BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

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Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector Emitter Voltage V EB Collector Current Continuous I C Adc Total Power Dissipation @ T A = 25 C Derate above T A = 25 C Total Power Dissipation @ T A = 25 C Derate above T A = 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 625 12 P D 1.5 12 mw mw/ C W mw/ C T J, T stg 55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA 0 C/W Thermal Resistance, Junction to Case R JC 83.3 C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 2 3 BASE 2 EMITTER 3 MARKING DIAGRAM BC 517 AYWW CASE 29 STYLE 17 A = Assembly Location Y = Year WW = Work Week = Pb Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping BC517 5000 Units / Bulk BC517G (Pb Free) 5000 Units / Bulk BC517RL1 00 / Tape & Reel *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BC517RL1G (Pb Free) 00 / Tape & Reel BC517ZL1 00 / Ammo Pack BC517ZL1G (Pb Free) 00 / Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 06 January, 06 Rev. 3 1 Publication Order Number: BC517/D

ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V (BR)CES (I C = madc, I BE = 0) 30 Collector Base Breakdown Voltage (I C = Adc, I E = 0) Emitter Base Breakdown Voltage (I E = 0 Adc, I C = 0) Collector Cutoff Current (V CE = 30 ) Collector Cutoff Current (V CB = 30, I E = 0) Emitter Cutoff Current (V CB =, I C = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (I C = madc, V CE = ) Collector Emitter Saturation Voltage (I C = 0 madc, I B = madc) Collector Emitter Saturation Voltage (I C = madc, V CE = 5.0 ) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Note 2) (I C = madc, V CE = 5.0, f = 0 MHz) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle %. 2. f T = h fe f test (BR)CBO 40 V (BR)EBO I CES 500 I CBO 0 I EBO 0 h FE 30,000 V CE(sat) V BE(on) 1.4 f T 0 nadc nadc nadc MHz R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2

NOISE CHARACTERISTICS (V CE = 5.0, T A = 25 C) e n, NOISE VOLTAGE (nv) 500 0 0 50 5.0 BANDWIDTH = Hz R S 0 50 0 0 500 1 k 2 k 5 k k k 50 k 0 k f, FREQUENCY (Hz) 0 A I C = ma A i n, NOISE CURRENT (pa) 0.7 0.3 BANDWIDTH = Hz I C = ma 0.07 0.05 0 A A 0.03 0.02 50 0 0 500 1 k 2 k 5 k k k 50 k 0 k f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current V T, TOTAL WIDEBAND NOISE VOLTAGE (nv) 0 0 70 50 30 BANDWIDTH = Hz TO 15.7 khz I C = A 0 A ma 5.0 50 0 0 500 00 R S, SOURCE RESISTANCE (k ) Figure 4. Total Wideband Noise Voltage NF, NOISE FIGURE (db) 14 BANDWIDTH = Hz TO 15.7 khz 12 A 8.0 0 A 6.0 4.0 I C = ma 0 5.0 50 0 0 500 00 R S, SOURCE RESISTANCE (k ) Figure 5. Wideband Noise Figure 3

SMALL SIGNAL CHARACTERISTICS C, CAPACITANCE (pf) 7.0 5.0 3.0 C ibo C obo h fe, SMALL SIGNAL CURRENT GAIN 4.0 0.8 0.6 0.4 V CE = 5.0 V f = 0 MHz 0.04 0.4 4.0 40 V R, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance 50 0 0 500 Figure 7. High Frequency Current Gain h FE, DC CURRENT GAIN 0 k 0 k 70 k 50 k 30 k k k 7.0 k 5.0 k 3.0 k T J = 125 C 25 C 55 C k 5.0 7.0 30 50 70 0 0 300 500 Figure 8. DC Current Gain V CE = 5.0 V V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 3.0 2.5 I C = ma 50 ma 250 ma 500 ma 1.5 5.0 50 0 0 500 00 I B, BASE CURRENT ( A) Figure 9. Collector Saturation Region V, VOLTAGE (VOLTS) 1.6 1.4 1.2 0.8 0.6 5.0 V BE(sat) @ I C /I B = 00 V BE(on) @ V CE = 5.0 V V CE(sat) @ I C /I B = 00 7.0 30 50 70 0 0 300 500 R θ V, TEMPERATURE COEFFICIENTS (mv/ C) 3.0 4.0 5.0 *APPLIES FOR I C /I B h FE /3.0 *R VC FOR V CE(sat) VB FOR V BE 25 C TO 125 C 55 C TO 25 C 25 C TO 125 C 55 C TO 25 C 6.0 5.0 7.0 30 50 70 0 0 300 500 Figure. On Voltages Figure 11. Temperature Coefficients 4

RESISTANCE (NORMALIZED) 0.7 0.3 0.07 0.05 0.03 0.02 D = 0.05 SINGLE PULSE SINGLE PULSE Z JC(t) = r(t) R JC МT J(pk) T C = P (pk) Z JC(t) Z JA(t) = r(t) R JA МT J(pk) T A = P (pk) Z JA(t) 0.01 5.0 50 0 0 500 k k 5.0 k k t, TIME (ms) Figure 12. Thermal Response k 700 500 300 0 0 70 50 30 0.4 T A = 25 C T C = 25 C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT ms s 0 s 0.6 4.0 6.0 40 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) t 1 FIGURE A P P t P 1/f DUTY CYCLE t1 f t 1 tp PEAK PULSE POWER = P P P P Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data 5

PACKAGE DIMENSIONS (TO 226) CASE 29 11 ISSUE AL SEATING PLANE R A X X H V 1 N G P N B L K C D J SECTION X X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 75 05 4.45 5. B 70 4.32 5.33 C 25 65 3.18 4.19 D 0.016 0.021 0.407 33 G 0.045 0.055 1.15 1.39 H 0.095 2.42 2.66 J 0.015 0.0 0.39 0 K 00 12.70 L 50 6.35 N 0.080 4 2.66 P 0.0 2.54 R 15 2.93 V 35 3.43 STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082 1312 USA Phone: 480 829 77 or 800 344 3860 Toll Free USA/Canada Fax: 480 829 7709 or 800 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800 282 9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2 9 1 Kamimeguro, Meguro ku, Tokyo, Japan 153 0051 Phone: 81 3 5773 3850 6 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BC517/D