OPTICAL DEVICES
Mitsubishi Electric Optical Devices: The Key to Connecting Information Networks in the Future. LASER DIODES FOR INDUSTRY & DISPLAY 638nm High-output Laser Diode for Industry and Displays Compared to LEDs, semiconductor lasers have lower power consumption, higher output and can be used with optical systems having a higher maximum aperture. These considerable advantages mean that they can be used for projectors that do not require focal adjustment. Mitsubishi Electric has a range of lasers available, including a multi-mode semiconductor laser with a 638nm wavelength and 1W output (when pulse-driven) that provides highly visible, vibrant red colors for color projectors. 0.9 0.8 0.7 0.6 500 0.5 y 0.4 0.3 490 0.2 520 540 Laser Display 560 srgb 580 600 620 D65 700 CMY 0.1 0.0 0.0 480 470 460 380 0.1 0.2 0.3 0.4 x 0.5 0.6 0.7 0.8 Selection map of Red Laser Diodes RED [638nm] (Display System etc.) ML501P73 High Luminance [Lateral Multi-mode] ML520G73 [638nm, 0.42W(cw)] ML501P73 [638nm, 1W(Pulse)] ML520G73 0 50 100 1000 Luminous Flux [lm] Selection map of High Power Short Laser Diodes (Except Red ) INFRARED [830nm] (Sensor etc.) ML60171C High Beam Quality [Lateral Single-mode] ML60171C [830nm, 260mW] Line-up of Laser Diodes Type Number Application Output Power @CW [mw] Output Power @Pulse [mw] Temperature Package ML501P73 Display 638 500 1000 40 ф5.6mm Capless ML520G73 Display 638 420 35 ф5.6mm TO-CAN ML60171C Sensor, Printing 830 260 60 ф5.6mm TO-CAN 1
OPTICAL DEVICES FOR OPTICAL COMMUNICATION SYSTEMS : Distributed Feedback Laser Diode Active layer s are semiconductor lasers that enable further and faster signal transmission than conventional s through maintaining the oscillation spectrum in a single longitudinal mode (a single wavelength component). This is achieved by installing a minute periodic structure (diffraction grating) within the internal elements of the laser diode. s are also available, featuring an electro-absorption modulator (EAM) integrated in front of the, for even further transmission. Active layer Diffraction grating Laser Diodes and Photo Diodes for Fiber to the Home (FTTH) PON (Passive Optical Network) Faster PON technology has led to the development of B-PON, G-PON and GE-PON in response to demands for increased speed and capacity in optical communication systems. Backed by the leading photo diode for FTTH in the B-PON field, s and As are designed for different types of access network optical fiber grids, providing a flexible approach to changes in customer specifications and packages. These parts are used extensively in G-PON, which has rapidly become increasingly popular around the world. OLT 1.5µm band or Upstream 1.3µm band or, A CAN Device for 10Gbps Transmission Mitsubishi Electric has developed an electro-absorption modulation () device with superior performance at high temperature and integrated it into a Peltier cooler, realizing a smaller package and lower power consumption. The TO56 chassis known for its excellent mass-production characteristics is adopted. In addition to a lineup including the industry-standard XMD-MSA TOSA and TO56 CAN appropriate for BiDi* modules, these devices contribute to the energy-saving operation of optical transmission equipment and various other needs. *BiDi : Bidirectional TO56 TOSA Terminology APC Angled Physical Contact A Avalanche Photo Diode A TIA Avalanche Photo Diode Trans