DISCONTINUED. California Eastern Laboratories NX8564LE NX8565LE NX8566LE SERIES

Similar documents
PRELIMINARY DATA SHEET. NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE WITH DRIVER FOR 10 Gb/s APPLICATIONS

MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS

DISCONTINUED. LASER DIODE NX8570 Series nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION FEATURES

IFLD = IOP, Under modulation 2 (NX8567SAM/SA Series) (NX8567SAS Series)

DISCONTINUED LASER DIODE NX8311UD nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION FEATURES

IN COAXIAL PACKAGE FOR 2.5Gb/s APPLICATIONS

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE

NEC's 1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION

NEC's 1310 nm InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS

NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mw) 3-PIN POWER MINIMOLD (34 PACKAGE)

FOR OPTICAL DAA, HIGH LINEAR 16-PIN SOP PHOTOCOUPLER

FOR OPTICAL DAA, HIGH LINEAR 16-PIN SOP PHOTOCOUPLER

3.0 GHz DIVIDE BY 4 PRESCALER

HIGH ISOLATION VOLTAGE 4-PIN SOP PHOTOCOUPLER

6-PIN DIP, 0.08 Ω LOW ON-STATE RESISTANCE 2.0 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET

PHOTOCOUPLER PS2801A-1,PS2801A-4

5 V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER

4-PIN SOP 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch Optical Coupled MOS FET

PHOTOCOUPLER PS2505-1,-2,-4,PS2505L-1,-2,-4

NEC's NPN SILICON TRANSISTOR. ñ EIAJ 1 REGISTERED NUMBER PACKAGE OUTLINE

PHOTOCOUPLER PS2506-1,-2,-4,PS2506L-1,-2,-4

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS

3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER

HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

SiGe:C LOW NOISE AMPLIFIER FOR GPS

HIGH CMR, 10 Mbps OPEN COLLECTOR OUTPUT TYPE 5-PIN SOP PHOTOCOUPLER

HIGH CMR, 10 Mbps TOTEM POLE OUTPUT TYPE 5-PIN SOP PHOTOCOUPLER

L, S-BAND SPDT SWITCH

PHOTOCOUPLER PS2805-1,PS2805-4

250 MHz QAM IF DOWNCONVERTER UPC2798GR

HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI PHOTOCOUPLER

NPN SILICON TRANSISTOR

5 V AGC AMPLIFIER + VIDEO AMPLIFIER

NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT 2.0 ± 0.2

3 V SUPER MINIMOLD L-BAND SI MMIC DOWNCONVERTER

NEC's NPN SILICON TRANSISTOR

MTX510E Series 10Gb/s 1550nm Electro-absorption Modulated Laser (EML) 14 Pin Package with G-S-G RF Input

FLD5F6CX-J. 1,550nm MQW-DFB DWDM Direct Modulation Laser

PHOTOCOUPLER PS2561-1,-2,-4,PS2561L-1,-2,-4 PS2561L1-1,-2,-4,PS2561L2-1,-2,-4

13 GHz INPUT DIVIDE BY 4 PRESCALER IC FOR SATELLITE COMMUNICATIONS

TX-IF SiMMIC FOR W-CDMA AGC + I/Q MODULATOR W-CDMA

Narrow Linewidth Full Band Tunable DFB Laser Module. Component Specifications

Ratings Parameter. Symbol Condition Min. Max. Storage Temperature Tstg - 20 V Photodiode Forward Current IPF. Cooling - V. Cooling

NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14

NPN SILICON GERMANIUM RF TRANSISTOR NESG270034

DATA SHEET nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module

4-PIN SOP 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch Optical Coupled MOS FET

1480nm Pump Laser Diode Module Component Specifications (with Isolator, RoHS6/6)

PHOTOCOUPLER PS2533-1,-2,-4,PS2533L-1,-2,-4

FLD5F10NP. 1,550nm MQW-DFB Modulator Integrated Laser

10Gb/s CWDM Electro-absorption Modulated Lasers (EML) TOSA

Product Bulletin. Temperature Tunable 10 mw WDM Laser for Direct Modulation in Links up to 180 km CQF413/608 Series

NEC's 3.0 GHz DIVIDE BY 64/128/256 PRESCALER VOUT PACKAGE OUTLINE

X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form

FLD5F6CX-H. 1,550nm MQW-DFB Continous Wave Laser

Sumitomo Electric Industries, Ltd.

