FDD4685 V P-Channel PowerTrench MOSFET V, 3A, 7mΩ Features Max r DS(on) = 7mΩ at V GS = V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low r DS(on) RoHS Compliant General Description October 6 This P-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to deliver low r DS(on) and good switching characteristic offering superior performance in application. Application Inverter Power Supplies S tm G D G S D-PAK TO-5 (TO-5) D MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage V V GS Gate to Source Voltage ± V Thermal Characteristics Drain Current -Continuous(Package Limited) T C = 5 C 3 I D -Continuous(Silicon Limited) T C = 5 C (Note ) -Continuous T A = 5 C (Note a) 8.4 A -Pulsed E AS Drain-Source Avalanche Energy (Note 3) mj Power Dissipation T P C = 5 C 69 D Power Dissipation (Note a) 3 W T J, T STG Operating and Storage Junction Temperature Range 55 to + C R θjc Thermal Resistance, Junction to Case.8 R θja Thermal Resistance, Junction to Ambient (Note a) Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDD4685 FDD4685 D-PAK(TO-5) 3 mm units 6 Fairchild Semiconductor Corporation
Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = µa, V GS = V V BV DSS Breakdown Voltage Temperature I T J Coefficient D = µa, referenced to 5 C 33 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 3V, V GS = V µa I GSS Gate to Source Leakage Current V GS = ±V, V GS = V ± na On Characteristics (Note ) V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = µa.6 3 V V GS(th) T J r DS(on) Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance I D = µa, referenced to 5 C 4.9 mv/ C V GS = V, I D = 8.4A 3 7 V GS = 4.5V, I D = 7A 3 35 V GS = V, I D = 8.4A, T J =5 C 33 4 g FS Forward Transconductance V DS = 5V, I D = 8.4A 3 S Dynamic Characteristics C iss Input Capacitance 79 38 pf V DS = V, V GS = V, C oss Output Capacitance 6 345 pf f = MHz C rss Reverse Transfer Capacitance 5 pf R g Gate Resistance f = MHz 4 Ω mω Switching Characteristics t d(on) Turn-On Delay Time 8 6 ns V DD = V, I D = 8.4A t r Rise Time 5 7 ns V GS = V, R GEN = 6Ω t d(off) Turn-Off Delay Time 34 55 ns t f Fall Time 4 6 ns Q g(tot) Total Gate Charge V DD = V, I D = 8.4A 9 7 nc Q gs Gate to Source Gate Charge V GS = 5V 5.6 nc Q gd Gate to Drain Miller Charge 6. nc Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = V, I S = 8.4A (Note ).85. V t rr Reverse Recovery Time 3 45 ns I F = 8.4A, di/dt = A/µs Q rr Reverse Recovery Charge 3 47 nc Notes: : R θja is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θja is determined by the user s board design. a. C/W when mounted on a in pad of oz copper b. 96 C/W when mounted on a minimum pad. : Pulse Test: Pulse Width < 3µs, Duty cycle <.%. 3: Starting T J = 5 C, L = 3mH, I AS = 9A, V DD = V, V GS = V.
Typical Characteristics T J = 5 C unless otherwise noted -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 8 6 PULSE DURATION = 8µs V GS = -3V 3 4 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure..8.6.4...8 I D =-8.4A V GS = -V V GS = -V V GS = -6V V GS = -4.5V V GS = -4V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.6 6 8 -I D, DRAIN CURRENT(A) On Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage.6 - -5 5 75 5 T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized On Resistance vs Junction Temperature rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) 3..6..8.4. 7 6 3 Figure 4. V GS = -3V V GS = -4V V GS = -4.5V I D = -8.4A PULSE DURATION = 8µs V GS = -6V V GS = -V PULSE DURATION = 8µs 3 4 5 6 7 8 9 -V GS, GATE TO SOURCE VOLTAGE (V) On-Resistance vs Gate to Source Voltage -I D, DRAIN CURRENT (A) 8 6 PULSE DURATION = 8µs T J = o C T J = -55 o C 3 4 5 6 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -IS, REVERSE DRAIN CURRENT (A) V GS = V T J = o C T J = -55 o C..4.6.8.. -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3
Typical Characteristics T J = 5 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -IAS, AVALANCHE CURRENT(A) 8 6 4 3 Q g, GATE CHARGE(nC) 9 8 7 6 5 Figure 7. 4 3 V DD = -V V DD = -3V V DD = -V. -V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage.. t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) -I D, DRAIN CURRENT (A) 4 3 3 f = MHz V GS = V Limited by Package V GS = -V C iss C oss C rss V GS = -4.5V R θjc =.8 o C/W 5 75 5 T C, CASE TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature -ID, DRAIN CURRENT (A) ms OPERATION IN THIS SINGLE PULSE AREA MAY BE TJ = MAX RATED DC LIMITED BY r DS(on) T C = 5 O C. -VDS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area us ms P(PK), PEAK TRANSIENT POWER (W) 3 V GS = -V SINGLE PULSE FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: T I = I c 5 ---------------------- 5 T c = 5 o C -3 - - t, PULSE WIDTH (s) Figure. Single Pulse Maximum Power Dissipation 4
Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. SINGLE PULSE E-3-5 -4-3 - - t, RECTANGULAR PULSE DURATION (s) Figure 3. Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C 5
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