AND8289. LED Driving with NCP/V3063

Similar documents
AND8298. High Intensity LED Drivers Using NCP3065/NCV3065

AND8298. High Intensity LED Drivers Using NCP3065/NCV3065

NCP30653ABCKGEVB, NCP3065SOBCKGEVB, NCP3065SOBSTGEVB. High Intensity LED Drivers Using NCP3065/NCV3065 Evaluation Board User's Manual

AND8285/D. NCP1521B Adjustable Output Voltage Step Down Converter Simulation Procedure SIMULATION NOTE

1. DEFINE THE SPECIFICATION 2. SELECT A TOPOLOGY

AND9043/D. An Off-Line, Power Factor Corrected, Buck-Boost Converter for Low Power LED Applications APPLICATION NOTE.

AND8312/D. A 36W Ballast Application with the NCP5104

AND8291/D. >85% Efficient 12 to 5 VDC Buck Converter

CAT4237EVAL2EVB. CAT4237 High Voltage White LED Driver Evaluation Board User's Manual EVAL BOARD USER S MANUAL

CAT4238AEVB. CAT LED Boost Converter Evaluation Board User's Manual EVAL BOARD USER S MANUAL.

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator

1 A Constant-Current LED Driver with PWM Dimming

NCL30000LED2GEVB/D Vac up to 15 Watt Dimmable LED Driver Demo Board Operation EVALUATION BOARD MANUAL

AND8295/D. A 36W Ballast Application with the NCP5106B

NCP5425DEMO/D. NCP5425 Demonstration Board Note. Single Input to Dual Output Buck Regulator 5.0 V to 1.5 V/15 A and 1.8 V/15 A DEMONSTRATION NOTE

Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features

MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS

NCP59302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series

AND8450/D. NCV7680 LED Driver Linear Regulator Performance APPLICATION NOTE

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142

MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

MUN5311DW1T1G Series.

Is Now Part of To learn more about ON Semiconductor, please visit our website at

MBRA320T3G Surface Mount Schottky Power Rectifier

DEMONSTRATION NOTE. Figure 1. CS51411/3 Demonstration Board. 1 Publication Order Number: CS51411DEMO/D

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

AND9100/D. Paralleling of IGBTs APPLICATION NOTE. Isothermal point

Overview The LA5744MP is a separately-excited step-down switching regulator (variable type).

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

NTR4170NT3G. Power MOSFET. 30 V, 3.1 A, Single N Channel, SOT 23

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual

NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.

NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.

MBR60H100CTG. SWITCHMODE Power Rectifier 100 V, 60 A SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MBRA320T3G Surface Mount Schottky Power Rectifier

CMPWR ma SmartOR Regulator with V AUX Switch

Is Now Part of To learn more about ON Semiconductor, please visit our website at

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88

MJD44H11 (NPN) MJD45H11 (PNP)

NCP57302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator

SN74LS122, SN74LS123. Retriggerable Monostable Multivibrators LOW POWER SCHOTTKY

NTMFS5C604NL. Power MOSFET. 60 V, 1.2 m, 276 A, Single N Channel

Overview The LA5735MC is a separately-excited step-down switching regulator (variable type).

BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device

NCP694. 1A CMOS Low-Dropout Voltage Regulator

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75

NTMFS4936NCT3G. NTMFS4936NC Power MOSFET 30 V, 79 A, Single N Channel, SO 8 FL

NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device

NCP800. Lithium Battery Protection Circuit for One Cell Battery Packs

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

NCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage

ASM1232LP/LPS 5V μp Power Supply Monitor and Reset Circuit

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

MMSZxxxET1 Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

Characteristic Symbol Max Unit P D 625 mw

Figure 1. NCP5104 Evaluation Board

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NTMFS4H01N Power MOSFET

MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes

MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70

NCP A Low Dropout Linear Regulator

MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS

MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

NCV887300LEDGEVB. NCV Automotive Grade High frequency Dimmable LED Boost Controller Evaluation Board User's Manual EVAL BOARD USER S MANUAL

LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m

MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection

MBRB20200CT. SWITCHMODE Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MMSZxxxET1G Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

UMC2NT1, UMC3NT1, UMC5NT1

MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

EVALUATION BOARD FOR STK N, 120N, 140N. Phenol 1-layer Board) Figure 2. STK NGEVB Figure 3. STK NGEVB Figure 4.