Impedance Amplifier B-PON Broadband Passive Optical Network CPRI Common Public Radio Interface CWDM Coarse Division Multiplexing Distributed FeedBack Laser Diode DWDM Dense Division Multiplexing EAM Electro Absorption Modulator Electro absorption Modulator integrated Laser diode ER Extended Reach Fabry-Perot Laser Diode FR Fiber Reach FTTH G-PON GE-PON LC LED LR LRM OLT PC -TIA RoF Fiber To The Home Gigabit Passive Optical Network Gigabit Ethernet Passive Optical Network Lucent Connector Light Emitting Diode Long Reach Long Reach Multimode Optical Line Terminal Optical Network Unit Optical Time Domain Reflectometer Peer to Peer Physical Contact Photo Diode with Trans-Impedance Amplifier Radio over Fiber ROSA SC SDH SFP+ SONET TOSA VSR X2 XENPAK XFP 10G-EPON XG-PON XLMD-MSA XMD-MSA Receiver Optical Sub-Assembly Single fiber Connector Synchronous Digital Hierarchy Small Form-factor Pluggable Plus Synchronous Optical NETwork Transmitter Optical Sub-Assembly Very Short Reach 2nd Generation XENPAK 10 Gigabit Ethernet Transceiver Package 10 Gigabit small Form-factor Pluggable 10 Gigabit Ethernet Passive Optical Network 10 Gigabit Passive Optical Network 40 Gbps Miniature Device Multi Source Agreement 10 Gbps Miniature Device Multi Source Agreement 2
OPTICAL DEVICES FOR OPTICAL COMMUNICATION SYSTEMS Selection Map of OPTICAL DEVICES [Under 2.5Gbps] Bit Rate ~622Mbps 1.25Gbps 2.5Gbps ML720Y53S 1.3μm ML720LA11S / ML720Y53S for G-PON for G-PON 10G-EPON (Asymmetry) ML720T39S / ML720LA50S for for XG-PON ML920LA46S/ML920LA43S 1.49μm ML920LA16S for GE-PON OLT ML920LA46S for GE-PON OLT FU-650SDF 1.55μm 1.3μm 1.55μm ML920AA11S for 1.3μm For Analog FU-450SDF / FU-650SDF ML720K45S / ML720Y49S for for GE-PON ML920K45S / ML920AA53S for 1.55μm for CSFP ML920LA43S for TDM (1.55μm) 8λ CWDM ML720K19S for ML720K45S/ML720K19S ML720Y49S ML776H10/ML976H10 FU-670SHL For ML776H10 / ML976H10 FU-470SHL / FU-670SHL 1.3μm 1.55μm 831AK20 A 831AK20 (with TIA) for G-PON 3
Selection Map of OPTICAL DEVICES [Over 10Gbps] Bit Rate 10Gbps 40Gbps 100Gbps FU-412REA/FU-612REA 1.3μm 1.577μm 1.55μm 1.3μm FU-612REA for 40,80km TDM 40km DWDM FU-613REA for 40km TDM FU-614REA for 80km TDM ML958D56 for 40km TDM ML958K55 for 10G-EPON OLT ML768K42T for 10GBASE-LR ML768LA42T for CPRI ML768T42T for 10G-EPON FU-697SEA for VSR2000 ML768AA42T for 40GBASE-LR4 FU-412REA (28Gbps x 4λ) for 100GBASE-LR4/ER4 OTU4 ML7xx58 for 4λ CWDM FU-697SEA FU-613REA/FU-614REA ML958K55/ML958D56 ML768K42T ML768T42T FU-357RPA FU-357RPA for 80km TDM 40km DWDM A 831W24 831W24 (with TIA) for 10G-EPON : New Product : Under Development 4
OPTICAL DEVICES FOR OPTICAL COMMUNICATION SYSTEMS Line Up of [Under 2.5Gbps] Type Number Chip Type Package Temp. Features 2.5G 1.25G/ ~622M For Analog For ML720T39S ML720LA50S ML720K19S ML920LA46S ML920LA43S ML920LA43S ML720LA11S ML720Y53S ML720K45S ML720Y49S ML920LA16S ML920AA11S ML920K45S ML920AA53S FU-450SDF FU-650SDF FU-470SHL FU-670SHL ML776H10 ML996H10 Coaxial Pigtail Coaxial Pigtail Coaxial Pigtail Coaxial Pigtail 1270 1490 1470~1610 8λ CWDM 1490 1530 20~+95 10~+85 20~+85 20~+85 20~+70 20~+70 XG-PON G-PON OLT 8λ CWDM G-PON, 10G-EPON (Asymmetry) G-PON GE-PON, High coupling efficiency GE-PON OLT, CSFP CATV Return Path, RoF CATV Return Path, RoF Line Up of A [Under 2.5Gbps] 2.5G Type Number Chip Type Package Temp. Features 831AK20 A TO46-CAN 1490 Built-in TIA, G-PON SAFETY CAUTIONS FOR USE OR DISPOSAL