Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45 Vdc Emitter Base Voltage V EBO 6.5 Vdc Collector Current Continuous I C madc Total Device Dissipation @ T A = 5 C Derate above 5 C Total Device Dissipation @ T C = 5 C Derate above 5 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 65 P D 1.5 mw mw/ C W mw/ C T J, T stg 55 to +15 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient (Note 1) R JA C/W Thermal Resistance, JunctiontoCase R JC 8. C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. R θja is measured with the device soldered into a typical printed circuit board. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1 Device Package Shipping MPSA18 TO9 Units/Box MPSA18G MPSA18RLRA TO9 /Tape & Reel MPSA18RLRAG BASE COLLECTOR 1 EMITTER TO9 CASE 911 STYLE 1 MPSA18 = Device Code A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION TO9 (PbFree) TO9 (PbFree) MARKING DIAGRAM MPS A18 AYWW Units/Box /Tape & Reel MPSA18RLRM TO9 /Ammo Pack MPSA18RLRMG TO9 (PbFree) /Ammo Pack MPSA18RLRP TO9 /Ammo Pack MPSA18RLRPG TO9 /Ammo Pack (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 6 January, 6 Rev. 1 Publication Order Number: MPSA18/D
ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note ) (I C = madc, I B = ) V (BR)CEO 45 Vdc Collector Base Breakdown Voltage (I C = Adc, I E = ) EmitterBase Breakdown Voltage (I E = Adc, I C = ) Collector Cutoff Current (V CB = Vdc, I E = ) V (BR)CBO 45 Vdc V (BR)EBO 6.5 Vdc I CBO 5 nadc ON CHARACTERISTICS (Note ) DC Current Gain (I C = Adc, V CE = Vdc) (I C = Adc, V CE = Vdc) (I C = madc, V CE = Vdc) (I C = madc, V CE = Vdc) h FE 4 58 85 1 115 1 Collector Emitter Saturation Voltage (I C = madc, I B = madc) (I C = 5 madc, I B = madc) Base Emitter On Voltage (I C = madc, V CE = Vdc) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = madc, V CE = Vdc, f = MHz) CollectorBase Capacitance (V CB = Vdc, I E =, f = MHz) EmitterBase Capacitance (V EB = Vdc, I C =, f = MHz) V CE(sat).8. Vdc V BE(on).6.7 Vdc f T 16 MHz C cb 1.7 pf C eb 5.6 6.5 pf Noise Figure (I C = Adc, V CE = Vdc, R S = k, f = khz) (I C = Adc, V CE = Vdc, R S = k, f = Hz) Equivalent Short Circuit Noise Voltage (I C = Adc, V CE = Vdc, R S = k, f = Hz). Pulse Test: Pulse Width s, Duty Cycle.%. NF 1.5 V T 6.5 db nv Hz R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS (V CE = Vdc, T A = 5 C) NOISE VOLTAGE e n, NOISE VOLTAGE (nv) ma ma I C = ma en, NOISE VOLTAGE (nv) f = Hz khz Hz khz 5 1 k k 5 k k k 5 k k f, FREQUENCY (Hz) Figure. Effects of Frequency khz.1..5.1. Figure. Effects of Collector Current I n, NOISE CURRENT (pa)..7. I C = ma ma ma A A A.1 5 1 k k 5 k k k 5 k k f, FREQUENCY (Hz) NF, NOISE FIGURE (db) 16 BANDWIDTH = Hz to 15.7 khz A A A I C = ma 5 1 k k 5 k k k 5 k k Figure 4. Noise Current Figure 5. Wideband Noise Figure V T, TOTAL NOISE VOLTAGE (nv) 7 5 A ma ma I C = ma 5 1 k k 5 k k k 5 k k A Hz NOISE DATA A NF, NOISE FIGURE (db) 16 I C = ma ma ma A A A 5 1 k k 5 k k k 5 k k Figure 6. Total Noise Voltage Figure 7. Noise Figure
h FE, DC CURRENT GAIN (NORMALIZED)..7.4..1 V CE = V.. T A = 5 C 5 C 55 C.5.1.. Figure 8. DC Current Gain V, VOLTAGE (VOLTS).8.6.4.1 T J = 5 C V BE @ V CE = V V CE(sat) @ I C /I B =..5.1. 5 R θ VBE, BASEEMITTER TEMPERATURE COEFFICIENT (mv/ C).4.8 1. 1.6..4.1..5.1. 5 T J = 5 C to 5 C 55 C to 5 C Figure 9. On Voltages Figure. Temperature Coefficients C, CAPACITANCE (pf) 6. T J = 5 C C ob C eb C ib C cb..8.1. 5 V R, REVERSE VOLTAGE (VOLTS) f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) V 7 CE = V T J = 5 C 5. 5 7 Figure 11. Capacitance Figure. CurrentGain Bandwidth Product 4
PACKAGE DIMENSIONS TO9 (TO6) CASE 911 ISSUE AL NOTES: A B 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198.. CONTROLLING DIMENSION: INCH.. CONTOUR OF PACKAGE BEYOND DIMENSION R R IS UNCONTROLLED. P 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L INCHES MILLIMETERS SEATING PLANE K DIM MIN MAX MIN MAX A.175 4.45 5. B.17 4. 5. C.165.18 4.19 D.16.1.47 X X D G.45.55 1.15 1.9 H.95.4.66 G J.15..9 H J K..7 L 5 6.5 V C N.8.4.66 P..54 SECTION XX R.115.9 1 N V.15.4 STYLE 1: N PIN 1. EMITTER. BASE. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61, Phoenix, Arizona 8581 USA Phone: 488977 or 84486 Toll Free USA/Canada Fax: 4889779 or 844867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 889855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 91 Kamimeguro, Meguroku, Tokyo, Japan 1551 Phone: 8157785 5 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MPSA18/D