FS6679AZ P-Channel PowerTrench MOSFET -3V, -3A, 9mΩ General escription This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features March 9 Max r S(on) = 9.3mΩ at V GS = -V, I = -3A Max r S(on) =.8mΩ at V GS = -.5V, I = -A Extended V GS range (-5V) for battery applications HBM ES protection level of 6kV typical (note 3) tm High performance trench technology for extremely low r S(on) High power and current handing capability RoHS Compliant 5 6 3 SO-8 S G S S 7 8 MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage -3 V V GS Gate to Source Voltage ±5 V rain Current -Continuous (Note a) -3 I -Pulsed -65 A P (Note b). W Power issipation for Single Operation (Note a).5 (Note c). T J, T STG Operating and Storage Temperature -55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction to Ambient (Note a) 5 C/W R θjc Thermal Resistance, Junction to Case (Note ) 5 C/W Package Marking and Ordering Information evice Marking evice Reel Size Tape Width Quantity FS6679AZ FS6679AZ 3 mm 5 units
Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VSS rain to Source Breakdown Voltage I = -5µA, V GS = V -3 V B VSS Breakdown Voltage Temperature I = -5µA, referenced to T J Coefficient 5 C - mv/ C I SS Zero Gate Voltage rain Current V S = -V, V GS =V - µa I GSS Gate to Source Leakage Current V GS = ±5V, V S =V ± µa On Characteristics (Note ) V GS(th) Gate to Source Threshold Voltage V GS = V S, I = -5µA - -.9-3 V V GS(th) Gate to Source Threshold Voltage I = -5µA, referenced to T J Temperature Coefficient 5 C 6.5 mv/ C V GS = -V, I = -3A 7.7 9.3 V r S(on) rain to Source On Resistance GS = -.5V, I = -A.8.8 mω V GS = -V, I = -3A,.7 3. T J = 5 C g FS Forward Transconductance V S = -5V, I = -3A 55 S ynamic Characteristics C iss Input Capacitance 89 385 pf V S = -5V, V GS = V, C oss Output Capacitance 5 665 pf f = MHz C rss Reverse Transfer Capacitance 95 75 pf Switching Characteristics (Note ) t d(on) Turn-On elay Time 3 ns t V = -5V, I = -A r Rise Time 5 7 ns V GS = -V, R GS = 6Ω t d(off) Turn-Off elay Time 336 ns t f Fall Time 9 8 ns V Q g Total Gate Charge S = -5V, V GS = -V, 68 96 nc I = -3A Q g Total Gate Charge 38 5 nc V S = -5V, V GS = -5V, Q gs Gate to Source Gate Charge nc I = -3A Q gd Gate to rain Charge 7 nc rain-source iode Characteristic V S Source to rain iode Forward Voltage V GS = V, I S = -.A -.7 -. V t rr Reverse Recovery Time I F = -3A, di/dt = A/µs ns Q rr Reverse Recovery Charge I F = -3A, di/dt = A/µs -3 nc Notes: : R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user s board design. a) 5 C/W when mounted on a in pad of oz copper b)5 C/W when c) 5 C/W when mounted on a. in mounted on a pad of oz copper minimun pad Scale : on letter size paper : Pulse Test:Pulse Width <3µs, uty Cycle <.% 3: The diode connected between the gate and source serves only as protection against ES. No gate overvoltage rating is implied.
Typical Characteristics T J = 5 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE 7 6 5 3 V GS = - V PULSE URATION = 8µs UTY CYCLE =.5%MAX V GS = - 5V V GS = -.5V V GS = - V V GS = - 3.5V 3 -V S, RAIN TO SOURCE VOLTAGE (V) Figure. On Region Characteristics.6....8 I = -3A V GS = -V V GS = - 3V.6-8 - 8 6 T J, JUNCTION TEMPERATURE ( o C) NORMALIZE RAIN TO SOURCE ON-RESISTANCE r S(on), RAIN TO SOURCE. 3.5 3..5. V GS = - 3.5V PULSE URATION = 8µs UTY CYCLE =.5%MAX V GS = - V.5 V GS = - 5V. V GS = - V.5 3 5 6 7 -I, RAIN CURRENT(A) V GS = -.5V Figure. Normalized On-Resistance vs rain Current and Gate Voltage ON-RESISTANCE (mω) 3 I = -3A PULSE URATION = 8µs UTY CYCLE =.5%MAX T J = 5 o C 3..5 6. 7.5 9. -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure. On-Resistance vs Gate to Source Voltage -I, RAIN CURRENT (A) 7 6 5 3 PULSE URATION = 8µs UTY CYCLE =.5%MAX T J = 5 o C T J = -55 o C..5 3. 3.5..5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -IS, REVERSE RAIN CURRENT (A).. V GS = V T J = 5 o C T J = -55 o C E-3....6.8... -V S, BOY IOE FORWAR VOLTAGE (V) Figure 6. Source to rain iode Forward Voltage vs Source Current 3
Typical Characteristics T J = 5 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -Ig(uA) 8 6 5 3 5 6 75 Q g, GATE CHARGE(nC) E-3 Figure 7... V = -V V = -V V = -5V CAPACITANCE (pf) f = MHz V GS = V. -V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage T J = 5 o C -IAS, AVALANCHE CURRENT(A) C rss C oss C iss 3 E- 5 5 5 3 35 -V GS (V) - - t AV, TIME IN AVALANCHE(ms) Figure 9. I g vs V GS Figure. Unclamped Inductive Switching Capability 6 us -I, RAIN CURRENT (A) 8 6 V GS = -.5V V GS = -V 5 5 75 5 5 T A, AMBIENT TEMPERATURE ( o C) I, RAIN CURRENT (A) ms ms THIS AREA IS LIMITE BY r S(on) ms. SINGLE PULSE s T J = MAX RATE s R θja = 5 o C/W C T A = 5 o C... V S, RAIN to SOURCE VOLTAGE (V) Figure. Maximum Continuous rain Current vs Ambient Temperature Figure. Forward Bias Safe Operating Area
Typical Characteristics T J = 5 C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) NORMALIZE THERMAL IMPEANCE, Z θja 3 SINGLE PULSE R θja = 5 o C/W T A = 5 o C.5 - -3 - - 3 t, PULSE WITH (sec) - - -3 - Figure 3. UTY CYCLE-ESCENING ORER =.5...5.. SINGLE PULSE R θja = 5 o C/W Single Pulse Maximum Power issipation V GS = - V - -3 - - 3 t, RECTANGULAR PULSE URATION (sec) P M t t NOTES: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A Figure. Junction-to-Ambient Transient Thermal Response Curve 5
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