Thermally-Enhanced High Power RF LDMOS FET 18 W, 28 V, 9 96 MHz Description The PTFB9182FC LDMOS FET is designed for use in power amplifier applications in the 9 MHz to 96 MHz frequency band. Features include high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB9182FC Package H-37248-4 Peak/Average Ratio, (db) 24 16 12 8 4 Single-carrier WCDMA Drive-up V DD = 28 V, I DQ = 14 ma, ƒ = 96 MHz 3GPP WCDMA signal, PAR = 1. db, 3.84 MHz BW Efficiency PAR @.1% CCDF - -4-6 ptfb9182fc_g1 25 3 35 4 45 5 55 Average Output Power (dbm) 6 4 Efficiency (%) Features Broadband internal input and output matching Dual path design (2 X 9 W) Typical CW performance at 96 MHz, 28 V - Ouput power @ P 1dB = 6 W - Efficiency = 56% - = 18 db Capable of handling 1:1 VSWR @ 28 V, 18 W (CW) output power Integrated ESD protection Low thermal resistance Pb-free and RoHS-compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) V DD = 28 V, I DQ = 14 ma, P OUT = 55 W avg, ƒ 1 =9 MHz, ƒ 2 = 96 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 1 db @.1% CCDF Characteristic Symbol Min Typ Max Unit G ps 18 19.5 db Drain Efficiency h D 32 34 % Adjancent Channel Power Ratio ACPR 35 33 dbc All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions!
2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = V, I DS = 1 ma V( BR)DSS 65 V Drain Leakage Current V DS = 28 V, V GS = V I DSS 1 µa V DS = 63 V, V GS = V I DSS 1 µa Gate Leakage Current V GS = 1 V, V DS = V I GSS 1 µa On-State Resistance V GS = 1 V, V DS =.1 V R DS(on).15 W Operating Gate Voltage V DS = 28 V, I DQ = 14 ma V GS 2.5 3.9 4.5 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS 6 to +1 V Junction Temperature T J C Storage Temperature Range T STG 4 to +15 C Thermal Resistance (T CASE = 7 C, 19 W CW) R qjc.38 C/W Ordering Information Type and Version Order Code Package Description Shipping PTFB9182FC V1 R PTFB9182FC-V1-R H-37248-4, earless flange Tape & Reel, 5 pcs PTFB9182FC V1 R25 PTFB9182FC-V1-R25 H-37248-4, earless flange Tape & Reel, 25 pcs
3 Typical Performance (data taken in a production test fixture) Single-carrier WCDMA Drive-up V DD = 28 V, I DQ = 14 ma, ƒ = 96 MHz, 3GPP WCDMA signal, PAR = 1 db, BW = 3.84 MHz Single-carrier WCDMA 3GPP Drive-up V DD = 28 V, I DQ = 14 ma, ƒ = 9-96 MHz, 3GPP WCDMA signal, PAR = 1 db, BW = 3.84 MHz ACP Up & Low (dbc) -1 - -3-4 -5-6 ACPU ACPL Efficiecy -7 25 3 35 4 45 5 55 Average Output Power (dbm) 6 5 4 3 1 Efficiency(%) ACP Up & Low (dbc) - -25-3 -35-4 -45-5 ptfb9182fc_g2-55 25 3 35 4 45 5 55 Average Output Power (dbm) 96MHz ACPU 96MHz ACPL 94MHz ACPU 94MHz ACPL 9MHz ACPU 9MHz ACPL ptfb9182fc_g3 21 CW Performance V DD = 28 V, I DQ = 14mA 96MHz 94MHz 9MHz 96MHz Eff 94MHz Eff 9MHz Eff 7 6 21 CW Performance at various V DD I DQ = 14 ma, ƒ = 96 MHz 24V 28V 32V 24V Eff 28V Eff 7 6 (db) 19 18 17 16 5 4 3 Efficiency (%) (db) 19 18 17 16 5 4 3 Efficiency (%) 15 1 15 Efficiency 1 14 29 33 37 41 45 49 53 57 Output Power (dbm) 14 27 31 35 39 43 47 51 55 ptfb9182fc_g4 ptfb9182fc_g5 Output Power (dbm)
4 Typical Performance (cont.) CW Performance Small Signal & Input Return Loss V DD = 28 V, I DQ = 14 ma (db) 18 16 14 IRL -5-1 -15 Input Return Loss (db) 12 ptfb9182fc_g6-75 8 85 9 95 1 15 11 Frequency (MHz) Load Pull Performance Load Pull Performance Pulsed CW signal: 1 µs, 1% duty cycle, 28 V, I DQ = 14 ma Freq [MHz] Zs Zl Max Output Power [db] P OUT [dbm] P OUT h D [%] P 1dB Zl Max Drain Efficiency [db] P OUT [dbm] 9 3.48 j4.93 1.95 j1.75 17.2 51.1 127 55.1 4.47 j.46.2 48.9 77 71. 942 4.17 j5.32 1.93 j1.59 18.3 5.4 11 56. 4.77 + j.6.8 47.8 6 66.4 96 4.61 j5.47 1.86 j1.64 18.3 5.4 19 56.2 4.23 j.33.6 48.2 65 66.9 P OUT h D [%]
