100V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features 33A, 100V, R DS(on) = 0.052Ω @ = 10 V Low gate charge ( typical 38 nc) Low Crss ( typical 62 pf) Fast switching 100% avalanche tested Improved dv/dt capability 175 C maximum junction temperature rating D! G D S TO-220 FQP Series G "! " "! "! S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Units S Drain-Source Voltage 100 V I D Drain Current - Continuous (T C = 25 C) 33 A - Continuous (T C = 100 C) 23 A I DM Drain Current - Pulsed (Note 1) 132 A S Gate-Source Voltage ±25 V E AS Single Pulsed Avalanche Energy (Note 2) 435 mj I AR Avalanche Current (Note 1) 33 A E AR Repetitive Avalanche Energy (Note 1) 12.7 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P D Power Dissipation (T C = 25 C) 127 W - Derate above 25 C 0.85 W/ C T J, T STG Operating and Storage Temperature Range -55 to +175 C T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 C Thermal Characteristics Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction-to-Case -- 1.18 CW R θcs Thermal Resistance, Case-to-Sink 0.5 -- CW R θja Thermal Resistance, Junction-to-Ambient -- 62.5 CW
Electrical CharacteristicsT C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 µa 100 -- -- V BS Breakdown Voltage Temperature / T J Coefficient I D = 250 µa, Referenced to 25 C -- 0.11 -- V/ C I DSS = 100 V, = 0 V -- -- 1 µa Zero Gate Voltage Drain Current = 80 V, T C = 150 C -- -- 10 µa I GSSF Gate-Body Leakage Current, Forward = 25 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -25 V, = 0 V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, I D = 250 µa 2.0 -- 4.0 V R DS(on) Static Drain-Source V On-Resistance GS = 10 V, I D = 16.5 A -- 0.040 0.052 Ω g FS Forward Transconductance = 40 V, I D = 16.5 A (Note 4) -- 22 -- S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, -- 1150 1500 pf C oss Output Capacitance f = 1.0 MHz -- 320 420 pf C rss Reverse Transfer Capacitance -- 62 80 pf Switching Characteristics t d(on) Turn-On Delay Time -- 15 40 ns = 50 V, I D = 33 A, t r Turn-On Rise Time R G = 25 Ω -- 195 400 ns t d(off) Turn-Off Delay Time -- 80 170 ns t f Turn-Off Fall Time (Note 4, 5) -- 110 230 ns Q g Total Gate Charge = 80 V, I D = 33 A, -- 38 51 nc Q gs Gate-Source Charge = 10 V -- 7.5 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 18 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 33 A -- -- 1.5 V t rr Reverse Recovery Time = 0 V, I S = 33 A, -- 80 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) -- 0.22 -- µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.6mH, I AS = 33A, = 25V, R G = 25 Ω, Starting T J = 25 C 3. I SD 33A, di/dt 300A/µs, BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
Typical Characteristics I D, Drain Current [A] 10 2 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 10 1 1. 250s Pulse Test 2. T C = 25 10-1 10 1, Drain-Source Voltage [V] I D, Drain Current [A] 10 2 10 1 175 25-55 2 4 6 8 10, Gate-Source Voltage [V] 1. = 40V 2. 250s Pulse Test Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.20 10 2 R DS(ON) [ ], Drain-Source On-Resistance 0.15 0.10 0.05 = 10V = 20V Note : T J = 25 0.00 0 20 40 60 80 100 120 I D, Drain Current [A] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage I DR, Reverse Drain Current [A] 10 1 175 25 1. = 0V 2. 250s Pulse Test 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V SD, Source-Drain voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3000 2500 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 12 10 = 50V = 80V Capacitance [pf] 2000 1500 1000 500 C iss C oss C rss 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 8 6 4 2 Note : I D = 33A 0 10-1 10 1, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 0 0 5 10 15 20 25 30 35 40 Q G, Total Gate Charge [nc] Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued) 1.2 3.0 2.5 BS, (Normalized) Drain-Source Breakdown Voltage 1.1 1.0 0.9 1. = 0 V 2. I D = 250 A R DS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.5 1.0 0.5 1. = 10 V 2. I D = 16.5 A 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs. Temperature 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 8. On-Resistance Variation vs. Temperature 35 Operation in This Area is Limited by R DS(on) 30 I D, Drain Current [A] 10 2 10 1 DC 100 µs 1 ms 10 ms I D, Drain Current [A] 25 20 15 10 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse 10 1 10 2, Drain-Source Voltage [V] 5 0 25 50 75 100 125 150 175 T C, Case Temperature [] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z JC (t), Therm al Response 10-1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 1. Z JC (t) = 1.18 /W M a x. 2. D u ty Fa c to r, D = t 1 /t 2 3. T JM - T C = P DM * Z JC (t) P DM t 1 t 2 10-2 10-5 10-4 10-3 10-2 10-1 10 1 t 1, S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve
Gate Charge Test Circuit & Waveform 12V 200nF 50K 300nF Same Type as DUT 10V Q g Q gs Q gd 3mA DUT Charge Resistive Switching Test Circuit & Waveforms R L 90% R G 10V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- 2 LI 2 AS BS -------------------- BS - I D BS I AS R G I D (t) 10V DUT (t) t p t p Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + _ I SD L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop
Mechanical Dimensions TO - 220 Dimensions in Millimeters
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