E N FDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 4mΩ Features Max r DS(on) = 4.mΩ at V GS = V, I D = 35A Max r DS(on) = 2.mΩ at V GS = 4.5V, I D = 33A Low gate charge: Q g(tot) = 2.6nC(Typ), V GS = V Low gate resistance RoHS compliant L E A D G F R E E I D S MP L E M TIO N TA I-PAK (TO-25AA) General Description May 26 tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on) and fast switching speed. Application DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture G D S Short Lead I-PAK G D S MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage 25 V V GS Gate to Source Voltage ±2 V I D -Continuous (Die Limited) 4 A Drain Current -Continuous (Package Limited) 35 -Pulsed (Note ) 45 E AS Single Pulse Avalanche Energy (Note 2) 24 mj P D Power Dissipation 39 W T J, T STG Operating and Storage Temperature -55 to 75 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case TO-252,TO-25 3.8 C/W R θja Thermal Resistance, Junction to Ambient TO-252,TO-25 C/W R θja Thermal Resistance, Junction to Ambient TO-252,in 2 copper pad area 52 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8778 FDD8778 TO-252AA 3 2mm 2 units FDU8778 FDU8778 TO-25AA N/A(Tube) N/A 75 units FDU8778 FDU8778_F7 TO-25AA N/A(Tube) N/A 75 units 26 Fairchild Semiconductor Corporation
Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 2µA, V GS = V 25 V BV DSS T J I DSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current I D = 2µA, referenced to 25 C V DS = 2V, V GS = V 7.2 mv/ C T J = C 2 I GSS Gate to Source Leakage Current V GS = ±2V ± µa On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 2µA.2.5 2.5 V V GS(th) T J r DS(on) Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Dynamic Characteristics I D = 2µA, referenced to 25 C µa -5.3 mv/ C V GS = V, I D = 35A.6 4. V GS = 4.5V, I D = 33A 5.7 2. V GS = V, I D = 35A T J = 75 C 8.2 23.8 C iss Input Capacitance 635 845 pf V DS = 3V, V GS = V, C oss Output Capacitance 6 25 pf f = MHz C rss Reverse Transfer Capacitance 8 62 pf R g Gate Resistance f = MHz.3 Ω Switching Characteristics t d(on) Turn-On Delay Time 6 2 ns t V DD = 3V, I D = 35A r Rise Time 22 35 ns V GS = V, R GS = 27Ω t d(off) Turn-Off Delay Time 43 69 ns t f Fall Time 32 5 ns Q g(tot) Total Gate Charge at V V GS = V to V 2.6 8 nc Q V DD = 3V g(5) Total Gate Charge at 5V V GS = V to 5V 6.7 9.4 nc I D = 35A Q gs Gate to Source Gate Charge 2. nc I g =.ma Q gd Gate to Drain Miller Charge 3.2 nc mω Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = V, I S = 35A.3.25 V GS = V, I S = 5A.89.2 t rr Reverse Recovery Time I F = 35A, di/dt = A/µs 25 38 ns Q rr Reverse Recovery Charge I F = 35A, di/dt = A/µs 7 26 nc Notes: : Pulse time < µs, Duty cycle = 2%. 2: Starting, L =.mh, I AS = 22A,V DD = 23V, V GS = V. V 2
Typical Characteristics T J = 25 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 7 6 4 2 PULSE DURATION = 8µs DUTY CYCLE =.5%MAX V GS = V V GS = 5.V V GS = 4.5V V GS = 4.V V GS = 3.5V V GS = 3V..5..5 2. 2.5 3. 3.5.8.6.4.2..8 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On Region Characteristics I D = 35A V GS = V.6-8 -4 4 8 2 6 2 T J, JUNCTION TEMPERATURE ( o C) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rds(on), DRAIN TO 4. 3.5 3. 2.5 2..5 V GS = 3.V PULSE DURATION = 8µs DUTY CYCLE =.5%MAX V GS = 3.5V V GS = 4V V GS = 4.5V. V GS = V V GS = 5V.5 2 4 6 7 I D, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage SOURCE ON-RESISTANCE (mω) 4 2 I D = 35A PULSE DURATION = 8µs DUTY CYCLE =.5%MAX T J = 75 o C 3. 4.5 6. 7.5 9. V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) 7 6 4 2 PULSE DURATION = 8µs DUTY CYCLE =.5%MAX T J = 75 o C V DD = 5V T J = - 55 o C..5 2. 2.5 3. 3.5 4. 4.5 5. V GS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 75 o C T J = -55 o C E-3..2.4.6.8..2.4 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3
Typical Characteristics T J = 25 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) 8 6 4 2 3 6 9 2 5 Q g, GATE CHARGE(nC) Figure 7. V DD = V V DD = 6V V DD = 3V CAPACITANCE (pf) 2 Gate Charge Characteristics Figure 8. T J = o C E-3.. t AV, TIME IN AVALANCHE(ms) I D, DRAIN CURRENT (A) C iss C oss C rss f = MHz V GS = V 4. V DS, DRAIN TO SOURCE VOLTAGE (V) 4 2 Capacitance vs Drain to Source Voltage R θjc = 3.8 o C/W V GS =V V GS =4.5V 25 75 25 75 T C, CASE TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature I D, DRAIN CURRENT (A) 4 LIMITED BY PACKAGE OPERATION IN THIS SINGLE PULSE AREA MAY BE TJ = MAX RATED LIMITED BY r DS(on) TC = 25 O C. V DS, DRAIN-SOURCE VOLTAGE (V) Figure. us us ms ms DC Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) V GS = V T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: 75 T I = I C 25 ---------------------- SINGLE PULSE -5-4 -3-2 - t, PULSE WIDTH (s) Figure 2. Single Pulse Maximum Power Dissipation 4
Typical Characteristics T J = 25 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc 2. DUTY CYCLE-DESCENDING ORDER D =.5.2..5.2. SINGLE PULSE. -5-4 -3-2 - t, RECTANGULAR PULSE DURATION (s) Figure 3. Transient Thermal Response Curve P DM t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θjc x R θjc + T C 5
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