DATA SHEET. PZ1418B30U NPN microwave power transistor DISCRETE SEMICONDUCTORS Nov 13. Product specification Supersedes data of 1997 Feb 19

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DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D034 Supersedes data of 997 Feb 9 997 Nov 3

FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance Internal input and output prematching ensures good stability and easy broadband use. PINNING - SOT443A PIN DESCRIPTION collector emitter 3 base; connected to flange handbook, halfpage c APPLICATIONS Common base class-b broadband amplifiers under CW conditions in military and professional applications. 3 b e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Top view MAM34 Fig. Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to T mb =5 C in a common base class-b wideband amplifier. f (GHz) V CC (V) P L (W) G p (db) η C (%) Z i ; Z L (Ω).4 to.8 8 7 7.3 38 see Figs 6 and 7 Product and environmental safety - toxic materials WARNING This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 997 Nov 3

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 40 V V CEO collector-emitter voltage open base 5 V V CES collector-emitter voltage R BE =0 35 V V EBO emitter-base voltage open collector 3 V I C collector current (DC) 4 A P tot total power dissipation T mb 75 C 45 W T stg storage temperature 65 +00 C T j operating junction temperature 00 C T sld soldering temperature 35 C 50 handbook, P tot (W) 40 MGD970 30 0 0 0 0 50 00 50 00 T mb ( C) Fig. Power derating curve as a function of mounting base temperature. 997 Nov 3 3

THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT R th j-mb thermal resistance from junction to mounting-base T j =75 C. K/W R th mb-h thermal resistance from mounting-base to heatsink T j =75 C; note 0. K/W Note. See Mounting recommendations in the General part of handbook SC9a. CHARACTERISTICS T mb =5 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT I CBO collector cut-off current V CB =40V; I E = 0 0 ma V CB =30V; I E =0 5 ma I CES collector cut-off current V CE =35V; R BE = 0 50 ma I EBO emitter cut-off current V EB =.5 V; I C = 0 00 µa APPLICATION INFORMATION Microwave performance up to T mb =5 C in a common base class B wideband amplifier. f (GHz) V CC (V) P L (W) G p (db) η C (%) Z i ; Z L (Ω).4 to.8 8 7 typ. 35 7.3 typ. 8.4 38 typ. 45 see Figs 6 and 7 handbook, full pagewidth input 50 Ω 0.65 4 5 5 5.5,,,,,,,,,,,,,,,,, 6.5 4 output 50 Ω 0.65 8.5 00 pf (ATC) MGK064 Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity: ε r = 0. Fig.3 Wideband test circuit board for.4 to.8 GHz operation. 997 Nov 3 4

40 handbook, halfpage P L (W) () () (3) MGD984 40 handbook, halfpage P L (W) 30 P L MGL066 0 η C η C (%) 50 40 0 0 4 6 P i (W) VSWR.4.5.6.7.8.9 f (GHz) VSWR Class-B operation; V CC = 8 V; T mb =5 C. ().4 GHz. ().6 GHz. (3).8 GHz. Fig.4 Load power as a function of input power; typical values. Class-B operation; V CC = 8 V; T mb =5 C; P i =5W. Fig.5 Load power, efficiency and VSWR as functions of frequency; typical values. 997 Nov 3 5

handbook, full pagewidth 0.5.4 GHz 0..6 5 + j j 0.8 0. 0.5 5 0 5Ω 0 0 0. 5 0.5 MGL04 Z o =5Ω. Fig.6 Input impedance as a function of frequency; typical values. handbook, full pagewidth 0.5 0. 5 + j j 0.6 5 Ω 0. 0.5 5 0.8.4 GHz 0 0 0. 5 0.5 MGL05 Z o =5Ω. Fig.7 Optimum load impedance as a function of frequency; typical values. 997 Nov 3 6

PACKAGE OUTLINE Flanged hermetic ceramic package; mounting holes; leads SOT443A D A 3 F U B q C c L U E E A p w L M A B b w M C Q 0 5 0 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D E E F L p Q q U U w w mm 6.33 4.87 3..89 0.6 0.07 0.47 9.90 8.3 7.87 0. 9.90.6.44 6.5 5.74 3.4 3.0 3.6.84 6.5 3..70 9.9 9.70 0.5.0 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT443A 97-05-3 997 Nov 3 7

DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 997 Nov 3 8

NOTES 997 Nov 3 9

NOTES 997 Nov 3 0

NOTES 997 Nov 3

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