HiPerFED = 12 M I = 2x F = ns High Performance Fast ecovery Diode Low Loss and Soft ecovery Common Cathode Part number DSEC3-12 Backside: cathode Features / dvantages: pplications: Package: TO-247 Planar passivated chips ery low leakage current ery short recovery time Improved thermal behaviour ery low Irm-values ery soft recovery behaviour valanche voltage rated for reliable operation Soft reverse recovery for low EMI/FI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ntiparallel diode for high frequency switching devices ntisaturation diode Snubber diode Free wheeling diode ectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline ohs compliant Epoxy meets UL 94- Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Fast Diode Symbol SM M I I I M Definition max. reverse recovery current = 12 = ; = 6 reverse recovery time = 2 /µs = 12 T = 15 C T = 25 C T T = 25 C T atings typ. 6 9 5 1 max. 12 F forward voltage drop I = 2.61 F T C = 12 C thermal resistance junction to case 1.6 K/W F max. non-repetitive reverse blocking voltage reverse current, drain current Conditions F threshold voltage T = 175 C 1.3 for power loss calculation only r F slope resistance 46 mω thjc thch max. repetitive reverse blocking voltage average forward current thermal resistance case to heatsink I = F rectangular d =.5 P tot total power dissipation 95 W T = 15 C SM max. forward surge current t = 1 ms; (5 Hz), sine; = T = 45 C C J junction capacitance = 6 f = 1 MHz 5 T = 175 C C min..25 12 1.5 3.17 1.86 2.54 15 Unit µ m K/W 9 pf ns ns
Package atings Symbol Definition Conditions min. typ. max. Unit I MS MS current 1) per terminal 5 T virtual junction temperature -55 175 C T op operation temperature -55 15 C Weight M D F C TO-247 T stg storage temperature -55 15 C mounting torque.8 mounting force with clip 2 6 12 g Nm N Product Marking Logo Part No. ssembly Line ssembly Code IXYS XXXXXXXXX Zyyww abcd Date Code Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. DSEC3-12 DSEC3-12 Tube 3 477117 Equivalent Circuits for Simulation * on die level T = 175 C I Fast Diode max threshold voltage 1.3 max slope resistance * 43 mω
Outlines TO-247 E 2 Ø P Ø P1 D2 Q 2x E2 L1 2x b2 b4 2x e D L 3x b C 1 S E1 4 D1 Sym. Inches Millimeter min. max. min. max..185.29 4.7 5.3 1 87.12 2.21 2.59 2 59 98 1.5 2.49 D.819.845 2.79 21.45 E.61.6 15.48 16.24 E2.17.216 4.31 5.48 e.215 BSC 5.46 BSC L.78.8 19.8 2.3 L1 -.177-4.49 Ø P.1.144 3.55 3.65 Q.212.244 5.38 6.19 S.242 BSC 6.14 BSC b 39 55.99 1. b2 65 94 1.65 2.39 b4.12.135 2.59 3.43 c 15 35.38.89 D1.515-13.7 - D2 2 53.51 1.35 E1.53-13.45 - Ø P1 -.29-7.39
Fast Diode 35 3 25 2 T = 15 C 1 C 25 C 3. 2.5 2. 1.5 T = 6 5 I 3 M T = 6 [] 15 1 5 [nc] 1..5 [] 2 1 4 F [] Fig. 1 Forward current versus F 1 1 Fig. 2 Typ. reverse recov. charge versus 2 6 8 1 Fig. 3 Typ. peak reverse current I M versus 2. 18 T = 6 12 T = K f 1.5 1..5 I M 16 1 [ns] 12 F [] 8.8 [µs].4 8 12 16 T [ C] Fig. 4 Typ. dynamic parameters, I M versus T 1 2 6 8 1 Fig. 5 Typ. recovery time versus F 2 6 8 1 Fig. 6 Typ. peak forward voltage F and tfr versus di F t fr 2. 1.6 Z thjc [K/W].8.4 1 1 1 1 1 t [ms] Fig. 7 Transient thermal resistance junction to case Constants for Z thjc calculation: i thi (K/W) t i (s) 1.16 1 2.1 15 3.5 4.8.12