YM AVANCE INFORMATION 3V N-CHANNEL ENHANCEMENT MOE MOSFET Product Summary V (BR)SS 3V escription R S(ON) max I max T A = +25 C 17mΩ @ V GS = 1V 8.4A 28mΩ @ V GS = 4.5V 6.8A This new generation MOSFET is designed to minimize the on-state resistance (R S(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications General Purpose Interfacing Switch Power Management Functions Features.6mm Profile Ideal for Low Profile Applications PCB Footprint of 4mm 2 Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green evice (Note 3) Mechanical ata Case: U-FN22-6 (Type F) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 1 per J-ST-2 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-ST-22, Method 28 Weight:.65 grams (Approximate) U-FN22-6 U-FN22-6 (Type F) G Pin1 S Top View Bottom View Pin Out Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging -7 U-FN22-6 (Type F) 3,/Tape & Reel -13 U-FN22-6 (Type F) 1,/Tape & Reel Notes: 1. No purposely added lead. Fully EU irective 22/95/EC (RoHS) & 211/65/EU (RoHS 2) compliant. 2. See http:///quality/lead_free.html for more information about iodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<15ppm total Br + Cl) and <1ppm antimony compounds. 4. For packaging details, go to our website at http:///products/packages.html. Marking Information U-FN22-6 (Type F) Y1 Y1 = Product Type Marking Code YM = ate Code Marking Y = Year (ex: C = 215) M = Month (ex: 9 = September) ate Code Key Year 215 216 217 218 219 22 221 222 Code C E F G H I J Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov ec Code 1 2 3 4 5 6 7 8 9 O N 1 of 7
Maximum Ratings (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit rain-source Voltage V SS 3 V Gate-Source Voltage V GSS ±2 V Continuous rain Current (Note 6) V GS = 1.V Steady T A = +25 C 8.4 I State T A = +7 C 6.7 A Continuous rain Current (Note 6) V GS = 4.5V Steady T A = +25 C 6.8 I State T A = +7 C 5.4 A Pulsed rain Current (1µs pulse, duty cycle = 1%) I M 4 A Maximum Body iode Continuous Current (Note 6) I S 2 A Avalanche Current (Note 7) L =.1mH I AS 11.4 A Avalanche Energy (Note 7) L =.1mH E AS 6.5 mj Thermal Characteristics Total Power issipation (Note 5) T A = +25 C.7 P T A = +7 C.4 W Thermal Resistance, Junction to Ambient (Note 5) Steady State R JA 18 C/W Total Power issipation (Note 6) T A = +25 C 1.8 P T A = +7 C 1.1 W Thermal Resistance, Junction to Ambient (Note 6) Steady State R JA 7 C/W Operating and Storage Temperature Range T J, T STG -55 to +15 C Electrical Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) rain-source Breakdown Voltage BV SS 3. V V GS = V, I = 25μA Zero Gate Voltage rain Current T J = +25 C I SS 1. A V S = 24V, V GS = V Gate-Source Leakage I GSS ±1 na V GS = ±2V, V S = V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V GS(TH) 1. 2.5 V V S = V GS, I = 25μA Static rain-source On-Resistance R S(ON) 13 17 V GS = 1V, I = 9.A mω 21 28 V GS = 4.5V, I = 7.A iode Forward Voltage V S 1.2 V V GS = V, I S = 2A YNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss 393 pf V S = 15V, V GS = V, Output Capacitance C oss 173 pf f = 1.MHz Reverse Transfer Capacitance C rss 27 pf Gate Resistance R g 1.1 Ω V S = V, V GS = V, f = 1.MHz Total Gate Charge (V GS = 1V) Q g 7. nc Total Gate Charge (V GS = 4.5V) Q g 3.6 nc Gate-Source Charge Q gs.9 nc V = 15V, I = 9A Gate-rain Charge Q gd 1.5 nc Turn-On elay Time t (ON) 1.8 ns Turn-On Rise Time t R 1.9 ns V = 15V, V GS = 1V, Turn-Off elay Time t (OFF) 7.5 ns R G = 6Ω, I = 9A Turn-Off Fall Time t F 2.4 ns Reverse Recovery Time t RR 1 ns I F = 9A, di/dt = 1A/μs Reverse Recovery Charge Q RR 2.6 nc Notes: 5. evice mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. evice mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I AS and E AS rating are based on low frequency and duty cycles to keep T J = +25 C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7