p t f b 9 1 8 2 f c _ C D _ 3-2 6-2 1 5 PTFB9182FC 5 Reference Circuit, 9 96 MHz RO435,. (62) VDD RO435,. (62) C81 C82 R81 C84 R82 C11 C16 C15 R12 R11 R83 C85 R85 S2 + S3 S1 C83 R84 C3 C214 VDD C17 C14 C11 R13 C2 C6 C5 C216 C19 C215 RF_IN C12 C212 RF_OUT C13 C1 C8 C7 C9 C211 C4 C18 C213 C21 C21 PTB9182FC_IN_1 PTB9182FC_OUT_1 Reference circuit assembly diagram (not to scale)
6 Reference Circuit (cont.) Reference Circuit Assembly DUT PTFB9182FC V1 Test Fixture Part No. LTN/PTFB9182FC V1 PCB Rogers 435,.58 mm [. ] thick, 2 oz. copper, ε r = 3.66, ƒ = 9 96 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/rf Components Inform Component Description Manufacturer P/N Input C11 Capacitor, 33 pf ATC ATC1B33JW5XB C12, C17 CAPACITOR, 56 pf ATC ATC1B56JW5XB C13 CAPACITOR, 2.6 pf ATC ATC1B2R6CW5XB C14 CAPACITOR, 4.7 pf ATC ATC1B4R7CW5XB C15 Tantalum Capacitor, 4.7 μf AVX Corporation F931C475MAA C16 Capacitor, pf ATC ATCB3MC C18, C19 Capacitor, 3.9 pf ATC ATC1B3R9CW5XB C11 Capacitor, 1 pf ATC ATCB13MC C81, C82, C84 Capacitor, 1 pf Panasonic Electronic Components ECJ-1VB1H12K C83, C85 Capacitor,.1 μf Panasonic Electronic Components ECJ-3VB1H14 R11, R12 Resistor, 2 Ω Panasonic Electronic Components ERJ-8GEYJ221V R13, R83, R85 Resistor, 1 Ω Panasonic Electronic Components ERJ-8GEYJ1V R81 Resistor, 13 Ω Panasonic Electronic Components ERJ-3GEYJ132V R82 Resistor, 1 Ω Panasonic Electronic Components ERJ-3GEYJ122V R84 Resistor, Ω Panasonic Electronic Components ERJ-8GEYJ2V S1 Transistor Infineon Technologies BCP56 S2 Potentiometer, 2k Ω Bourns Inc. 3224W-1-2E S3 Voltage Regulator Texas Instruments LM78L5ACM Output C1, C2, C6, C8 Capacitor, 1 μf Taiyo Yuden UMK325C716MM-T C3, C212, C213 Capacitor, 56 pf ATC ATC1B56JW5XB C4 Capacitor, 2.2 pf ATC ATC1B2R2CW5XB C5, C7, C9, C216 Capacitor, 4.7 μf Murata Electronics North America GRM32ER71H475KA88 C21, C214 Capacitor, 1 μf Panasonic Electronic Components EEE-FP1V11AP C211 Capacitor, 1.5 pf ATC ATC1B1R5CW5XB C215 Capacitor, 1.7 pf ATC ATC1B1R7CW5XB
H-37248-4_pd_1-1-12 PTFB9182FC 7 Pinout Diagram (top view) S D1 D2 Pin Description D1 Drain device 1 D2 Drain device 2 G1 Gate device 1 G2 Gate device 2 S Source (flange) G1 G2 Lead connections for PTFB9182FC
H-37248-4_po_2_1-9-13 PTFB9182FC 8 Package Outline Specifications Package H-37248-4 2X 45 X 2.72 [45 X.17] (8.89 [.35]) C L (5.8 [.]) 2X 4.83±.51 [.19±.] D1 D2 4X R.76 +.13 -.38 +.5 [ R.3 -.15 ] FLANGE 9.78 [.385] LID 9.4 [.37] C L 19.43±.51 [.765±.] G1 G2 4X 3.81 [.15] 2X 12.7 [.5] SPH 1.57 [.62] 19.81±. [.78±.8] 1.2 [.4] [.15] -A- 3.76±.25 [.148±.1] C L S.57 [.81] Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±.127 [.5] unless specified otherwise. 4. Pins: D1, D2 drains; G1, G2 gates; S source. 5. Lead thickness:.1 +.76/.25 mm [.4+.3/.1 inch]. 6. Gold plating thickness: 1.14 ±.38 micron [45 ± 15 microinch].
9 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 1 14-7-22 Advance All Data Sheet reflects advance specification for product development 2 15-3-27 Production All All 2.1 16-6-1 Production 2 Updated ordering code to R 3 18-6-22 Production All Converted to Wolfspeed Data Sheet Data Sheet reflects released product specification Revised all data and includes updated final specs, typical performance graphs, loadpull, reference circuit, package outline For more information, please contact: 46 Silicon Drive Durham, North Carolina, USA 2773 www.wolfspeed.com/rf Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.47.7816 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright 18 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. www.wolfspeed.com