FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mω Features R DS(on) = 28 mω (Typ. ) @ V GS = 0 V, I D = 38 A Ultra Low Gate Charge (Typ. Q g = 28 nc) Low Effective Output Capacitance (Typ. C oss(eff.) = 94 pf) 00% Avalanche Tested RoHS Compliant Application Solar Inverter AC-DC Power Supply Description Sept 207 The SupreMOS MOSFET is ON Semiconductor s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G D S TO-3PN MOSFET Maximum Ratings T C = 25 o C unless otherwise noted. S Symbol Parameter FCA76N60N Unit V DSS Drain to Source Voltage 600 V V GSS Gate to Source Voltage ±30 V I D Drain Current - Continuous (T C = 25 o C) 76 - Continuous (T C = 00 o C) 48. A I DM Drain Current - Pulsed (Note ) 228 A E AS Single Pulsed Avalanche Energy (Note 2) 8022 mj I AR Avalanche Current (Note ) 76 A E AR Repetitive Avalanche Energy (Note ) 5.40 mj dv/dt MOSFET dv/dt Ruggedness (Note 3) 00 Peak Diode Recovery dv/dt 2 V/ns P D Power Dissipation (T C = 25 o C) 543 W - Derate Above 25 o C 5.40 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering, /8 from Case for 5 Seconds 300 o C Thermal Characteristics Symbol Parameter FCA76N60N Unit R θjc Thermal Resistance, Junction to Case, Max. 0.23 o C/W R θja Thermal Resistance, Junction to Ambient, Max. 40 200 Semiconductor Components Industries, LLC. FCA76N60N Rev.
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCA76N60N FCA76N60N TO-3PN Tube N/A N/A 30 units Electrical Characteristics T C = 25 o C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = ma, V GS = 0 V,T J = 25 o C 600 - - V ΔBV DSS Breakdown Voltage Temperature I / ΔT J Coefficient D = ma, Referenced to 25 o C - 0.73 - V/ o C V DS = 480 V, V GS = 0 V - - 0 I DSS Zero Gate Voltage Drain Current μa V DS = 480 V, T J = 25 o C - - 00 I GSS Gate to Body Leakage Current V GS = ±30 V, V DS = 0 V - - ±00 na On Characteristics V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250 μa 2.0-4.0 V R DS(on) Static Drain to Source On Resistance V GS = 0 V, I D = 38 A - 28.5 36.0 mω g FS Forward Transconductance V DS = 20 V, I D = 38 A - 88 - S Dynamic Characteristics C iss Input Capacitance - 930 2385 pf V DS = 00 V, V GS = 0 V, C oss Output Capacitance - 370 495 pf f = MHz C rss Reverse Transfer Capacitance - 3. 5.0 pf C oss Output Capacitance V DS = 380 V, V GS = 0 V, f = MHz - 96 - pf C oss(eff.) Effective Output Capacitance V DS = 0 V to 380 V, V GS = 0 V - 94 - pf Q g(tot) Total Gate Charge at 0V - 28 285 nc Q gs Gate to Source Gate Charge V DS = 380 V, I D = 38 A, - 39 - nc Q gd Gate to Drain Miller Charge V GS = 0 V (Note 4) - 66 - nc ESR Equivalent Series Resistance (G-S) f = MHz -.0 - Ω Switching Characteristics t d(on) Turn-On Delay Time - 34 78 ns t r Turn-On Rise Time V DD = 380 V, I D = 38 A, - 24 58 ns t d(off) Turn-Off Delay Time V GS = 0 V, R G = 4.7 Ω - 235 480 ns t f Turn-Off Fall Time (Note 4) - 32 74 ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 76 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 228 A V SD Drain to Source Diode Forward Voltage V GS = 0 V, I SD = 38 A - -.2 V t rr Reverse Recovery Time V GS = 0 V, I SD = 38 A, - 63 - ns Q rr Reverse Recovery Charge di F /dt = 00 A/μs - 6 - μc Notes:. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I AS = 25.3 A, R G = 25 Ω, starting T J = 25 C. 3. I SD 76 A, di/dt 200 A/μs, V DD 380 V, starting T J = 25 C. 4. Essentially independent of operating temperature typical characteristics. 200 Semiconductor Components Industries, LLC. FCA76N60N Rev. 2