R S(ON), RAIN-SOURCE ON-RESISTANCE (Ω) R S(ON), RAIN-SOURCE ON-RESISTANCE (NORMALIZE) R S(ON), RAIN-SOURCE ON-RESISTANCE (Ω) R S(ON), RAIN-SOURCE ON-RESISTANCE (Ω) AVANCE INFORMATION 3. 25. 2. V GS = 1.V V GS = 6.V V GS = 4.5V V GS = 4.V V GS = 3.V 15 12 9 V S = 5V 15. 1. 5.. V GS = 2.5V V GS = 2.2V 1 2 3 4 5 V S, RAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 6 3 15 25-55 125 85 1 1.5 2 2.5 3 V GS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic.28.1.26.24.8.22.2 V GS = 4.5V.6 I = 9.A 8 6.4 I = 7.A 4 2 V GS = 1V.2 5 1 15 2 25 3 I, RAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. rain Current and Gate Voltage 4 8 12 16 2 V GS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic.24.22 V GS = 1V 15 1.8 1.6 V GS = 1V, I = 9.A.2 8 6 125 85 1.4 1.2 4 25 1 V GS = 4.5V, I = 7.A 2-55.8.8 5 1 15 2 25 3 Figure 5. Typical On-Resistance vs. rain Current and Junction Temperature.6-5 -25 25 5 75 1 125 15 T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Junction Temperature 3 of 7
V GS (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) AVANCE INFORMATION R S(ON), RAIN-SOURCE ON-RESISTANCE (Ω) V GS(TH), GATE THRESHOL VOLTAGE (V).4 2.3 V GS = 4.5V, I = 7.A 1.7 1.4 I = 1mA.2 1.1 I = 25μA V GS = 1V, I = 9.A.8.5-5 -25 25 5 75 1 125 15 T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Junction Temperature.2-5 -25 25 5 75 1 125 15 T J, JUNCTION TEMPERATURE ( ) Figure 8. Gate Threshold Variation vs. Junction Temperature 3 1 25 V GS = V f=1mhz 2 C iss 15 1 C oss 1 T J = 125 o C T J = 85 o C T J = 25 o C 5 T J = 15 o C T J = -55 o C C rss.3.6.9 1.2 1.5 V S, SOURCE-RAIN VOLTAGE (V) Figure 9. iode Forward Voltage vs. Current 1 5 1 15 2 25 3 V S, RAIN-SOURCE VOLTAGE (V) Figure 1. Typical Junction Capacitance 1 1 R S(ON) Limited P W =1µs 8 1 6 4 2 V S = 15V, I = 9A 2 4 6 8 Q g (nc) Figure 11. Gate Charge 1.1 P W =1ms P W =1ms P W =1ms P W =1s T J(Max) = 15 T C = 25 Single Pulse UT on 1*MRP Board V GS = 1V P W =1s C.1 1 1 1 V S, RAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 4 of 7
r(t), TRANSIENT THERMAL RESISTANCE 1.1 =.7 =.5 =.3 =.1 =.5 =.9 =.2 =.1 =.5 =Single Pulse R θja (t) = r(t) * R θja R θja = 147 /W uty Cycle, = t1 / t2 1E-5.1.1.1 1 1 1 1 t1, PULSE URATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7
Package Outline imensions Please see http:///package-outlines.html for the latest version. U-FN22-6 (Type F) A 2a E E2a z1 z(4x) e3 k2 k e e4 2 k1 b z2 e2 A1 E2 A3 L Seating Plane U-FN22-6 (Type F) im Min Max Typ A.57.63.6 A1..5.3 A3 - -.15 b.25.35.3 1.95 2.5 2. 2.85 1.5.95 2a.33.43.38 E 1.95 2.5 2. E2 1.5 1.25 1.15 E2a.65.75.7 e.65 BSC e2.863 BSC e3.7 BSC e4.325 BSC k.37 BSC k1.15 BSC k2.36 BSC L.225.325.275 z.2 BSC z1.11 BSC z2.2 BSC All imensions in mm Suggested Pad Layout Please see http:///package-outlines.html for the latest version. U-FN22-6 (Type F) X3 Y3 Y2 Pin1 C X X1 Y Y1 Y4 imensions Value (in mm) C.65 X.4 X1.48 X2.95 X3 1.7 Y.425 Y1.8 Y2 1.15 Y3 1.45 Y4 2.3 X2 6 of 7
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