SCS205KG SiC Schottky Barrier Diode

Similar documents
SCS220AE2 SiC Schottky Barrier Diode

TO-247. Inner circuit. Type

Outline TO-220ACP. Inner Circuit. Construction Silicon carbide epitaxial planar type. Type

Outline TO-220AC. Symbol V RM I FSM I FRM P D. Tstg

Outline LPT(L) <TO-263AB> Inner circuit. DC/DC Converter Reel size (mm) 330

SCS220AM SiC Schottky Barrier Diode

SCS208AJ SiC Schottky Barrier Diode

SCS220AJHR SiC Schottky Barrier Diode

SCS208AJ SiC Schottky Barrier Diode

SCS210AJ SiC Schottky Barrier Diode

SCS240AE2HR SiC Schottky Barrier Diode

SCS220AE2HR SiC Schottky Barrier Diode

SCT3080AL N-channel SiC power MOSFET

SCT3017AL N-channel SiC power MOSFET

SCT3030KL N-channel SiC power MOSFET

Nch 600V 4A Power MOSFET Outline Features Inner circuit Packaging specifications Application Absolute maximum ratings Rev.

SCT3030AL N-channel SiC power MOSFET

SCT3040KL N-channel SiC power MOSFET

SCT3030AL N-channel SiC power MOSFET

SCT2080KE N-channel SiC power MOSFET

SCT3120AL N-channel SiC power MOSFET

SCT3105KL N-channel SiC power MOSFET

RGW00TK65 650V 50A Field Stop Trench IGBT

R6020ENX 600V 0.20W. R DS(on) (Max.) 20A 50W. Nch 600V 20A Power MOSFET. Data Sheet. Outline. Inner circuit 1) Low on-resistance.

RGTH80TS65 650V 40A Field Stop Trench IGBT

SCT3030KL N-channel SiC power MOSFET

RGTVX6TS65 650V 80A Field Stop Trench IGBT

SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD

SCT3080KL N-channel SiC power MOSFET

RGCL60TK60 Data Sheet

SCT2H12NZ N-channel SiC power MOSFET

SCT3040KL N-channel SiC power MOSFET

SCT3060AL N-channel SiC power MOSFET

SCT3060AL N-channel SiC power MOSFET

RGTH60TS65D 650V 30A Field Stop Trench IGBT

SCT2750NY N-channel SiC power MOSFET

RGPR30NS40HR 400V 30A Ignition IGBT

RGTV00TS65D 650V 50A Field Stop Trench IGBT

RGT00TS65D 650V 50A Field Stop Trench IGBT

RGT30NS65D 650V 15A Field Stop Trench IGBT

Outline. Inner circuit. Application Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 360 Taping code

Outline. Inner circuit. Application Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 450 Taping code

RGCL80TK60D Data Sheet

RGS00TS65D 650V 50A Field Stop Trench IGBT

RGT00TS65D 650V 50A Field Stop Trench IGBT

RGT8BM65D 650V 4A Field Stop Trench IGBT

RGPZ10BM40FH 430V 20A Ignition IGBT

Schottky Barrier Diode RSX501L-20

SCT2080KE N-channel SiC power MOSFET

S4103 N-channel SiC power MOSFET bare die

SCT2450KE N-channel SiC power MOSFET

Schottky Barrier Diode RB088BM150

S4108 N-channel SiC power MOSFET bare die

SCT2120AF N-channel SiC power MOSFET

S2307 N-channel SiC power MOSFET bare die

S2301 N-channel SiC power MOSFET bare die

RCX450N20 V DSS 200V 45A 40W. Nch 200V 45A Power MOSFET. Datasheet. Outline. Inner circuit. Features 1) Low on-resistance. 2) Fast switching speed.

SCT2450KE N-channel SiC power MOSFET

Infrared light emitting diode, top view type

Schottky Barrier Diode

Transmission type Photointerrupters Eco-Friendly type

RCD080N25 V DSS 250V 8A 20W. Nch 250V 8A Power MOSFET. Data Sheet. Outline. Inner circuit. Features 1) Low on-resistance. 2) Fast switching speed.