Product Bulletin. 2 mw WDM Laser for Direct Modulation in Links up to 100 km CQF915/108 Series

6, 8-PIN DIP, 250 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch, 2-ch Optical Coupled MOS FET

1550nm 2.5Gbit/s Directly Modulated DFB Laser module

Ratings Parameter. Symbol Condition Min. Max. Storage Temperature Tstg - 20 V PD Forward Current. Cooling - V. Cooling

PHOTOCOUPLER PS2932-1,PS2933-1

HIGH CMR, 10 Mbps OPEN COLLECTOR OUTPUT TYPE 5-PIN SOP (SO-5) PHOTOCOUPLER

DatasheetArchive.com. Request For Quotation

PHOTOCOUPLER PS2805C-1,PS2805C-4

Sumitomo Electric Industries, Ltd.

DWDM CW DFB Laser Module

HIGH POWER DFB LASERS

E2560/E2580-Type 10 Gbits/s EML Modules

DATA SHEET. InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE nm OTDR APPLICATION

1925 LMM. Transmission Laser Modules. KeyFeatures. Applications. For moreinfo

1925 LMM PRELIMINARY. 10 Gb/s Electro-Absorptive Integrated Laser Modulator Optical Sub-Assembly 1600 ps/nm TDM LC receptacle & FPC Preliminary

nm C-Band DWDM DFB Laser Module

HIGH BANDWIDTH DFB LASERS

E2560/E2580-Type 10 Gbits/s EML Modules for 2 km 80 km Transmission

Xeston Technologies. XESTON 1550nm DWDM CW DFB Laser With PM Fiber. XQF935 Series Specification Datasheet (Preliminary)

1782 DWDM High Power CW Source Laser

MC510 Series Electro-absorption Modulated Laser Chip (with optional carrier) 1550nm Non-ITU and DWDM Wavelengths for Applications up to 12.

Applications. Features. Data Sheet FRL15TCWx-D86-xxxxxA Apr Full Band Tunable DFB Laser Module

DWDM CW DFB Laser Module

HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES

DWDM Directly Modulated DFB Laser Module for Narrowcasting

NEC's HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES

NX8350TS. Data Sheet LASER DIODE DESCRIPTION FEATURES APPLICATIONS. R08DS0025EJ0100 Rev Sep 19, 2010

1782 DWDM High Power CW Source Laser

Gb/s 1310 nm DML DFB Laser

PHOTOCOUPLER PS2702-1

GPON OLT BOSA (1490nmTX DFB 1.25G/1310nmRX PIN-TIA 1.25G)

2.5 Gb/s Buried Het 4x100GHz Tunable Laser with Etalon Stabilisation and extended reach option LC25ET

1752A 1550 nm DOCSIS 3.1 DWDM DFB Laser Module

HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES

Product Bulletin. 20 mw CW DWDM Laser with Integrated Wavelength Monitor CQF975/508 Series

CWDM Coaxial DFB-LD Module for CATV Return-path

SO-SFP-16GFC-ER-Dxxxx

Model 1772 DWDM High Power CW Source Laser

Product Specification. 10Gb/s 200km Telecom CML TM 13pin-GPO Butterfly Transmitter DM /1/2

Up to 340 mw Fiber Bragg Grating Stabilized 980 nm Pump Modules S26 Series

1751A 1550 nm DWDM DFB Laser Module

PowerSource TM 1915 LMM 10 Gb/s Digital Electro-Absorption Laser Module ps/nm Application

Transcription:

FEATURES NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS INTEGRATED ELECTROABSORPTION MODULATOR VERY LOW DISPERSION PENALTY: Over 360 km (6480 ps/nm), NX8564LE-BC/CC Over 600 km (10800 ps/nm), NX8565LE-BC/CC Over 240 km (4320 ps/nm), NX8566LE-BC/CC LOW MODULATION VOLTAGE AVAILABLE FOR DWDM WAVELENGTH BASED ON ITU-T RECOMMENDATION 100 GHz grid, refer to ORDERING INFORMATION DESCRIPTION NX8564LE NX8565LE NX8566LE SERIES NEC's NX8564/8565/8566LE Series is an Electro-Absorption (EA) modulator integrated, 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode. The module is capable of 2.5 Gb/s applications of over 360 km, 600 km, 240 km ultralong-reach and available for Dense Wavelength Division Multiplexing (DWDM) wavelengths based on ITU-T recommendations, enabling a wide range of applications. California Eastern Laboratories

PACKAGE DIMENSIONS (Units in mm, unless otherwise specified ±0.2mm) 10 MIN. 8.0 8.89±0.13 1.25 0.75 7 8 15.24 2.54 20.83±0.13 26.04±0.13 29.97±0.25 1 14 4 φ2.67 22.0 MAX. 0.9 6.0 MAX. 12.7±0.15 Optical Fiber (SMF) Length : 900 MIN. 8.0 Nose Pin No. 1 2 3 4 5 6 7 5.4 Fiber PIN CONNECTIONS Function Thermistor Thermistor LD DC Bias PD Anode PD Cathode Cooler Anode Cooler Cathode TOP VIEW #7 #1 - + Cooler LD PD #8 #14 Pin No. 8 9 10 11 12 13 14 Thermistor MOD Function GND GND NC GND Signal Input (MOD), 50 Ω RF Input GND GND

OPTICAL FIBER CHARACTERISTICS PARAMETER SPECIFICATION UNIT Mode Field Diameter 9.3±0.5 μm Cladding Diameter 125±1 μm Tight Buffer Diameter 900±100 μm Cut-off Wavelength < 1270 nm Attenuation 1525 to 1575 nm < 0.3 db/km Minimum Fiber Bending Radius 30 mm Fiber Length 900 MIN. mm Flammability UL1581 VW-1 Fiber Length : 900 mm MIN. 35±2 mm -CC : SC-UPC connector -BC : FC-UPC connector 8.99±0.5 mm

ORDERING INFORMATION PART NUMBER NX8564-AZ* NX8565-AZ* NX8566-AZ* NX856 LE - CC : SC-UPC connector BC : FC-UPC connector (option) Without wavelength code : Wavelength is a certain point between 1528 to 1565 nm, 1579 to 1609 nm With wavelength code : Refer to Table A 4 : 360 km (6480 ps/nm) 5 : 600 km (10800 ps/nm) 6 : 240 km (4320 ps/nm) Table A: DWDM wavelength base on ITU-T recommendations (@ TLD = Tset) (1/2) Wavelength Code ITU-T Wavelength *1 (nm) PACKAGING Butterfly Package *NOTE: Please refer to the last page of this data sheet, Compliance with EU Directives for Pb-Free RoHS Compliance Infomation. Frequency (THz) Wavelength Code ITU-T Wavelength *1 (nm) Frequency 287 1528.77 196.10 485 1548.51 193.60 295 1529.55 196.00 493 1549.31 193.50 303 1530.33 195.90 501 1550.11 193.40 311 1531.11 195.80 509 1550.91 193.30 318 1531.89 195.70 517 1551.72 193.20 326 1532.68 195.60 525 1552.52 193.10 334 1533.46 195.50 533 1553.32 193.00 342 1534.25 195.40 541 1554.13 192.90 350 1535.03 195.30 549 1554.94 192.80 358 1535.82 195.20 557 1555.74 192.70 366 1536.60 195.10 565 1556.55 192.60 373 1537.39 195.00 573 1557.36 192.50 381 1538.18 194.90 581 1558.17 192.40 389 1538.97 194.80 589 1558.98 192.30 397 1539.76 194.70 597 1559.79 192.20 405 1540.55 194.60 606 1560.60 192.10 413 1541.34 194.50 614 1561.41 192.00 421 1542.14 194.40 622 1562.23 191.90 429 1542.93 194.30 630 1563.04 191.80 437 1543.73 194.20 745 1574.54 190.40 445 1544.52 194.10 753 1575.36 190.30 453 1545.32 194.00 761 1576.19 190.20 461 1546.11 193.90 770 1577.02 190.10 469 1546.91 193.80 778 1577.85 190.00 477 1547.71 193.70 786 1578.68 189.90 *1 The value which omitted and computed the 3rd place below the decimal point (THz)