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors

NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.

NCP5360A. Integrated Driver and MOSFET

MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors

CS8183. Dual Micropower 200 ma Low Dropout Tracking Regulator/Line Driver

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

FPF1005-FPF1006 IntelliMAX TM Advanced Load Management Products

Transcription:

LE riving with NCP/V3063 Prepared by: Petr Konvicny, Bernie Weir ON Semiconductor Introduction Improvements in high brightness LEs present the potential for creative new lighting solutions that offer an improved lighting experience while reducing energy demand. LEs require constant current driver solutions due to their wide forward voltage variation and steep V/I transfer function. Figure. NCP/NCV3063 FN emo Board This application note describes how the NCP3063/NCV3063 can be configured in a boost topology to drive strings of LEs: be it traditional low power LEs or high brightness power LEs such as the Lumileds Luxeon series, the CREE XLAMP 4550 or XR-E or the OSRAM TopLE or Golden ragon. Configurations like this are found in 2 V C track lighting applications, automotive applications, and low voltage AC landscaping applications as well as task lighting such as under-cabinet R CCP L lights and desk lamps that might be powered from standard off-the-shelf 5 V C and 2 V C wall adapters. Key considerations in this design were achieving high conversion efficiency in the mid- % range and having flat current regulation across input line variation and output voltage variation. Boost Converter Topology The Boost topology is illustrated in Figure 2. When the low side power switch is turned on, current drawn from the input begins to flow through the inductor and the current I ton rises up as shown in Figure 2. When the low side switch is turned off, the current (I toff ) circulates through diode to the output capacitor and load. At the same time the inductor voltage is added with the input power supply voltage and as long as this is higher than the output voltage, the current continues to flow through diode. Provided that the current through the inductor is always positive, the converter is operating in Continuous Conduction Mode (CCM). On the next switching cycle, the process is repeated. When operating in CCM the output voltage is equal to: V OUT V IN (eq. ) The duty cycle is defined as: t ON t ON (eq. 2) t ON t OFF T The input ripple current is defined as: I V IN (eq. 3) f *L The load voltage must always be higher than the input voltage. This voltage is defined as: V LOA = V SENSE n * V ; Where V = LE forward voltage, V SENSE is the converter reference voltage, and n = # of LE's in cluster. V IN C IN C OUT LOA NCP3063 I ton I toff R SENSE Output Voltage/Current Feedback Figure 2. Semi-Ideal Boost Converter Semiconductor Components Industries, LLC, 2008 January, 2008 - Rev. Publication Order Number: AN89/

