Data Sheet December 21 14A, 5V,.1 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA977. Ordering Information PART NUMBER PACKAGE BRAND BUZ71 TO-22AB BUZ71 NOTE: When ordering, use the entire part number. Features 14A, 5V r DS(ON) =.1Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards Symbol D G S Packaging JEDEC TO-22AB DRAIN (FLANGE) SOURCE DRAIN GATE 21 Fairchild Semiconductor Corporation BUZ71 Rev. B
Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ71 UNITS Drain to Source Breakdown Voltage (Note 1).................................... 5 V Drain to Gate Voltage (R GS = 2kΩ) (Note 1)...................................V DGR 5 V Continuous Drain Current, T C = 55 o C............................................I D 14 A Pulsed Drain Current (Note 3)................................................ I DM 56 A Gate to Source Voltage..................................................... ±2 V Maximum Power Dissipation.................................................. P D 4 W Linear Derating Factor..........................................................32 W/ o C Single Pulse Avalanche Energy Rating (Note 4).................................. E AS 1 mj Operating and Storage Temperature....................................... T J, T STG -55 to 15 o C DIN Humidity Category - DIN 44.............................................. E IEC Climatic Category - DIN IEC 68-1............................................. 55/15/56 Maximum Temperature for Soldering Leads at.63in (1.6mm) from Case for 1s.................................... T L 3 Package Body for 1s, See Techbrief 334.....................................T pkg 26 o C o C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. T J = 25 o C to 125 o C. BUZ71 Electrical Specifications T C = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BS I D = 25µA, = V 5 - - V Gate to Threshold Voltage (TH) =, I D = 1mA (Figure 9) 2.1 3 4 V Zero Gate Voltage Drain Current I DSS T J = 25 o C, = 5V, = V - 2 25 µa T J = 125 o C, = 5V, = V - 1 1 µa Gate to Source Leakage Current I GSS = 2V, = V - 1 1 na Drain to Source On Resistance (Note 2) r DS(ON) I D = 9A, = 1V (Figure 8) -.9.1 Ω Forward Transconductance (Note 2) g fs = 25V, I D = 9A (Figure 11) 3. 5.2 - S Turn-On Delay Time t d(on) V CC = 3V, I D 3A, = 1V, R GS = 5Ω, - 2 3 ns Rise Time t r R L = 1Ω - 55 85 ns Turn-Off Delay Time t d(off) - 7 9 ns Fall Time t f - 8 11 ns Input Capacitance C ISS = 25V, = V, f = 1MHz - 48 65 pf Output Capacitance C OSS (Figure 1) - 28 45 pf Reverse Transfer Capacitance C RSS - 16 28 pf Thermal Resistance Junction to Case R θjc 3.1 o C/W Thermal Resistance Junction to Ambient R θja 75 o C/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current I SD T C = 25 o C - - 14 A Pulsed Source to Drain Current I SDM T C = 25 o C - - 56 A Source to Drain Diode Voltage V SD T J = 25 o C, I SD = 28A, = V, (Figure 12) - 1.6 1.8 V Reverse Recovery Time t rr T J = 25 o C, I SD = 14A, di SD /dt = 1A/µs, - 12 - ns Reverse Recovery Charge Q RR V R = 3V -.15 - µc NOTES: 2. Pulse Test: Pulse width 3µs, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. = 1V, starting T J = 25 o C, L = 82µH, I PEAK = 14A. (See Figures 14 and 15). 21 Fairchild Semiconductor Corporation BUZ71 Rev. B
Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 1..8.6.4.2 25 5 75 1 125 15 T C, CASE TEMPERATURE ( o C) 18 1V 16 14 12 1 8 6 4 2 5 1 15 T C, CASE TEMPERATURE ( o C) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE Z θjc, TRANSIENT THERMAL IMPEDANCE 1.1.5.2.1.5.2.1 NOTES: t 2 DUTY FACTOR: D = t 1 /t 2 PEAK T J = P DM x Z θjc + T C.1 1-5 1-4 1-3 1-2 1-1 1 1 1 t, RECTANGULAR PULSE DURATION (s) P DM t 1 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 1 2 1 1 1 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON) 5µs 1µs 1µs 1ms 1ms 1ms DC T J = MAX RATED SINGLE T C = 25 o PULSE C 1-1 1 1 1 1 2 1 3, DRAIN TO SOURCE VOLTAGE (V) 3 2 1 P D = 4W = 2V 1V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX = 8.V = 7.5V = 7.V = 6.5V = 6.V = 5.5V = 5.V = 4.5V = 4.V 1 2 3 4 5 6, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 21 Fairchild Semiconductor Corporation BUZ71 Rev. B
Typical Performance Curves Unless Otherwise Specified (Continued) I DS(ON), DRAIN TO SOURCE CURRENT (A) 15 PULSE DURATION = 8µs DUTY CYCLE =.5% MAX = 25V T J = 25 o C 1 5 5 1, GATE TO SOURCE VOLTAGE (V) r DS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω).4.3.2.1 PULSE DURATION = 8µs DUTY CYCLE =.5% MAX = 5V 5.5V 6V 6.5V 7V 7.5V 8V 9V 1V 2V 1 2 3 FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT r DS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω).3.2.1 = 1V, I D = 9A PULSE DURATION = 8µs DUTY CYCLE =.5% MAX -4 4 8 12 T J, JUNCTION TEMPERATURE ( o C) 16 (TH), GATE THRESHOLD VOLTAGE (V) 4 3 2 1 = I D = 1mA -5 5 1 15 T J, JUNCTION TEMPERATURE ( o C) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE C, CAPACITANCE (nf) 1 1 1 1-1 =, f = 1MHz C ISS = C GS + C GD C RSS = C GD C OSS C DS +C GS C ISS C OSS C RSS g fs, TRANSCONDUCTANCE (S) 6 5 4 3 2 1 PULSE DURATION = 8µs DUTY CYCLE =.5% MAX = 25V T J = 25 o C 1-2 1 2 3 4, DRAIN TO SOURCE VOLTAGE (V) 5 1 15 FIGURE 1. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 21 Fairchild Semiconductor Corporation BUZ71 Rev. B
Typical Performance Curves Unless Otherwise Specified (Continued) I SD, SOURCE TO DRAIN CURRENT (A) 1 2 1 1 1 1-1 PULSE DURATION = 8µs DUTY CYCLE =.5% MAX T J = 15 o C T J = 25 o C.5 1. 1.5 2. 2.5 3. V SD, SOURCE TO DRAIN VOLTAGE (V), GATE TO SOURCE VOLTAGE (V) 15 I D = 18A = 1V 1 = 4V 5 1 2 3 Q g, GATE CHARGE (nc) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms BS L t P VARY t P TO OBTAIN REQUIRED PEAK I AS R G + - I AS DUT V t P I AS.1Ω t AV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS t ON t d(on) t OFF t d(off) R L t r t f 9% 9% + R G - 1% 1% DUT 9% 1% 5% PULSE WIDTH 5% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 21 Fairchild Semiconductor Corporation BUZ71 Rev. B
Test Circuits and Waveforms (Continued) CURRENT REGULATOR (ISOLATED SUPPLY) 12V BATTERY.2µF 5kΩ.3µF SAME TYPE AS DUT Q gs Q gd Q g(tot) D G DUT I g(ref) I G CURRENT SAMPLING RESISTOR S I D CURRENT SAMPLING RESISTOR I g(ref) FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS 21 Fairchild Semiconductor Corporation BUZ71 Rev. B
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E 2 CMOS TM EnSigna TM FACT FACT Quiet Series STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START STAR*POWER Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4