage (Note ), (I C = madc, I B = ) CEO(sus)ÎÎÎ ÎÎÎ dc Collector Cutoff Current ( CB = 4 dc, I E CBO ÎÎ = ) ( CB = 4 dc, I E =, T J = C) nadc ÎÎÎ Adc Emitter Cutoff Current ( BE = 8 dc, I C = ) EBO ÎÎÎ ÎÎÎ nadc ON CHARACTERISTICS DC Current Gain (Note ), (I C = madc, CE h FE ÎÎ = dc) (I C = Adc, CE = dc) 7 4 8 ÎÎÎ (I C = Adc, CE = dc) Collector Emitter Saturation oltage (Note ) (I C = madc, I B = madc) CE(sat) dc (I C = Adc, I B = madc) (I C = Adc, I B = Adc). ÎÎÎ.7 ÎÎÎ.8 Base Emitter Saturation oltage (Note ), (I C = Adc, I B = Adc) BE(sat) ÎÎÎ. dc Base Emitter On oltage (Note ), (I C = Adc, CE = dc) BE(on) ÎÎÎ.6 dc DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 4) f T (I C = madc, CE = dc, f test = MHz) 6 ÎÎÎ MHz Output Capacitance MJD C ob ÎÎÎ 8 pf ÎÎÎ ( CB = dc, I E =, f =. MHz) MJD. Pulse Test: Pulse Width = s, Duty Cycle %. 4. f T = h fe f test. ORDERING INFORMATION MJD MJDG MJDRL MJDRLG MJDT4 MJDT4G MJD MJDG MJDRL MJDRLG MJDT4 MJDT4G Device Package Type Shipping 7 Units / Rail 8 / Tape & Reel / Tape & Reel 7 Units / Rail 8 / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.
MJD (NPN) MJD (PNP) T A. T C CC + P D, POWER DISSIPATION (WATTS).. T A (SURFACE MOUNT) T C + 9 s t r, t f ns DUTY CYCLE = % R B 4 R B and R C ARIED TO OBTAIN DESIRED CURRENT LEELS D R C SCOPE 7 T, TEMPERATURE ( C) D MUST BE FAST RECOERY TYPE, e.g.: МN8 USED ABOE I B ma МMSD6 USED BELOW I B ma FOR PNP TEST CIRCUIT, REERSE ALL POLARITIES Figure. Power Derating Figure. Switching Time Test Circuit t, TIME (ns) K t d t, TIME (ns) K K K K K CC = I C /I B = I B = I B T J = C t CC = r I C /I B = T J = C MJD MJD MJD MJD t f................ t s Figure. Turn On Time Figure 4. Turn Off Time
MJD (NPN) MJD (PNP) NPN MJD PNP MJD 4 T J = C 4 h FE, DC CURRENT GAIN 8 6 4 C C CE = CE = h FE, DC CURRENT GAIN 8 6 4 T J = C C C CE = CE =..7.....7..7.....7 Figure. DC Current Gain.6 T J = C.6 T J = C, OLTAGE (OLTS), OLTAGE (OLTS)...8 BE(sat) @ I C /I B =.8 BE(sat) @ I C /I B = BE @ CE = BE @ CE =.4.4 CE(sat) @ I C /I B = CE(sat) @ I C /I B =..7.....7..7.....7 Figure 6. On oltage, TEMPERATURE COEFFICIENTS (m/c) θ +. + +. + +... *APPLIES FOR I C /I B h FE/ C for CE(sat) B for BE C to C C to C C to C C to C...7.....7, TEMPERATURE COEFFICIENTS (m/c) θ Figure 7. Temperature Coefficients +. + +. + +... *APPLIES FOR I C /I B h FE/ * C for CE(sat) B for BE C to C C to C C to C C to C...7.....7 4
MJD (NPN) MJD (PNP) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED).7.....7... D =...... (SINGLE PULSE) R JC (t) = r(t) JC R JC = C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T C = P (pk) JC (t) P (pk) t t DUTY CYCLE, D = t /t...... t, TIME (ms) Figure 8. Thermal Response I C, COLLECTOR CURRENT (AMP)... There are two limitations on the power handling ability of ms a transistor: average junction temperature and second T J = C s breakdown. Safe operating area curves indicate I C CE ms limits of the transistor that must be observed for reliable s operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. dc The data of Figure 9 is based on T J(pk) = C; T C is BONDING WIRE LIMITED variable depending on conditions. Second breakdown pulse THERMALLY LIMITED @ T C = C limits are valid for duty cycles to % provided T М(SINGLE PULSE) J(pk) SECOND BREAKDOWN LIMITED C. T J(pk) may be calculated from the data in МCURES APPLY BELOW Figure 8. At high case temperatures, thermal limitations will МRATED CEO reduce the power that can be handled to values less than the 7 CE, COLLECTOR EMITTER OLTAGE () limitations imposed by second breakdown. Figure 9. Active Region Safe Operating Area T J = C C, CAPACITANCE (pf) 7 C ib C ob MJD (NPN) MJD (PNP).4.6 4 6 R, REERSE OLTAGE () 4 Figure. Capacitance
MJD (NPN) MJD (PNP) PACKAGE DIMENSIONS CASE 69C ISSUE O S F B R 4 G L A K D PL J H C. (.) M T T SEATING PLANE E U SOLDERING FOOTPRINT* 6..44..8 Z NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 98.. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A..4.97 6. B..6 6. 6.7 C.86.94.9.8 D.7..69.88 E.8..46.8 F.7.4.94.4 G.8 BSC 4.8 BSC H.4.4.87. J.8..46.8 K..4.6.89 L.9 BSC.9 BSC R.8. 4.7.4 S..4.6. U.....89.7 Z..9 STYLE : PIN. BASE. COLLECTOR. EMITTER 4. COLLECTOR.8..8.6 6.7.8.6.4 SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 87 USA Phone: 67 7 or 8 44 86 Toll Free USA/Canada Fax: 67 76 or 8 44 867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 98 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 4 79 9 Japan Customer Focus Center Phone: 8 77 8 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJD/D