OF LISTED PRODUCTS The warnings below apply to all products listed in this pamphlet. WARNING Laser Beam Injury GaAs While the laser diode is on, its gives a laser beam. Even if we can't see a laser beam by its wavelengt, penetration into the eye by a laser beam or its reflected light may cause eye injury. Prevent the irradiating part or its reflected light from entering the eyes. Fiber fragments may cause injury. In cases of fiber bending or breakage, never touch the fragment. Gallium arsenide (GaAs) is used in these products. To avoid danger, strictly observe the following cautions. Never place the products in your mouth. Never burn or break the products, or use any type of chemical treatment to reduce them to gas or powder. When disposing of the products, always follow the laws which apply, as well as your own company's internal waste treatment regulations. Disposal of Flame-Retarded Fiber Core Wire Flame retardant resin must be disposed of according to law of industrial waste in disposal place. This product is a bromine type flame-retarded resin, containing bromine compounds and antimony trioxide. All disposal operations should be conducted with full consideration of this content. 5
Line Up of / Modules [Over 10Gbps] Type Number Chip Type Package Temp. Features 100G FU-412REA TOSA, LC Receptacle LAN-WDM ML7xx58 TBD 4λ CWDM TBD 28Gbps x 4λ 25Gbps x 4λ 40G FU-697SEA LC/SC Pigtail ML768AA42T 4λ CWDM 43Gbps, VSR2000, XLMD-MSA Compliant 40GBASE-LR4, 10Gbps x 4λ FU-612REA TOSA, LC Receptacle 20~40km DWDM, XMD-MSA Compliant FU-613REA TOSA, LC Receptacle 5~+95 XFP/SFP+ 40km, XMD-MSA Compliant FU-614REA TOSA, LC Receptacle XFP/SFP+ 80km, XMD-MSA Compliant 10G ML958D56 ML958K55 1577 XFP/SFP+ 40km 10G-EPON OLT ML768K42T 10GBASE-LR, SONET/SDH ML768LA42T 1270, 1330 CPRI, 10Gbps x 2λ ML768T42T 1270 5~+75 10G-EPON (Symmetry) : New Product : Under Development Line Up of A / A Modules [Over 10Gbps] Type Number Chip Type Package Temp. Features 10G FU-357RPA A ROSA, LC Receptacle 5~+85 Built-in TIA, XFP 80km, XMD-MSA Compliant 831W24 A TO46-CAN 1577 40~+90 Built-in TIA, 10G-EPON/XG-PON Type Name Definition of Optical Devices for Optical Communication Systems FU- 6 50 S DF- FW1M15 Optical Module Module No. 4 1.3µm 6 1.55µm /A Module No. 3 Long Model of product Shows using optical fiber S : Single-mode fiber P : Polarization Maintaining fiber none : Multi-mode fiber R : LC receptacle Shows kind of chip FP laser diode Photo diode DF DFB laser diode AP Avalanche photo diode HL High power FP Laser diode PP Photo diode with preamp EA EAM Laser diode PA Avalanche photo diode with preamp Shows connector type, pin-connection type, level of optical output, customer code and specification's number, Swavelength cord, etc. Type Name Definition of Laser and Photo Diodes ML 7 68K 42 T Device Type [ML: Laser Diode : Photo Diode] Categories Package* Chip Series Pin Assignment Available for Monitor Contained Package Device Type Range (nm) ML 5 6 7 9 7 8 500<λ 700 700<λ 1000 1250<λ 1400 1400<λ 1000<λ 1600 Type N C R F E S T Anode Common Anode Common Anode Common Anode Common *Please contact our sales office about the selection packages. 6
OPTICAL DEVICES Please visit our website for further details. www.mitsubishielectric.com H-CX606-T KI-1503 Printed in Japan (TOT) New publication effective Mar. 2015. Specifications subject to change without notice. 2015 Mitsubishi Electric Corporation