L30 00 H L302 0R5 R30 J30 VIN J302 R3 6xR0 % R32 R33 C30 0. F R34 R35 R36 C302 NC tpk VCC COMP U30 NCP3063 C308 00p SWC SWE TCAP C303 2.2nF 30 MBRS40LT3G C304 0. F J307 C305 R304 0R0 C306 0. F C307 J303 VOUT J304 J305 VAUX BC856BL* Q302 BC6BL* Q30 R306 k C309 47 F/ 6V R307 3R6 R307 R8 R3072 R8 -LE 302 MM3Z36VTG R303 J306 R305 ON/OFF R *Use Q30 (NPN) or Q302 (PNP) depending on the ON/OFF logic polarity desired. R302 o Not Attach (Not Used): R30, R302, R303, R307, R305 C306, C307 Q30, Q302 302 Figure 3. NCP3063/NCV3063 emo Board Application circuit Since the converter needs to regulate current independent of load voltage variation, a sense resistor is placed across the feedback voltage. This drop is calculated as: V SENSE = I LOA * R SENSE. The V SENSE corresponds to the internal voltage reference or feedback comparator threshold. Simple Boost ma LE driver The NCP/NCV3063 boost converter is configured as a ma LE driver is shown in Figure 3. It is well suited to automotive or industrial applications where limited board space and a high voltage and high ambient temperature range might be found. The NCP3063 also incorporates safety features such as peak switch current and thermal shutdown protection. The schematic has an external high side current sense resistor that is used to detect if the peak current is exceeded. In the constant current configuration, protection is also required in the event of an open LE fault since current will continue to charge the output capacitor causing the output voltage to rise. An external zener diode is used to clamp the output voltage in this fault mode. Although the NCP3063 is designed to operate up to 40 V additional input transient protections might be required in certain automotive applications due to inductive load dump. The main operational frequency is determined by external capacitor C303. The t on time is controlled by the internal feedback comparator, peak current comparator and main oscillator. The output current is configured by an internal feedback comparator with negative feedback input. The positive input is connected to an internal voltage reference of.25 V with.5% precision. The nominal LE current is setup by a feedback resistor. This current is defined as: I OUT.25 R SENSE (eq. 4) R SENSE correspond to R307 (or R307 and R3072) in the schematic. For a nominal ma operation a 3.6 resistor should be used. By changing the R SENSE resistor other values of current can be achieved. There are two approaches to implement LE dimming. Both use the negative comparator input as a shutdown input. When the pin voltage is higher than.25 V the switch transistor is off. You could connect an external PWM signal to pin ON/OFF and a power source to pin V AUX to realize the PWM dimming function. When the dimming signal exceeds the turn on threshold of the external PNP or NPN transistor, the comp pin will be pulled up. A TTL level input can also be used for dimming control. The range of the dimming frequency is from 00 Hz to khz, but it is recommended to use frequency around 200 Hz as this is safely above the frequency where the human eye can detect the pulsed behavior, in addition this value is convenient to minimize EMI. There are two options to determine the dimming polarity. The first one uses the NPN switching transistor and the second uses a PNP switching transistor. The switch on/off level is depending on chosen dimming topology. The external voltage source (V AUX ) should have a voltage ranging from 5 V C to V IN. Figure 3 illustrates average LEs current dependency on the dimming input signal duty cycle. For cycle by cycle switch current limiting a second comparator is used which has a nominal 200 mv threshold. 2

The value of resistor R30 determines the current limit value and is configured according to the following equation. I pk(sw) 0.2.33 A (eq. 5) 0.5 The maximum output voltage is clamped with an external zener, 302 with a value of 36 V which protects the NCP3063/NCV3063 output from an open LE fault. The demo board has a few options to configure it to your needs. You can use one 50 m (R30) or a combination of parallel resistors such as six resistors (R3 R36) for current sense. To set I LE a single 3.6 resistor (R307) or two.8 resistors in series (R307/2) can be used. To evaluate the functionality of the board, high power LEs with a typical V f = 3.42 V @ ma were connected in several series combinations (4, 6, 8 LE's string). Number of LEs String Forward Voltage at 25 C Min Typ Max 4.6 3.68 5.96 6 6.74 20.52 23.94 8 22.32 27.36 3.92 The efficiency was calculated by measuring the input voltage and input current and LE current and LE voltage as showed in Figure 4. The load regulation graph shows behavior of the NCP3063 boost converter across a broad input voltage range. The output current is dependent on the peak current, inductor value, input voltage and voltage drop value and of course on the switching frequency. I OUT 2 * I pk(sw) V OUT V IN V F V SWCE I pk(sw) V IN V SWCE (eq. 6) [A] 2*L*f V OUT V F V IN V OUT V F V SWCE [ ] (eq. 7) Output Voltage Input Voltage Schottky iode Forward Voltage Switch Voltage rop Peak Switch Current L f uty Cycle Inductor Value Switching Frequency This curve illustrates three distinct regions; in the first region, the peak current to the switch is exceeded tripping the overcurrent protection and causing the regulated current to drop, Region 2 is where the current is flat and represents normal operation, Region 3 occurs when V IN is greater than V OUT and there is no longer constant current regulation. Region 3 and are included here for illustrative purposes as this is not a normal mode of operation. The data is plotted for three values of inductors,, and 00 H to illustrate efficiency and output current regulation variation. The Coilcraft RFB0 series was utilized in this testing. As one would expect, since this design is optimized for CCM operation, lower values of inductor value would result in higher peak currents. Figure 5 illustrates this point clearly as at low V IN and low inductor value (), the current limit of.33 A is reached at an input of slightly below 7.5 V and the circuit starts to fall out of current regulation. With high values of inductance, the circuit remains in current regulation. Similar behavior is illustrated in Figures 7 and 9 for longer strings of LEs. Figure 2 illustrates the additional circuitry required to support 2 V AC input signal which includes the addition of a bridge rectifier and input filter capacitor. The rectified dc voltage is V INC 2 *V AC 7 V C (eq. 8) Conclusion LEs are now being used to replace traditional incandescent and halogen lighting sources in architectural, industrial, residential and the transportation lighting. The key challenge in powering LE's is providing a constant current source. The demo board for the NCP3063/NCV3063 can be easily configured for a variety of constant current boost LE driver applications. In addition there is an EXCEL tool at the ON Semiconductor website for calculating inductor and other passive components if the design requirements differ from this specific application voltages and currents illustrated in this example. 3