Table A: DWDM wavelength base on ITU-T recommendations (@ TLD = Tset) (1/2) Wavelength Code ITU-T Wavelength *1 (nm) Frequency (THz) Wavelength Code ITU-T Wavelength *1 (nm) Frequency 795 1579.51 189.80 946 1594.64 188.00 803 1580.35 189.70 954 1595.48 187.90 811 1581.18 189.60 963 1596.33 187.80 820 1582.01 189.50 971 1597.18 187.70 828 1582.85 189.40 980 1598.04 187.60 836 1583.69 189.30 988 1598.89 187.50 845 1584.52 189.20 997 1599.74 187.40 853 1585.36 189.10 6006 1600.60 187.30 862 1586.20 189.00 6014 1601.45 187.20 870 1587.04 188.90 6023 1602.31 187.10 878 1587.88 188.80 6031 1603.16 187.00 887 1588.72 188.70 6040 1604.02 186.90 895 1589.56 188.60 6048 1604.88 186.80 904 1590.41 188.50 6057 1605.74 186.70 912 1591.25 188.40 6066 1606.60 186.60 921 1592.10 188.30 6074 1607.46 186.50 929 1592.94 188.20 6083 1608.32 186.40 937 1593.79 188.10 *1 The value which omitted and computed the 3rd place below the decimal point (THz)

ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Optical Output Power from Fiber Pf 10 mw Forward Current of LD IFLD 150 ma Reverse Voltage of LD VRLD 2.0 V Forward Voltage of Modulator VFEA 1 V Reverse Voltage of Modulator VREA 5 V Forward Current of PD IFPD 1 ma Reverse Voltage of PD VRPD 10 V Cooler Current IC 1.5 A Cooler Voltage VC 2.5 V Operating Case Temperature TC 20 to +70 C Storage Temperature Tstg 40 to +85 C Lead Soldering Temperature Tsld 260 (10 sec.) C

ELECTRO-OPTICAL CHARACTERISTICS (TLD = Tset, TC = -20 to +70ºC, unless otherwise specified) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT Laser Set Temperature Tset *1 20 35 C Operating Current Iop 50 60 80 ma Modulation Center Voltage Vcenter Under modulation *2 1.5 1.2 0.5 V Modulation Voltage Vmod Under modulation *2 2 3 V Forward Voltage of LD VFLD IFLD = Iop 1.6 2.0 V Threshold Current Ith 7 20 ma Optical Output Power from Fiber Pf IFLD = Iop, Under modulation *2 (NX8564/65LE Series) IFLD = Iop, Under modulation *2 (NX8566LE Series) 5 2 dbm 0 1 Peak Emission Wavelength λp IFLD = Iop, VEA = 0 V 1528 ITU-T *3 1565 nm 1574 1609 Side Mode Suppression Ratio SMSR IFLD = Iop, VEA = 0 V 30 > 37 db Extinction Ratio ER IFLD = Iop, Under modulation *2 10 > 11 db Rise Time tr IFLD = Iop, 20-80%, Under modulation *2 70 125 ps Fall Time tf IFLD = Iop, 80-20%, Under modulation *2 70 125 ps Dispersion Penalty DP IFLD = Iop, Under modulation *2, 4 < 1.5 2.0 db Isolation Is 23 db Relative Intensity Noise RIN 10 MHz to 10 GHz, VEA = 0 V, IFLD = Iop < 135 130 db/ Input Return Loss S11 IFLD = Iop, VEA = 1 V, 50 Ω, f = 130 MHz to 2 GHz IFLD = Iop, VEA = 1 V, 50 Ω, f = 2 to 2.5 GHz *1 NX8564/65/66LE Series : Tset is a certain point between 20 and 35 C NX8564/65/66LE Series : Tset is set at a certain point between 20 and 35 C for ITU-T grid wavelength *2 NX8564LE : C-band 360 km, L-band 288 km (6480 ps/nm) SMF under modulation NX8565LE : C-band 600 km, L-band 480 km (10800 ps/nm) SMF under modulation NX8566LE : C-band 240 km, L-band 192 km (4320 ps/nm) SMF under modulation 2.48832 Gb/s, PRBS 2 23 1, VEA = Vcenter ± 1/2Vmod, IFLD = Iop, TLD = Tset, NEC Test System Vcenter : a certain point between 1.5 and 0.5 V Vmod Iop : a certain point 3 V or below : a certain point between 50 and 80 ma *3 Available for DWDM wavelengths based on ITU-T recommendations (100 GHz grid). Please refer to ORDERING INFORMATION. *4 BER = 10 10 8 5 Hz db

ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Monitor PD: TLD = Tset, TC = -20 to +70ºC, unless otherwise specified) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT Monitor Current Im VRPD = 5 V, IFLD = Iop, VEA = 0 V 20 100 1000 μa Dark Current ID VRPD = 5 V, VEA = 0 V 10 na Terminal Capacitance Ct VRPD = 5 V, f = 1 MHz 15 pf Tracking Error γ *1 Im = const. 0.5 db *1 Tracking Error: γ (mw) Pop Pf 0 Pf ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Thermistor and TEC: TC = -20 to +70ºC) Im TLD = Tset, TC = 25ºC TLD = Tset, TC = -20 to +70ºC Im γ = 10 log PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT Thermistor Resistance R TLD = 25 C 9.5 10.0 10.5 kω B Constant B 3350 3450 3550 K TEC Current IC TLD = Tset 1.2 A TEC Voltage VC TLD = Tset 2.4 V Pf Pop [db]

ELECTRO-OPTICAL CHARACTERISTICS (TLD = Tset, TC = 25ºC, unless otherwise specified) NX8564/8565/8566LE SERIES Optical Output Power from Fiber Pf (mw) Extinction Ratio ER (db) Thermistor Resistance R (kω) 4.0 3.0 2.0 1.0 0 50 100 150 0 5 10 15 20 OPTICAL OUTPUT POWER FROM FIBER (CW) vs. FORWARD CURRENT Forward Current IF (ma) EXTINCTION RATIO vs. MODULATOR VOLTAGE 25 0 1 2 3 50 30 20 10 5 3 2 Reverse Voltage of Modulator VREA (V) THERMISTOR RESISTANCE vs. AMBIENT TEMPERATURE 1 0 10 20 30 40 50 60 70 75 Ambient Temperature TA (ºC) Forward Current IF (ma) Relative Intensity (db) 150 100 50 0 0-10 -20-30 -40-50 -60 FORWARD CURRENT vs. FORWARD VOLTAGE 0.5 1.0 Forward Voltage VF (V) SPECTRUM Wavelength λ (nm) 1.5 2.0-70 1540.0 1545.0 1550.0 1555.0 1560.0 Remark The graphs indicate nominal characteristics.

600 km STANDARD FIBER TRANSMISSION EXAMPLE (NX8565LE Series) Test Setup Bit Error Rate 2.5 Gb/s TX RX 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-11 10-12 10-13 -42 ERROR RATE CHARACTERISTICS back to back after 600 km -40-38 -36-34 -32 Received Power (dbm) 2.48832 Gb/s, NRZ 2 VP-P, PRBS 2 23-1, Iop = 70 ma, TC = 25ºC, Vcenter = -1.2 V, Vmod = 2.0 V Remark The graphs indicate nominal characteristics. 120 km 120 km 120 km 120 km -30-28 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. Relative Intensity (20 mv/div.) Relative Intensity (10 mv/div.) EYE DIAGRAM Back to Back (100 ps/div.) After 600 km (100 ps/div.) 120 km 08/24/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd.

Subject: Compliance with EU Directives 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM Concentration contained in CEL devices -A -AZ Not Detected (*) Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.