FDMA57PZ Single P-Channel PowerTrench MOSFET -2 V, -7.8 A, 2 mω Features Max r DS(on) = 2 mω at, I D = -7.8 A Max r DS(on) = 25 mω at V GS = -.5 V, I D = -7 A Max r DS(on) = 35 mω at V GS = -2.5 V, I D = -5.5 A Max r DS(on) = 5 mω at V GS = -.8 V, I D = - A Low Profile -.8 mm maximum - in the package MicroFET 2X2 mm HBM ESD protection level > 3.2K V typical (Note3) Free from halogenated compounds and antimony oxides RoHS Compliant General Description May 2 This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-stade resistance. The MicroFET 2X2 package offers exceptional thermal perfomance for its physical size and is well suited to linear mode applications. MOSFET Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage -2 V V GS Gate to Source Voltage ±8 V I D Drain Current -Continuous T A = 25 C (Note a) -7.8 -Pulsed -2 A Power Dissipation T P A = 25 C (Note a) 2. D Power Dissipation T A = 25 C (Note b).9 W T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction to Ambient (Note a) 52 R θja Thermal Resistance, Junction to Ambient (Note b) 5 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity 57 FDMA57PZ MicroFET 2X2 7 2 mm 3 units
Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = -25 µa, V GS = V -2 V BV DSS Breakdown Voltage Temperature T J Coefficient I D = -25 µa, referenced to 25 C -2 mv/ C I DSS Zero Gate Voltage Drain Current V DS = -6 V, V GS = V - µa I GSS Gate to Source Leakage Current V GS = ±8 V, V DS = V ± µa On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = -25 µa -. -.5 -.5 V V GS(th) T J Gate to Source Threshold Voltage Temperature Coefficient Dynamic Characteristics Switching Characteristics I D = -25 µa, referenced to 25 C 3 mv/ C, I D = -7.8 A 9 2 V GS = -.5 V, I D = -7 A 2 25 r DS(on) Drain to Source On Resistance V GS = -2.5 V, I D = -5.5 A 2 35 mω V GS = -.8 V, I D = - A 29 5, I D = -7.8 A, T J = 25 C 26 3 g FS Forward Transconductance V DS = -5 V, I D = -7.8 A 33 S C iss Input Capacitance 55 25 pf V DS = - V, V GS = V, C oss Output Capacitance 265 355 pf f = MHz C rss Reverse Transfer Capacitance 2 36 pf t d(on) Turn-On Delay Time 6. 3 ns V DD = - V, I D = -7.8 A t r Rise Time 25 ns, R GEN = 6 Ω t d(off) Turn-Off Delay Time 92 37 ns t f Fall Time 96 5 ns Q g(tot) Total Gate Charge 3 2 nc V DD = - V, I D = -7.8 A Q gs Gate to Source Gate Charge 2 nc Q gd Gate to Drain Miller Charge 7.5 nc Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = V, I S = -2. A (Note 2) -.6 -.2 V t rr Reverse Recovery Time 66 6 ns I F = -7.8 A, di/dt = A/µs Q rr Reverse Recovery Charge 7 nc Notes:. R θja is determined with the device mounted on a in 2 pad 2 oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 52 C/W when mounted on a in 2 pad of 2 oz copper. b. 5 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 3µs, Duty cycle < 2.%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 2
Typical Characteristics T J = 25 C unless otherwise noted -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2 2 6 2 8 V GS = -.5 V V GS = -3 V V GS = -2.5 V PULSE DURATION = 8 µs DUTY CYCLE =.5% MAX.2..6.8. -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure..6..2..8 I D = -7.8 A V GS = -.8 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.5 8 2 6 2 2 -I D, DRAIN CURRENT(A) On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage.6-75 -5-25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) 2.5 2..5. 6 2 8 V GS = -.8 V V GS = -3 V I D = - 7.8 A PULSE DURATION = 8 µs DUTY CYCLE =.5%MAX V GS = -2.5 V V GS = -.5 V PULSE DURATION = 8 µs DUTY CYCLE =.5% MAX 2 3 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure. On-Resistance vs Gate to Source Voltage -I D, DRAIN CURRENT (A) 2 2 6 2 8 PULSE DURATION = 8 µs DUTY CYCLE =.5% MAX V DS = -5 V T J = 5 o C T J = -55 o C.5..5 2. -V GS, GATE TO SOURCE VOLTAGE (V) -IS, REVERSE DRAIN CURRENT (A) 2.. V GS = V T J = 5 o C T J = -55 o C..2..6.8..2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3
Typical Characteristics T J = 25 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -Ig, GATE LEAKAGE CURRENT (A) 5 3 2 I D = -7.8 V 2 3 Figure 7. - -2 VGS = V -3 - -5-6 -7-8 -9 Figure 9. V DD = -8 V V DD = -2 V V DD = - V Q g, GATE CHARGE(nC). -V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage - 3 6 9 2 5 -V GS, GATE TO SOURCE VOLTAGE (V) Gate Leakage Current vs Gate to Source Voltage -ID, DRAIN CURRENT (A) CAPACITANCE (pf). 5 f = MHz V GS = V THIS AREA IS LIMITEDBY r DS(on) SINGLE PULSE TJ = MAX RATED R θja = 5 o C/W T A = 25 o C C iss C oss C rss us ms ms s s DC.. -V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area ms 8 2 P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE R θja = 5 o C/W TA = 25 o C.5 - -3-2 - t, PULSE WIDTH (sec) Figure. Single Pulse Maximum Power Dissipation
Typical Characteristics T J = 25 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja 2.. DUTY CYCLE-DESCENDING ORDER D =.5.2..5.2. SINGLE PULSE R θja = 5 o C/W. - -3-2 - t, RECTANGULAR PULSE DURATION (sec) Figure 2. Junction-to-Ambient Transient Thermal Response Curve P DM t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θja x R θja + T A 5
Dimensional Outline and Pad Layout 6
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I8 7