MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth Product TO2 Compact Package These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS CollectorEmitter Voltage MJE1528G, MJE1529G MJE15G, MJE151G CollectorBase Voltage MJE1528G, MJE1529G MJE15G, MJE151G Rating Symbol Value Unit V CEO 1 15 V CB 1 15 EmitterBase Voltage V EB 5. Collector Current Continuous I C 8. Adc Collector Current Peak I CM 16 Adc Base Current I B 2. Adc Total Device Dissipation @ T C = 25 C Derate above 25 C Total Device Dissipation @ T A = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D 5.4 P D 2..16 W W/ C W W/ C T J, T stg 65 to +15 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 115 VOLTS, 5 WATTS 1 BASE PNP 1 2 COLLECTOR 2,4 EMITTER 4 1 BASE TO2 CASE 221A STYLE 1 MARKING DIAGRAM NPN COLLECTOR 2,4 EMITTER THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 2.5 C/W Thermal Resistance, JunctiontoAmbient R JA 62.5 C/W MJE15xxG AY WW MJE15xx A Y WW G = Device Code x = 28, 29,, or 1 = Assembly Location = Year = Work Week = PbFree Package *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 14 November, 14 Rev. 7 1 Publication Order Number: MJE1528/D
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) (I C = madc, I B = ) MJE1528, MJE1529 MJE15, MJE151 Collector Cutoff Current (V CE = 1, I B = ) MJE1528, MJE1529 (V CE = 15, I B = ) MJE15, MJE151 Collector Cutoff Current (V CB = 1, I E = ) MJE1528, MJE1529 (V CB = 15, I E = ) MJE15, MJE151 Emitter Cutoff Current (V BE = 5., I C = ) V CEO(sus) I CEO I CBO 1 15 I EBO madc Adc Adc ON CHARACTERISTICS (Note 1) DC Current Gain (I C = Adc, V CE = 2. ) (I C = 2. Adc, V CE = 2. ) (I C =. Adc, V CE = 2. ) (I C = 4. Adc, V CE = 2. ) h FE 4 4 4 DC Current Gain Linearity (V CE From 2. V to V, I C From A to A) (NPN to PNP) h FE Typ 2 CollectorEmitter Saturation Voltage (I C = Adc, I B = Adc) BaseEmitter On Voltage (I C = Adc, V CE = 2. ) V CE(sat).5 V BE(on) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 2) (I C = 5 madc, V CE =, f test = MHz) f T Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width s, Duty Cycle 2.%. 2. f T = h fe f test. MHz T A T C PD, POWER DISSIPATION (WATTS). 2. 6 4 T A T C 4 6 8 1 14 16 T, TEMPERATURE ( C) Figure 1. Power Derating 2
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED).7.5..2 D =.5.2 P Z JC(t) = r(t) R (pk) JC.7.5 R JC = 1.56 C/W MAX.5 D CURVES APPLY FOR POWER.2 PULSE TRAIN SHOWN. t 1 READ TIME AT t 1 t.2 2.1 T J(pk) - T C = P (pk) Z JC(t) SINGLE PULSE DUTY CYCLE, D = t 1 /t 2.1.1.2.5.2.5 2. 5. 5 5 k t, TIME (ms) Figure 2. Thermal Response IC, COLLECTOR CURRENT (AMP) 16.2 2. BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED @ T C = 25 C 5. 5 1 15 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure. Forward Bias Safe Operating Area dc s 5 ms MJE1528 MJE1529 MJE15 MJE151 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures and 4 is based on T J(pk) = 15 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) < 15 C. T J(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 8. 5.. 2. I C /I B = T C = 25 C V BE(off) = 9 V 5 V V 1.5 V V 1 1 1 14 15 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) C, CAPACITANCE (pf) 5 5 1.5. C ib (NPN) C ib (PNP) C ob (PNP) C ob (NPN) 5. 7. 5 15 V R, REVERSE VOLTAGE (VOLTS) Figure 4. ReverseBias Switching Safe Operating Area Figure 5. Capacitances
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) hfe, SMALL SIGNAL CURRENT GAIN 5 V CE = V I C =.5 A T C = 25 C NPN PNP 5..5.7 2.. 5. 7. f, FREQUENCY (MHz) Figure 6. SmallSignal Current Gain ft, CURRENT GAIN-BANDWIDTH PRODUCT (MHz) 9 (PNP) (NPN) 6 5.2.5 2. 5. Figure 7. Current GainBandwidth Product NPN MJE1528 MJE15 PNP MJE1529 MJE151 1K 5 V CE = 2. V 1K 5 V CE = 2 V hfe, DC CURRENT GAIN 15 7 5 T J = 15 C T J = - 55 C hfe, DC CURRENT GAIN 5 T J = 15 C T J = - 55 C.2.5 2. 5..2.5 2. 5. Figure 8. DC Current Gain NPN PNP V, VOLTAGE (VOLTS) 1.6 1.2.6.2 V BE(sat) @ I C /I B = V, VOLTAGE (VOLTS) 1.8 1.4.8 V BE(on) @ V CE = 2. V V BE(on) @ V CE = 2. V.4 V CE(sat) = I C /I B = V CE(sat) = I C /I B = I C /I B = I C /I B =.2.5 2. 5..2.5 2. 5. Figure 9. On Voltage V BE(sat) @ I C /I B = 4
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) t, TIME ( s) μ.5.2.5 t r (PNP) V CC = 8 V I C /I B = t d (NPN, PNP) t, TIME ( s) μ 5.. 2..5 t f (PNP) t s (PNP) V CC = 8 V I C /I B =, I B1 = I B2 t s (NPN)..2 t r (NPN).2 t f (NPN).1.2.5 2. 5..2..5 2. 5. Figure. TurnOn Times Figure 11. TurnOff Times ORDERING INFORMATION Device Package Shipping MJE1528G MJE1529G MJE15G MJE151G TO2 (PbFree) TO2 (PbFree) TO2 (PbFree) TO2 (PbFree) 5 Units / Rail 5 Units / Rail 5 Units / Rail 5 Units / Rail 5
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) PACKAGE DIMENSIONS TO2 CASE 221A9 ISSUE AH H Q Z L V G B 4 1 2 N D A K F T U S R J C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.57.6 14.48 15.75 B.8.415 9.66.5 C 6 9 4.7 4.8 D.25.8.64.96 F 42 61.61 4.9 G.95.5 2.42 2.66 H 61 2.8 4. J.14.24.6.61 K.5.562 12.7 14.27 L.45.6 1.15 1.52 N 9.2 4.8 5. Q. 2.54.4 R.8 2.4 2.79 S.45.55 1.15 1.9 T.25.255 5.97 6.47 U..5. 1.27 V.45 --- 1.15 --- Z ---.8 --- 2.4 STYLE 1: PIN 1. BASE 2. COLLECTOR. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 516, Denver, Colorado 8217 USA Phone: 6752175 or 84486 Toll Free USA/Canada Fax: 6752176 or 844867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 79 29 Japan Customer Focus Center Phone: 8158175 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE1528/D