Optocoupler, Phototransistor Output, SOP-6L5, Half Pitch, Long Mini-Flat Package

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TCLT11. Series Optocoupler, Phototransistor Output, SOP-6L5, Half Pitch, Long Mini-Flat Package 22649 DESCRIPTION The TCLT11. series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 5-lead SOP-6L package. APPLICATIONS Switchmode power supplies Computer peripheral interface Microprocessor system interface 5 4 3 1 2 FEATURES SMD low profile 5 pin package Isolation test voltage 5 V RMS CTR flexibility available see order information Special construction Extra low coupling capacitance Connected base DC input with transistor output Creepage distance > 8 mm Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS UL1577, file no. E76222 CSA E76222 22.2 bulletin 5A BSI IEC 695 IEC 665 DIN EN 6747-5-5 FIMKO CQC Note See the safety standard approval list Agency Table for more detailed information. ORDERING INFORMATION T C L T 1 1 # PART NUMBER SOP-6L5 1.2 mm AGENCY CTR (%) CERTIFIED/PACKAGE 5 ma 1 ma 5 ma UL, cul, VDE, BSI, FIMKO 5 to 6 63 to 125 1 to 2 16 to 32 5 to 15 1 to 3 8 to 16 13 to 26 2 to 4 SOP-6L5 TCLT11 TCLT112 TCLT113 TCLT114 TCLT115 TCLT116 TCLT117 TCLT118 TCLT119 Rev. 2.5, 16-May-13 1 Document Number: 83514 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

TCLT11. Series ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current 6 ma Forward surge current t P 1 μs SM 1.5 A Power dissipation P diss 1 mw Junction temperature T j 125 C OUTPUT Collector emitter voltage V CEO 8 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t P /T =.5, t P 1 ms I CM 1 ma Power dissipation P diss 15 mw Junction temperature T j 125 C COUPLER Isolation test voltage (RMS) V ISO 5 V RMS Total power dissipation P tot 25 mw Operating ambient temperature range T amb - 55 to + 1 C Storage temperature range T stg - 55 to + 125 C Soldering temperature (1) T sld 26 C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Wave soldering three cycles are allowed. Also refer to Assembly Instruction (www.vishay.com/doc?854). ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage = ± 5 ma V F 1.25 1.6 V Junction capacitance V R = V, f = 1 MHz C j 5 pf OUTPUT Collector emitter voltage I C = 1 ma V CEO 7 V Emitter collector voltage I E = 1 μa V ECO 7 V Collector emitter leakage current V CE = 2 V, = A I CEO 1 1 na COUPLER Collector emitter saturation voltage = 1 ma, I C = 1 ma V CEsat.3 V Cut-off frequency V CE = 5 V, = 1 ma, R L = 1 f c 11 khz Coupling capacitance f = 1 MHz C k.3 pf Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are noart of the testing requirements. Rev. 2.5, 16-May-13 2 Document Number: 83514 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

TCLT11. Series CURRENT TRANSFER RATIO (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT V CE = 5 V, = 5 ma TCLT11 CTR 5 6 % TCLT112 CTR 63 125 % V CE = 5 V, = 1 ma TCLT113 CTR 1 2 % TCLT114 CTR 16 32 % TCLT112 CTR 22 45 % I C / V CE = 5 V, = 1 ma TCLT113 CTR 34 7 % TCLT114 CTR 56 1 % TCLT115 CTR 5 15 % TCLT116 CTR 1 3 % V CE = 5 V, = 5 ma TCLT117 CTR 8 16 % TCLT118 CTR 13 26 % TCLT119 CTR 2 4 % SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage - routine test 1 %, t test = 1 s V pd 2. kv Partial discharge test voltage - lot test (sample test) t Tr = 6 s, t test = 1 s, (see figure 2) V IOTM 8 kv V pd 1.68 kv V IO = 5 V R IO 1 12 Insulation resistance V IO = 5 V, T amb = 1 C R IO 1 11 V IO = 5 V, T amb = 15 C (construction test only) R IO 1 9 Forward current I si 13 ma Power dissipation P so 265 mw Rated impulse voltage V IOTM 8 kv Safety temperature T si 15 C Clearance distance 8. mm Creepage distance 8. mm Insulation distance (internal).4 mm Note According to DIN EN 6747-5-2 (VDE 884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. 3 25 2 Phototransistor P so (mw) V IOTM t 1, t 2 = 1 s to 1 s t 3, t 4 = 1 s t test = 1 s t stres = 12 s 15 1 V pd V IOWM V IORM 5 IR-diode I si (ma) 94 9182-2 25 5 75 1 125 T si - Safety Temperature ( C) 15 1393 t 1 t Tr = 6 s t 3 t test t 4 t 2 t stres t Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 6747-5-2 (VDE 884); IEC 6747-5-5 Rev. 2.5, 16-May-13 3 Document Number: 83514 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

TCLT11. Series SWITCHING CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time Rise time Turn-on time Storage time Fall time Turn-off time Turn-on time Turn-off time V S = 5 V, = 1 ma, R L = 1 k, (see figure 4) V S = 5 V, = 1 ma, R L = 1 k, (see figure 4) t d 3. μs t r 3. μs t on 6. μs t s.3 μs t f 4.7 μs t off 5. μs t on 9. μs t off 1. μs R G = 5 Ω + 5 V IC = 2 ma; adjusted through input amplitude I C 1 % 9 % t T =.1 = 5 µs 5 Ω 1 Ω Channel I Channel II Oscilloscope R L = 1 MΩ C L = 2 pf 1 % t r t d t on t s t f t off t 95 184 t d t r t on (= t d + t r ) Pulse duration Delay time Rise time Turn-on time t s t f t off (= t s + t f ) Storage time Fall time Turn-off time 96 11698 Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 5 - Switching Times = 1 ma + 5 V I C R G = 5 Ω T =.1 = 5 µs 5 Ω 1 kω Channel I Channel II Oscilloscope R L 1 MΩ C L 2 pf 95 1843 Fig. 4 - Test Circuit, Saturated Operation Rev. 2.5, 16-May-13 4 Document Number: 83514 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

TCLT11. Series PACKAGE DIMENSIONS in millimeters 2.3 max. 2. 4.1 max. 3.8.1 ±.1 +.3 -.4 1.2 7.5 ±.2.2 + -.1.5.45 ±.1.7 +.3 -.4 2.54 nom. 5 4 3 1.27 nom. Possible footprint 2.54.9 8.2 1.8 22534 1 2 Pin no. 1 identification technical drawings according to DIN specifications PACKAGE MARKING (example) TCLT113 V YWW 68 TAPE AND REEL DIMENSIONS in millimeters ESD sticker 1.75 Ø 1.55 2 4 2.7.3 33 (13") Tape slot in core 16 1.6 7.5 5 Regular, special or bar code label 17999 4.25 8 Direction of pulling out technical drawings according to DIN specification Fig. 6 - Reel Dimensions (3 units per reel) Fig. 7 - Tape Dimensions Ø 1.6 2.3 22662 Rev. 2.5, 16-May-13 5 Document Number: 83514 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91

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