Surface mount type photo diode (Topview) RPMD-0100

Infrared light emitting diode, top view type

Infrared light emitting diode, side-view type

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC

Infrared light emitting diode, top view type

Schottky Barrier Diode

Taping code. Reel size (mm) 2SCR512P MPT T ,000 NB

Taping code. Reel size (mm) 2SC5824 MPT T ,000 UP

Switching Diode 1SS355. Datasheet. Application Dimensions (Unit : mm) Land size figure (Unit : mm) High speed switching

Outline CPT3. Base. Taping code. Reel size (mm) 2SC5103 CPT TL ,500 C5103

Photointerrupter, Small type

Single Digit Surface Mount LED Numeric Display

Reflective photosensor (photoreflector)

Zener Diode YFZVFH series

Outline. Inner circuit. DC/DC converters Tape width (mm) 10 Type Load Switch Basic ordering unit (pcs) 3,000 Taping code

High efficiency, two-digit numeric displays

Single Digit LED Numeric Display

Reflective photosensor (photoreflector)

Outline TUMT3. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000

1.3± ± ± ± ± ROHM : TUMD2 dot (year week factory) + day EX. TDZ5.1B. Taping specifications (Unit : mm)

Surface Mount High Output Infared LEDs

Single Digit LED Numeric Display

Single Digit LED Numeric Display

High efficiency, two-digit numeric displays

Outline (SC-63) <SOT-428> Inner circuit. (1) Gate (2) Drain (3) Source (1) Parameter Symbol Value Unit I D E AS *3 P D 20 W P D 0.

Single Digit LED Numeric Display

Single Digit LED Numeric Display

Dimensions (Unit : mm) 2SB EIAJ : SC-62 (3) Emitter Abbreviated symbol: BA

Single Digit LED Numeric Display

Phototransistor, top view type

2SB1275 V CEO -160V I C -1.5A. Datasheet. PNP -1.5A -160V Middle Power Transistor. Outline Parameter Value CPT3. Features

New Designs. Not Recommended for 2SC5001 V CEO I C 20V 10A. Datasheet. NPN 10A 20V Middle Power Transistor. Outline Parameter Value CPT3

Phototransistor, side view type

QST3 V CEO -30V I C -5A. Datasheet. PNP -5A -30V Middle Power Transistor. Outline

Single Digit LED Numeric Display

2SA1834 V CEO -20V I C -10A. Datasheet. PNP -10A -20V Middle Power Transistor. Outline. Parameter Value CPT3. Features

New Designs. Not Recommended for 2SB1698 V CEO -30V -1.5A I C. Datasheet. PNP -1.5A -30V Middle Power Transistor. Outline

Double Digits High Brightness, LED Numeric Display

Transcription:

SCS2KG SiC Schottky Barrier Diode Outline R 2 TO22C () I F Q C 7nC (3) (2) Features Inner circuit ) Shorter recovery time () 2) Reduced temperature dependence 3) Highspeed switching possible () Cathode (2) Cathode (3) node (2) (3) pplications PFC Boost Topology Secondary Side Rectification Packaging specifications Packaging Reel size (mm) Tube Data Center P Power Conditioners Type Tape width (mm) Basic ordering unit (pcs) Packing code Marking C SCS2KG bsolute maximum ratings (T j = 2 C) Parameter Symbol alue Reverse voltage (repetitive peak) RM 2 Reverse voltage (DC) R 2 Continuous forward current (T c = C) I F Surge nonrepetitive forward current PW=ms sinusoidal, T j =2 C PW=ms sinusoidal, T j = C PW= s square, T j =2 C I FSM 23 7 8 Repetitive peak forward current I FRM 27 * i 2 t value PW=ms, T j =2 C PW=ms, T j = C i 2 dt 2..4 2 s 2 s Total power dissipation P D 88 * 2 W Junction temperature T j 7 C Range of storage temperature T stg to 7 C * T c = C, T j = C, Duty cycle=% *2 T c =2 C 28 ROHM Co., Ltd. ll rights reserved. TSZ22 4 / TSQ22SCS2KG 9.May.28 Rev.2

