General Description The MDD152 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD152 is suitable device for DC to DC converter and general purpose applications. MDD152 Single N-channel Trench MOSFET 3V, 5.7A, 8.5mΩ Features = 3V = 5.7A @ = 1V R DS(ON) (MAX) < 8.5mΩ @ = 1V < 13.mΩ @ =.5V 1% UIL Tested 1% Rg Tested D MDD152 Single N-Channel Trench MOSFET 3V G S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S 3 V Gate-Source Voltage S ±2 V T C=25 o C 5.7 Continuous Drain Current (1) Power Dissipation T C=7 o C 36.6 T A=25 o C 2. (3) T A=7 o C 16.3 (3) Pulsed Drain Current M 1 A T C=25 o C 31.2 T C=7 o C 2. P D T A=25 o C 6.2 (3) T A=7 o C. (3) Single Pulse Avalanche Energy (2) E AS 7 mj Junction and Storage Temperature Range T J, T stg -55~15 A W o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 2. Thermal Resistance, Junction-to-Case R θjc. o C/W May. 211. Version 1.2 1
Ordering Information Part Number Temp. Range Package Packing Quantity Rohs Status MDD152RH -55~15 o C D-PAK Tape & Reel 3 units Halogen Free Electrical Characteristics (T J =25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25µA, = V 3 - - Gate Threshold Voltage (th) =, = 25µA 1.6 2. 2.7 V Drain Cut-Off Current SS = 3V, = V - - 1 T J=55 o C - - 5 µa Gate Leakage Current I GSS = ±2V, = V - - ±.1 = 1V, = 16A - 7. 8.5 Drain-Source ON Resistance R DS(ON) T J=125 o C - 1.7 12.3 mω =.5V, = 13A - 1.8 13. Forward Transconductance g fs = 5V, = 1A - 25 - S Dynamic Characteristics Total Gate Charge Q g(1v) 1.7 1.3 17.9 Total Gate Charge Q g(.5v) = 15.V, = 16A, 5. 6.7 8. Gate-Source Charge Q gs = 1V - 2.6 - nc Gate-Drain Charge Q gd - 2.3 - Input Capacitance C iss 696 928 116 Reverse Transfer Capacitance C rss = 15.V, = V, f = 1.MHz 68 9 113 pf Output Capacitance C oss 132 176 22 Turn-On Delay Time t d(on) - 7.2 - Rise Time t r = 1V, = 15.V, - 12. - Turn-Off Delay Time t d(off) = 16A, R G = 3.Ω - 22.8 - ns Fall Time t f - 8.1 - Gate Resistance Rg f=1 MHz - 3.5 5. Ω Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V SD I S = 16A, = V -.8 1.1 V Body Diode Reverse Recovery Time t rr I F = 16A, dl/dt = 1A/µs - 2. 3.6 ns Body Diode Reverse Recovery Charge Q rr - 11.9 17.9 nc MDD152 Single N-Channel Trench MOSFET 3V Note : 1. Surface mounted FR- board by JEDEC (jesd51-7) 2. E AS is tested at starting Tj = 25, L =.1mH, I AS = 17.A, V DD = 27V, = 1V. 3. T < 1sec. May. 211. Version 1.2 2
R DS(ON), (Normalized) Drain-Source On-Resistance 3 2 1 1.8 1.6 1. 1.2 1..8 = 1V 5.V.V.5V 3.5V..5 1. 1.5 2. 2.5 3., Drain-Source Voltage [V] Fig.1 On-Region Characteristics 1. = 1 V 2. = 16. A 3.V Drain-Source On-Resistance [mω] R DS(ON) [mω ], Drain-Source On-Resistance 16 12 8 1 8 6 2 =.5V = 1V 5 1 15 2 25 3 35 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage T A = 25 = 16.A MDD152 Single N-Channel Trench MOSFET 3V.6-5 -25 25 5 75 1 125 15 T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature 2 3 5 6 7 8 9 1, Gate to Source Volatge [V] Fig. On-Resistance Variation with Gate to Source Voltage 16 12 8 = 5V T A =25 R, Reverse Drain Current [A] 1 1 1 1-1 = V T A =25 1 2 3 5, Gate-Source Voltage [V] Fig.5 Transfer Characteristics.3..5.6.7.8.9 1. 1.1 V SD, Source-Drain voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature May. 211. Version 1.2 3
, Gate-Source Voltage [V] 1 1 2 1 1 1 8 6 2 Note : I = 16A D = 15V 8 12 16 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics Operation in This Area is Limited by R DS(on) DC 1s 1s 1 ms 1 ms Capacitance [pf] 12 9 6 3 6 5 3 2 C rss C oss C iss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 5 1 15 2 25 3, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics Notes ; 1. = V 2. f = 1 MHz MDD152 Single N-Channel Trench MOSFET 3V 1-1 Single Pulse T J =Max rated T C =25 1-1 1 1 1 1 2, Drain-Source Voltage [V] 1 25 5 75 1 125 15 T A, Case Temperature [ ] Fig.9 Maximum Safe Operating Area Fig.1 Maximum Drain Current vs. Case Temperature 1 1 D=.5 Z θ JA (t), Thermal Response.2 1.1.5 1-1 1-2.2.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C 1-3 1-1 -3 1-2 1-1 1 1 1 1 2 1 3 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve May. 211. Version 1.2
Package Dimension D-PAK (TO-252) Dimensions are in millimeters, unless otherwise specified MDD152 Single N-Channel Trench MOSFET 3V May. 211. Version 1.2 5
MDD152 Single N-Channel Trench MOSFET 3V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. May. 211. Version 1.2 6