96 94 92 00 H 78 0.5 2.5 4.5 6.5 8.5 20.5 22.5 24.5 26.5 28.5 Figure 4. Boost Converter Efficiency with NCP3063 for 8 LEs Cluster I LE (A) 402.5 385 367.5 332.5 35 00 H 297.5 0.5 2.5 4.5 6.5 8.5 20.5 22.5 24.5 26.5 28.5 Figure 5. Current Regulation on the Input Voltage for 8 LEs Cluster 92 78 76 00 H 74 8 0 2 4 6 8 20 22 Figure 6. Converter Efficiency for 6 LEs Cluster I LE (A) 402.5 385 367.5 332.5 35 00 H 297.5 8 0 2 4 6 8 20 22 Figure 7. Current Regulation on the Input Voltage for 6 LEs Cluster 78 76 74 00 H 72 6.5 7.5 8.5 9.5 0.5.5 2.5 3.5 4.5 Figure 8. Converter Efficiency for 4 LEs Cluster I LE (A) 402.5 385 367.5 332.5 35 00 H 297.5 6.5 7.5 8.5 9.5 0.5.5 2.5 3.5 4.5 Figure 9. Current Regulation on the Input Voltage for 4 LEs Cluster 4

89 87 4 LE's 85 6 LE's 83 8 LE's 8 00 H 2 4 6 8 20 22 24 26 28 V OUT (V) Figure 0. NCP3063 Boost LE Configuration - Efficiency versus Output Voltage /# of LE's/ for Input Voltage 2 V C 89 6 LE's 87 8 LE's 85 83 8 00 H 9 20 2 22 23 24 25 26 27 V OUT (V) Figure. NCP3063 Boost LE Configuration - Efficiency versus Output Voltage /# of LE's/ for Input Voltage 2 V AC J30 JF 2VAC T.6A 304 ~ 303 SMB8J22CA J302 2VAC C308 0. F - ~ FL5005S L30 00 H VBUS o Not Attach (Not Used): R30 or R3, R32, R33, R34, R35, R36, R307 or R307, R3072, R305, R302, R303, L302, C306, C307 Q30, Q302 302 L302 0R5 R30 J30 VBUS R3 6xR0 % R32 R33 C30 0. F R34 R35 R36 C302 NC tpk VCC COMP U30 NCP3063 C308 00p SWC SWE TCAP C303 2.2nF 30 MBRS40LT3G C304 0. F C305 R304 0R0 C306 C307 J303 VOUT J304 J307 J305 VAUX BC856BL* Q302 BC6BL* Q30 R306 k C309 47 F/ 6V R307 3R6 R307 R8 R3072 R8 -LE 302 MM3Z36VTG R303 J306 R305 ON/OFF R *Use Q30 (NPN) or Q302 (PNP) depending on the ON/OFF logic polarity desired. R302 Figure 2. NCP3063 Boost LE Configuration Power from 2 V AC Line 5

I LE, AVERAGE LE CURRENT (ma) 400 300 250 200 50 00 50 0 200 Hz 0 20 40 60 00 IMMING UTY CYCLE (%) Figure 3. LE Average Current versus imming uty Cycle, imming Frequency 200 Hz ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor P.O. Box 563, enver, Colorado 27 USA Phone: 303-675-275 or 0-344-30 Toll Free USA/Canada Fax: 303-675-276 or 0-344-37 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 0-2-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 7 2 Japan Customer Focus Center Phone: 8-3-5773-3850 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative AN89/