SCS2KG Electrical characteristics (T j = 2 C) Parameter Symbol Conditions Min. alues Typ. Max. DC blocking voltage DC I R =.m 2 I F =,T j =2 C.4.6 Forward voltage F I F =,T j = C.8 I F =,T j =7 C.9 R =2,T j =2 C Reverse current I R R =2,T j = C 4 R =2,T j =7 C 6 Total capacitance C R =,f=mhz R =8,f=MHz 26 2 pf pf Total capacitive charge Q C R =8,di/dt=/ s 7 nc Switching time t C R =8,di/dt=/ s ns Thermal characteristics Parameter Symbol Conditions alues Min. Typ. Max. Thermal resistance R th(jc)..7 C/W Typical Transient Thermal Characteristics Symbol alue Symbol alue R th 3.6E C th 2.49E3 R th2 9.33E K/W C th2 4.92E3 Ws/K R th3 2.62E C th3 9.7E2 T j R th R th,n T c PD C th C th2 C th,n T a 28 ROHM Co., Ltd. ll rights reserved. TSZ22 2/ TSQ22SCS2KG 9.May.28 Rev.2

SCS2KG Electrical characteristic curves Fig. F I F Characteristics Fig.2 F I F Characteristics Pulsed 7 Pulsed T a = 2ºC 6 Forward Current : I F []. T a = 2ºC T. a =7ºC T a =2ºC T a =7ºC..... 2. 2. Forward Current : I F [] 4 T a =7ºC T a =2ºC 3 T a =7ºC 2.... 2. 2. Forward oltage : F [] Forward oltage : F [] Fig.3 R I R Characteristics Fig.4 R C t Characteristics Reverse Current : I R [ ]... T a =7ºC T a =2ºC T a =7ºC T a = 2ºC Capacitance Between Terminals : C t [pf] f=mhz.. Reverse oltage : R [] Reverse oltage : R [] 28 ROHM Co., Ltd. ll rights reserved. TSZ22 3/ TSQ22SCS2KG 9.May.28 Rev.2

SCS2KG Electrical characteristic curves Transient Thermal Resistance : R th(jc) [ºC/W] Fig. Typical Transient Thermal Resistance vs. Pulse Width. Single Pulse..E4.E3.E2.E.E+.E+.E+2.E+3 Pulse Width : PW [s] Power Dissipation [W] Fig.6 Power Dissipation 9 8 7 6 4 3 2 2 7 2 7 Case Temperature : T c [ºC] 7 Fig.7* 3 Maximum peak forward current derating curve I P T c 7 Fig.8* 4 Typical peak forward current derating curve I P T c (Not guaranteed) 6 6 Duty=. Peak Forward Current : I P [] 4 3 2 Duty=.2 Duty=. Duty=. Duty=.8 D.C. 2 7 2 7 Peak Forward Current : I P [] 4 3 2 Duty=.2 Duty=. Duty=.8 D.C. 2 7 2 7 Case Temperature : T c [ºC] Case Temperature : T c [ºC] *3 Based on max f, max R th(jc) alid for switching of above khz, excluding D.C. curve. *4 Based on typ f, typ R th(jc) Typical value, not guaranteed alid for switching of above khz, excluding D.C. curve 28 ROHM Co., Ltd. ll rights reserved. TSZ22 4/ TSQ22SCS2KG 9.May.28 Rev.2

SCS2KG Electrical characteristic curves Surge nonrepetitive forward current : I FSM [] Fig.9 Surge nonrepetitive forward current vs. Pulse width (Sinusoidal waveform) Single Pulse.E.E4.E3.E2 Capacitance stored energy : E C [ J] Fig. Typical capacitance store energy 9 8 7 6 4 3 2 2 4 6 8 Pulse Width : PW [s] Reverse oltage : R [] Symplified forward characteristic model Fig. Equivalent forward current curve F = th + R diff I F th ( T j ) = a + a T j R diff ( T j ) = b + b T j + b 2 T j 2 Forward Current : I F th /R diff Symbol a a b Typical alue 9.93E.27E3 7.3E2 / C b 4.2E4 / C b 2 2.66E6 / C 2 Forward oltage : F T j in ºC; ºC < T j < ºC ; I F < 28 ROHM Co., Ltd. ll rights reserved. TSZ22 / TSQ22SCS2KG 9.May.28 Rev.2

Notice Notes ) 2) 3) 4) ) 6) 7) 8) 9) ) ) 2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : lthough ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and failsafe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from noncompliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is errorfree, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting noncompliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export dministration Regulations and the Foreign Exchange and Foreign Trade ct. 3) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/ 2 ROHM Co., Ltd. ll rights reserved. R2S