MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Vdc Collector Base Voltage V CBO 30 Vdc Emitter Base Voltage V EBO Vdc Collector Current Continuous I C 500 madc Total Device Dissipation @ T A = 25 C Derate above 25 C Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoAmbient Thermal Resistance, JunctiontoCase P D 625 P D 1.5 12 T J, T stg 55 to +150 mw mw/ C W mw/ C Characteristic Symbol Max Unit C R JA 0 C/mW R JC 83.3 C/mW Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 2 3 BASE 2 EMITTER 1 (TO226AA) CASE 2911 STYLE 1 MARKING DIAGRAM MPS A1x AYWW x = 3 or 4 A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 05 June, 05 Rev. 3 1 Publication Order Number: MPSA13/D
ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V (BR)CES 30 Vdc (I C = 0 Adc, I B = 0) Collector Cutoff Current I CBO 0 nadc (V CB = 30 Vdc, I E = 0) Emitter Cutoff Current (V EB = Vdc, I C = 0) I EBO 0 nadc ON CHARACTERISTICS (Note 1) DC Current Gain (I C = madc, V CE = Vdc) MPSA13 MPSA14 (I C = 0 madc, V CE = Vdc) MPSA13 MPSA14 Collector Emitter Saturation Voltage (I C = 0 madc, I B = madc) Base Emitter On Voltage (I C = 0 madc, V CE = Vdc) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 2) (I C = madc, V CE = Vdc, f = 0 MHz) 1. Pulse Test: Pulse Width 300 s; Duty Cycle %. 2. f T = h fe f test. h FE 5,000,000,000,000 V CE(sat) 1.5 Vdc V BE(on) Vdc f T 125 MHz ORDERING INFORMATION Device Package Shipping MPSA13 5000 Units / Box MPSA13G 5000 Units / Box MPSA13RLRA 00 / Tape & Reel MPSA13RLRAG 00 / Tape & Reel MPSA13RLRM 00 / Ammo Pack MPSA13RLRMG 00 / Ammo Pack MPSA13RLRP 00 / Ammo Pack MPSA13RLRPG 00 / Ammo Pack MPSA13ZL1 00 / Ammo Pack MPSA13ZL1G 00 / Ammo Pack MPSA14 5000 Units / Box MPSA14G 5000 Units / Box MPSA14RLRA 00 / Tape & Reel MPSA14RLRAG 00 / Tape & Reel MPSA14RLRP 00 / Ammo Pack MPSA14RLRPG 00 / Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2
R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model NOISE CHARACTERISTICS (V CE = Vdc, T A = 25 C) e n, NOISE VOLTAGE (nv) 500 0 0 50 BANDWIDTH = Hz R S 0 50 0 0 500 1 k 2 k 5 k k k 50 k 0 k f, FREQUENCY (Hz) 0 A I C = ma A i n, NOISE CURRENT (pa) 0.7 0.3 BANDWIDTH = Hz I C = ma 0.07 0.05 0 A A 0.03 0.02 50 0 0 500 1 k 2 k 5 k k k 50 k 0 k f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current V T, TOTAL WIDEBAND NOISE VOLTAGE (nv) 0 0 70 50 30 BANDWIDTH = Hz TO 15.7 khz I C = A 0 A ma 50 0 0 500 00 R S, SOURCE RESISTANCE (k ) Figure 4. Total Wideband Noise Voltage NF, NOISE FIGURE (db) 14 BANDWIDTH = Hz TO 15.7 khz 12 A 8.0 0 A 6.0 4.0 I C = ma 0 50 0 0 500 00 R S, SOURCE RESISTANCE (k ) Figure 5. Wideband Noise Figure 3
SMALLSIGNAL CHARACTERISTICS C, CAPACITANCE (pf) 7.0 3.0 C ibo C obo h fe, SMALLSIGNAL CURRENT GAIN 4.0 0.8 0.6 0.4 V CE = V f = 0 MHz 0.04 0.4 4.0 40 V R, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance 50 0 0 500 Figure 7. High Frequency Current Gain h FE, DC CURRENT GAIN 0 k 0 k 70 k 50 k 30 k k k 7.0 k k 3.0 k T J = 125 C 25 C 55 C k 7.0 30 50 70 0 0 300 500 Figure 8. DC Current Gain V CE = V V CE, COLLECTOREMITTER VOLTAGE (VOLTS) 3.0 2.5 I C = ma 50 ma 250 ma 500 ma 1.5 50 0 0 500 00 I B, BASE CURRENT ( A) Figure 9. Collector Saturation Region V, VOLTAGE (VOLTS) 1.6 1.4 1.2 0.8 0.6 V BE(sat) @ I C /I B = 00 V BE(on) @ V CE = V V CE(sat) @ I C /I B = 00 7.0 30 50 70 0 0 300 500 R θ V, TEMPERATURE COEFFICIENTS (mv/ C) 3.0 4.0 *APPLIES FOR I C /I B h FE /3.0 *R VC FOR V CE(sat) VB FOR V BE 25 C TO 125 C 55 C TO 25 C 25 C TO 125 C 55 C TO 25 C 6.0 7.0 30 50 70 0 0 300 500 Figure. On Voltages Figure 11. Temperature Coefficients 4
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.7 0.3 0.07 0.05 0.03 0.02 D = 0.05 SINGLE PULSE SINGLE PULSE Z JC(t) = r(t) R JC МT J(pk) T C = P (pk) Z JC(t) Z JA(t) = r(t) R JA МT J(pk) T A = P (pk) Z JA(t) 0.01 50 0 0 500 k k k k t, TIME (ms) Figure 12. Thermal Response k 700 500 300 0 0 70 50 30 0.4 T A = 25 C T C = 25 C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT ms s 0 s 0.6 4.0 6.0 40 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) t 1 FIGURE A P P t P 1/f DUTY CYCLE t1 f t 1 tp PEAK PULSE POWER = P P P P Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data 5
R A N B MPSA13, MPSA14 PACKAGE DIMENSIONS TO226AA CASE 2911 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 75 05 4.45 5. B 70 4.32 5.33 C 25 65 3.18 4.19 X X D D 0.016 0.021 0.407 33 G 0.045 0.055 1.15 1.39 G H 0.095 2.42 2.66 H J J 0.015 0.0 0.39 0 K 00 12.70 L 50 6.35 V C N 0.080 4 2.66 1 N P 0.0 2.54 SECTION XX R 15 2.93 V 35 3.43 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 850821312 USA Phone: 48082977 or 8003443860 Toll Free USA/Canada Fax: 4808297709 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 1530051 Phone: 81357733850 6 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MPSA13/D