Ordering number : EN16A CMH Bipolar Transistor V,.A, Low VCE(sat) NPN Single MCPH http://onsemi.com Applications Low-frequency Amplifer, high-speed switching small motor drive, muting circuit Features Large current capacity Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=1mω[ic=.a, IB=mA] Ultrasmall package facilitates miniaturization in end products Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 6 V Collector-to-Emitter Voltage VCEO V Emitter-to-Base Voltage VEBO V Collector Current IC ma Collector Current (Pulse) ICP 1. A Collector Dissipation PC When mounted on ceramic substrate (6mm.8mm) 6 mw Junction Temperature Tj C Storage Temperature Tstg -- to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 19A-4 Product & Package Information Package : MCPH JEITA, JEDEC : SC-, SOT- Minimum Packing Quantity :, pcs./reel.1. 1.6..1 to. CMH-TL-E Packing Type : TL Marking LOT No. CM LOT No.. 1.6. TL Electrical Connection.8. 1 : Base : Emitter : Collector 1 MCPH Semiconductor Components Industries, LLC, 1 August, 1 181 TKIM/ TSIM TA-1 No.16-1/
CMH Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=4V, IE=A na Emitter Cutoff Current IEBO VEB=4V, IC=A na DC Current Gain hfe VCE=V, IC=mA 8 Gain-Bandwidth Product ft VCE=V, IC=mA MHz Output Capacitance Cob VCB=V, f=1mhz.8 pf Collector-to-Emitter Saturation Voltage VCE(sat) IC=mA, IB=mA mv Base-to-Emitter Saturation Voltage VBE(sat) IC=mA, IB=mA.9 1. V Collector-to-Base Breakdown Voltage V(BR)CBO IC=μA, IE=A 6 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE= V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=μA, IC=A V Turn-ON Time ton ns Storage Time tstg See specified Test Circuit. 4 ns Fall Time tf ns Switching Time Test Circuit PW=μs D.C. 1% IB1 IB OUTPUT INPUT VR RB RL Ω + + μf 4μF VBE= --V VCC=V IC=IB1= --IB=mA Ordering Information Device Package Shipping memo CMH-TL-E MCPH,pcs./reel Pb Free No.16-/
Collector Current, I C -- ma DC Current Gain, h FE Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv 4 4 ma 1mA ma ma IC -- VCE 8mA ma 6μA μa CMH ma ma ma 1mA Collector Current, I C -- ma IC -- VBE I B = 4 6 8 9..4.6.8 1. 1. Collector-to-Emitter Voltage, V CE -- mv IT6 Base-to-Emitter Voltage, V BE -- V IT hfe -- IC VCE(sat) -- IC V CE =V I C / I B = Ta= C C -- C 1. Collector Current, I C -- ma IT8 VCE(sat) -- IC I C / I B = C Ta= C -- C Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv 6 4 C Ta= C C -- C -- C Ta= C V CE =V 1. Collector Current, I C -- ma IT411 VCE(sat) -- IC C Ta= C -- C I C / I B = 1. Collector Current, I C -- ma IT9 VBE(sat) -- IC I C / I B = 1. Collector Current, I C -- ma Cob -- VCB IT1 f=1mhz Base-to-Emitter Saturation Voltage, V BE (sat) -- V 1. C Ta= -- C C -- pf Output Capacitance, Cob.1 1. Collector Current, I C -- ma IT111 1. 1. Collector-to-Base Voltage, V CB -- V IT11 No.16-/
CMH Gain-Bandwidth Product, f T -- MHz ft -- IC V CE =V ON Resistance, Ron -- Ω 1. f=1mhz Ron -- IB 1kΩ IN 1kΩ I B OUT 1. Collector Current, I C -- ma PC -- Ta IT11.1.1 1. Base Current, I B -- ma IT69 Collector Dissipation, P C -- mw 6 4 Mounted on a ceramic board(6mm.8mm) 4 6 8 Ambient Temperature, Ta -- C 14 16 IT116 No.16-4/
CMH Embossed Taping Specification CMH-TL-E No.16-/
CMH Outline Drawing CMH-TL-E Land Pattern Example Mass (g) Unit. * For reference mm Unit: mm.4.1.6.6.6 No.16-6/
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