FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: V CE(sat), typ = 2. V @ = 25 A and Low Switching Loss: E off, typ =.96 mj @ = 25 A and Extremely Enhanced Avalanche Capability Applications Induction Heating, Microwave Oven G C E Absolute Maximum Ratings TO-3P Description Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 2V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven. G C E FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Symbol Description Ratings Unit V CES Collector-Emitter Voltage 2 V S Gate-Emitter Voltage ± 2 V Collector Current @ 5 A Collector Current @ = C 25 A M () Pulsed Collector Current 9 A I F Diode Continuous Forward Current @ 5 A Diode Continuous Forward Current @ = C 25 A I FM Diode Maximum Forward Current 5 A P D Maximum Power Dissipation @ 32 W Maximum Power Dissipation @ = C 25 W T J Operating Junction Temperature -55 to +5 C T stg Storage Temperature Range -55 to +5 C T L Maximum Lead Temp. for soldering Purposes, / from case for 5 seconds Notes: () Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics 3 C Symbol Parameter Typ. Max. Unit R θjc (IGBT) Thermal Resistance, Junction-to-Case --. C/W R θjc (DIODE) Thermal Resistance, Junction-to-Case -- 2. C/W R θja Thermal Resistance, Junction-to-Ambient -- C/W 26 Semiconductor Components Industries, LLC. October-27,Rev.3 Publication Order Number: FGA25N2ANTDTU/D
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGA25N2ANTDTU-F9 FGA25N2ANTDTU TO-3PN Tube N/A N/A 3 Electrical Characteristics of the IGBT unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics ES Collector Cut-Off Current V CE = V CES, = V -- -- 3 ma I GES G-E Leakage Current = S, V CE = V -- -- ± 25 na On Characteristics (th) G-E Threshold Voltage = 25 ma, V CE = 3.5 5.5 7.5 V = 25 A, = 5 V -- 2. -- V Collector to Emitter I V C = 25 A, = 5 V, -- 2.5 -- V CE(sat) Saturation Voltage = 5 A, = 5 V -- 2.65 -- V Dynamic Characteristics C ies Input Capacitance V CE = 3 V, = V, -- 37 -- pf C oes Output Capacitance f = MHz -- 3 -- pf C res Reverse Transfer Capacitance -- -- pf FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Switching Characteristics t d(on) Turn-On Delay Time -- 5 -- ns t r Rise Time -- 6 -- ns t d(off) Turn-Off Delay Time V CC = 6 V, = 25 A, -- 9 -- ns t f Fall Time R G = Ω, = 5 V, -- -- ns E on Turn-On Switching Loss Inductive Load, --. -- mj E off Turn-Off Switching Loss --.96 -- mj E ts Total Switching Loss -- 5.6 -- mj t d(on) Turn-On Delay Time -- 5 -- ns t r Rise Time -- 6 -- ns t d(off) Turn-Off Delay Time V CC = 6 V, = 25 A, -- 2 -- ns t f Fall Time R G = Ω, = 5 V, -- 5 -- ns E on Turn-On Switching Loss Inductive Load, --.3 -- mj E off Turn-Off Switching Loss --.5 -- mj E ts Total Switching Loss -- 5. -- mj Q g Total Gate Charge -- 2 -- nc Q ge Gate-Emitter Charge V CE = 6 V, = 25 A, = 5 V -- 5 -- nc Q gc Gate-Collector Charge -- -- nc 2
Electrical Characteristics of DIODE unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit V FM Diode Forward Voltage I F = 25 A t rr I rr Q rr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge I F = 25 A di F /dt = 2 A/μs -- 2. 3. -- 2. -- -- 235 35 -- 3 -- -- 27 -- 3 -- -- 33 7 -- 65 -- V ns A nc FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT 3
Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, 6 2 6 2 2V 7V 5V 2V 2 6 V 9V V 7V = 6V Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 3. 2.5 2. = 5V A = 25A Figure 2. Typical Saturation Voltage Characteristics Collector Current, 2 6 2 = 5V 2 3 5 Figure. Saturation Voltage vs. 2 6 2 = 2.5A A 25A = - C FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT.5 25 5 75 25 Case Temperature, [ C] 2 6 2 Gate-Emitter Voltage, Figure 5. Saturation Voltage vs. Figure 6. Saturation Voltage vs. 2 2 6 2 = 2.5A A 25A 6 2 = 2.5A A 25A 2 6 2 2 6 2 Gate-Emitter Voltage, Gate-Emitter Voltage,
Typical Performance Characteristics (Continued) Figure 7. Capacitance Characteristics Capacitance [pf] 5 5 35 3 25 2 5 5 Ciss Coss Crss = V, f = MHz Figure 9. Turn-Off Characteristics vs. Gate Resistance Switching Time [ns] V CC = 6V, = ±5V = 25A 2 3 5 6 7 Gate Resistance, R G [Ω] td(off) tf Figure. Turn-On Characteristics vs. Gate Resistance Switching Time [ns] tr td(on) V CC = 6V, = ±5V = 25A 2 3 5 6 7 Gate Resistance, R G [Ω] Figure. Switching Loss vs. Gate Resistance Switching Loss [mj] V CC = 6V, = ±5V = 25A Eon Eoff 2 3 5 6 7 Gate Resistance, R G [Ω] FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Figure. Turn-On Characteristics vs. Collector Current Figure 2. Turn-Off Characteristics vs. Collector Current = ±5V, R G = Ω Switching Time [ns] tr td(on) Switching Time [ns] = ±5V, R G = Ω td(off) tf 2 3 5 Collector Current, 2 3 5 Collector Current, 5
]hjc[ztnsespolremaher..3e-5e-e-3..rectangularpulduration[sectypical Performance Characteristics (Continued) Figure 3. Switching Loss vs. Collector Current Switching Loss [mj] = ±5V, R G = Ω Eon Eoff. 2 3 5 Collector Current, Figure 5. SOA Characteristics Collector Current, Ic. Ic MAX (Pulsed) Ic MAX (Continuous) Single Nonrepetitive Pulse DC Operation ms μs 5μs Curves must be derated linearly with increase in temperature.. Collector - Emitter Voltage, V CE Figure. Gate Charge Characteristics Gate-Emitter Voltage, 6 2 6 2 R L = 2Ω Vcc = 2V V 6V 2 6 2 6 2 Figure 6. Turn-Off SOA Collector Current, Gate Charge, Q g [nc] Safe Operating Area = 5V, FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT.5.2. Figure 7. Transient Thermal Impedance of IGBTE-.5.2. single pulsetsepdm t t2 Duty factor D = t / t2 Peak Tj = Pdm Zthjc + ] 6
Typical Performance Characteristics (Continued) Figure. Forward Characteristics Figure 9. Reverse Recovery Current Forward Current, I F 5 T J = 25 )Χ T J = 25 )Χ = 25 )Χ = 25 )Χ.....2.6 2. Forward Voltage, V F Reverse Recovery Currnet, I rr 3 25 2 5 di F /dt = 2A/μs di F /dt = A/μs 5 5 5 2 25 Forward Current, I F Figure 2. Stored Charge Figure 2. Reverse Recovery Time Stored Recovery Charge, Q rr [nc] 3 2 di F /dt = 2A/μs di F /dt = A/μs 5 5 2 25 Forward Current, I F Reverse Recovery Time, t rr [ns] 3 2 di F /dt = A/μs di F /dt = 2A/μs 5 5 2 25 Forward Current, I F FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT 7
Mechanical Dimensions FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Figure 22. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
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