Typical Performance Characteristics ID, Drain Current[A] Figure. On-Region Characteristics 000 00 0 V GS = 5.0 V 0.0 V 6.0 V 5.5 V 5.0 V 4.5 V. 250μs Pulse Test 2. T C = 25 o C 0. 0 20 V DS, Drain-Source Voltage[V] Figure 2. Transfer Characteristics. V DS = 20V 2. 250μs Pulse Test 2 4 6 8 V GS, Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 50 ID, Drain Current[A] 000 00 0 000 50 o C -55 o C 25 o C RDS(ON) [mω], Drain-Source On-Resistance 45 40 35 30 V GS = 0V V GS = 20V T C = 25 o C 25 0 50 00 50 200 250 300 I D, Drain Current [A] Figure 5. Capacitance Characteristics 00000 IS, Reverse Drain Current [A] 00 0 50 o C 25 o C. V GS = 0V 2. 250μs Pulse Test 0.2 0.4 0.6 0.8.0.2.4 V SD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 0 Capacitances [pf] 0000 000 C iss C oss 00. V GS = 0V 2. f = MHz 0 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + C Cgd rss Crss = Cgd 0. 0 00 600 V DS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] V DS = 20V 8 V DS = 300V 6 V DS = 480V 4 2 I D = 38A 0 0 40 80 20 60 200 240 Q g, Total Gate Charge [nc] 200 Semiconductor Components Industries, LLC. FCA76N60N Rev. 3
Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BVDSS, [Normalized] Drain-Source Breakdown Voltage.2..0 0.9. V GS = 0V 2. I D = ma 0.8-80 -40 0 40 80 20 60 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 500 RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0.5.0 0.5. V GS = 0V 2. I D = 38A 0.0-80 -40 0 40 80 20 60 T J, Junction Temperature [ o C] Figure 0. Maximum Drain Current vs. Case Temperature 80 ID, Drain Current [A] 00 0 0. Operation in This Area is Limited by R DS(on). T C = 25 o C 30μs 00μs ms 0ms DC ID, Drain Current [A] 60 40 20 0.0 2. T J = 50 o C 3. Single Pulse 0 00 000 V DS, Drain-Source Voltage [V] 0 25 50 75 00 25 50 T C, Case Temperature [ o C] Figure. Transient Thermal Response Curve Z θjc (t), Thermal Response [ Thermal Response [Z o C/W] θjc ] 0. 0.5 0.2 0. 0.05 0.0 0.02 0.0. Z θjc (t) = 0.23 o C/W Max. Single pulse 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) 0.005 0-5 0-4 0-3 0-2 0-0 0 0 0 2 t, Rectangular Pulse Pulse Duration Duration [sec] [sec] P DM t t 2 200 Semiconductor Components Industries, LLC. FCA76N60N Rev. 4
I G = const. Figure 2. Gate Charge Test Circuit & Waveform V DS R L V DS 90% R G V GS V DD V 0V GS DUT 0% V GS t d(on) t r t d(off) tf t on t off Figure 3. Resistive Switching Test Circuit & Waveforms V GS Figure 4. Unclamped Inductive Switching Test Circuit & Waveforms 200 Semiconductor Components Industries, LLC. FCA76N60N Rev. 5
V GS R G DUT I SD Driver + V DS _ L Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 0V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms 200 Semiconductor Components Industries, LLC. FCA76N60N Rev. 6
Mechanical Dimensions Figure 6. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering our components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of our worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. Always visit ON Semiconductor s online packaging area for the most recent package drawings. 200 Semiconductor Components Industries, LLC. FCA76N60N Rev. 7
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