Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

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Transcription:

BCR8PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor NPN and PNP (R =. kω, R =47 kω) Pb-free (RoHS compliant) package Qualified according AEC Q 5 4 6 TR C B E 6 5 4 R R R TR R Tape loading orientation E B C EHA776 Top iew 6 5 4 Ws Direction of Unreeling Marking on SOT-6 package (for example Ws) corresponds to pin of device Position in tape: pin opposite of feed hole side EHA79 Type Marking Pin Configuration Package BCR8PN WFs =E =B =C 4=E 5=B 6=C SOT6 Maximum Ratings for NPN and PNP Types Parameter Symbol alue Unit Collector-emitter voltage CEO 5 Collector-base voltage CBO 5 Input forward voltage i(fwd) Input reverse voltage i(rev) 5 DC collector current ma Total power dissipation, T S = 5 C P tot 5 mw Junction temperature T j 5 C Storage temperature T stg -65... 5 Thermal Resistance Junction - soldering point ) R thjs 4 K/W For calculation of RthJA please refer to Application Note AN77 (Thermal Resistance Calculation) -7-8

BCR8PN Electrical Characteristics at T A =5 C, unless otherwise specified Parameter Symbol alues Unit min. typ. max. DC Characteristics for NPN and PNP Types Collector-emitter breakdown voltage (BR)CEO 5 - - = µa, I B = Collector-base breakdown voltage (BR)CBO 5 - - = µa, I E = Collector cutoff current BO - - na CB = 4, I E = Emitter cutoff current I EBO - - 64 µa EB = 5, = DC current gain ) h FE 7 - - - = 5 ma, CE = 5 Collector-emitter saturation voltage) CEsat - -. = ma, I B =.5 ma Input off voltage i(off).4 -.8 = µa, CE = 5 Input on oltage i(on).5 -. = ma, CE =. Input resistor R.5..9 kω Resistor ratio R /R.4.47.5 - AC Characteristics for NPN and PNP Types Transition frequency = ma, CE = 5, f = MHz Collector-base capacitance CB =, f = MHz f T - 7 - MHz C cb - - pf ) Pulse test: t < µs; D < % -7-8

BCR8PN NPN Type DC Current Gain h FE = f ( ) CE = 5 (common emitter configuration) Collector-Emitter Saturation oltage CEsat = f ( ), /I B =.5.4 hfe -4 C - CEsat.5..5..5..5-4 C - -4 - - A - - - A - Input on oltage i(on) = f ( ) CE =. (common emitter configuration) Input off voltage i(off) = f ( ) CE = 5 (common emitter configuration) i(on) -4 C - i(off) -4 C - - -5-4 - - A - - -5-4 - - A - -7-8

BCR8PN PNP Type DC Current Gain h FE = f ( ) CE = 5 (common emitter configuration) Collector-Emitter Saturation oltage CEsat = f ( ), /I B =.5.4 hfe hfe.5..5-4 C -..5..5-4 C - -4 - - A - - - A - Input on oltage i(on) = f ( ) CE =. (common emitter configuration) Input off voltage i(off) = f ( ) CE = 5 (common emitter configuration) i(on) -4 C - i(off) -4 C - - -5-4 - - A - - -5-4 - - A - 4-7-8

BCR8PN Total power dissipation P tot = f (T S ) mw 5 5 Ptot 75 5 5 75 5 5 5 45 6 75 9 5 C 5 T S Permissible Pulse Load R thjs = f (t p ) Permissible Pulse Load P totmax / P totdc = f (t p ) RthJS K/W.5...5...5 D = Ptotmax / PtotDC - D =.5...5...5 - -6-5 -4 - - s t p -6-5 -4 - - s t p 5-7-8

Package SOT6 BCR8PN Package Outline ±. +.. -.5 6 5 4 6x. M. MAX...9 ±. A Pin marking.65.65.±.. MIN. +..5 -.5 Foot Print..9.6.7.65.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 5, June Date code (Year/Month) Pin marking Laser marking BCR8S Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel For symmetric types no defined Pin orientation in reel. 4.. 8.5 ±.. M A Pin marking.5. 6-7-8

BCR8PN Edition 9--6 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7-7-8