Industry standard 34mm IGBT module MIFA-HB12FA-1N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low EMI FRD chip o fast and soft reverse recovery o low voltage drop Design features copper baseplate Al2O3 DBC substrate ultrasonically welded power terminals Improved termal cycling RoHS compliant UL certified file-no. Е25544 Typical application AC motor drives solar inverter air conditioning high power converters and UPS 12 V 1 A Maximum rated values Definition Symbol Conditions Value Unit IGBT Collector-Emitter voltage VCES VGE =. 12 V Collector current (nominal) IC nom 1 A IC 25 Tvj (max) = 175 C; Tc = 25 C. 165 A Collector current (maximum continuous) IC 8 Tvj (max) = 175 C; Tc = 8 C. 1 A Repetitive peak collector current *1 ICRM ICRM = 3 x IC nom; tp = 1 ms. 3 A Short-circuit duration tpsc T vj = 25 C; V GE = ±15 V; V CE = 72 V; on = off = 1.1 Ω; max < 75 A. 1 T vj = 15 C; V GE = ±15 V; V CE = 72 V; on = off = 1.1 Ω; max < 62 A. 1 µs Gate-Emitter voltage VGES ±2 V Junction operating temperature Tvj (op) -4 +15 ºC Inverse diode \ Freewheeling diode Repetitive peak reverse voltage VRRM VGE = V. 12 V Forward current (nominal) IF nom 1 A Forward current (maximum continuous) IF 25 Tvj (max) = 175 C; Tc = 25 C. 13 A IF 8 Tvj (max) = 175 C; Tc = 8 C. 98 A Repetitive peak forward current *1 IFRM IFRM = 3 x IF nom; tp = 1 ms. 3 A Junction operating temperature Tvj (op) -4 +15 C Module Storage temperature Tstg -55 +5 C Isolation voltage Visol AC sin 5 Hz; t = 1 min. 4 V *1 Pulse width and repetition rate should be such that device junction temperature does not exceed maximum Tvj rating 8.6.218 Datasheet MIFA-HB12FA-1N_v1.1 page 1
Characteristics MIFA-HB12FA-1N Definition Symbol Conditions Value min. typ. max. Unit IGBT Collector-Emitter saturation voltage VCEsat VGE = +15 V; IС = 1 А; Tvj = 25 C 1.75 1.76 1.88 V tu = 1 µs. Tvj = 15 C 2.23 2.27 2.4 V Gate-Emitter threshold voltage VGE(th) IC = 4 ma; VCE = VGE; Tvj = 25 C; tu = 2 ms. 5.7 6.8 6.45 V Collector-Emitter cut-off current ICES VCE = 12 V; Tvj = 25 C 3.81 5.8 3 µа tu = 1 ms; VGE =. Tvj = 15 C.61.7 2. mа Gate-Emitter leakage current IGES VCE = ; VGE = ±2 V; Tvj = 25 C; tu = 3 ms. 2.17 8.75 2 na Input capacitance Cies - 9.1 - nf VCE = 1 V; VGE = V; Output capacitance Coes -.7 - nf f = 1 MHz; Tvj = 25 C. Reverse transfer capacitance Cres -.8 - nf Total gate charge QG IC = 1 А; VCE = 6 V; VGE = - 8 15 V. - 14 1117 nc Internal gate resistance RGint Tvj = 25 C. - 7.5 - Ω Turn-on delay time td(on) Tvj = 25 C 36 376 43 Tvj = 15 C 437 448 5 ns Tvj = 25 C 5. 53. 65. Rise time tri VCE = 6 V; ns Tvj = 15 C 57. 59. 7. Tvj = 25 C 4.82 6.2 9. Turn-on energy Eon IC max = 1 А; mj Tvj = 15 C 9.99 1.8 14. Tvj Turn-off delay time td(off) L = 3 µh. = 25 C 414 462 55 ns Tvj = 15 C 558 569 63 Fall time tfi Tvj = 25 C 194 238 31 Tvj = 15 C 361 395 47 ns Turn-off energy Eoff Tvj = 25 C 7.57 8.5 1. Tvj = 15 C 1.8 11.5 15. mj Collector-emitter threshold voltage VCE VGE = +15 V; Tvj = 15 C;.84.86.89 V On-State slope resistance (IGBT) rce ICE1 = 25 А; ICE2 = 1 А; tu = 1 µs. 13.9 14.2 14.8 mω Thermal resistance junction to case Rth(j-c) DC; ICE = 1±1 A; Itest =.5 A; VGE = +15 V. -.197.27 K/W Inverse diode \ Freewheeling diode Forward voltage drop VF IF = 1 А; Tvj = 25 C 1.76 1.79 1.92 V VGE = ; tu = 1 µs. Tvj = 15 C 1.86 1.9 1.98 V Tvj = 25 C 11 17 13 ns Reverse recovery time trr Tvj = 15 C 157 161 18 ns Tvj = 25 C 116 118 13 A Peak reverse recovery current IrrM VСE = 6 V; Tvj = 15 C 137 139 15 А IС max = 1 А; Tvj = 25 C 7. 7. 1. µc Reverse recovered charge Qrr RG on = 1.1 Ω; Tvj = 15 C L = 3 µh. 12. 12. 14. µc Tvj = 25 C 3. 3. 5. mj Reverse recovery energy Erec Tvj = 15 C 7. 8. 1. mj Threshold voltage V(T) Tvj = 15 C; VGE = ; ICE1 = 25 А;.81.82.85 V Forward slope resistance rt ICE2 = 1 А; tu = 1 µs 1.4 1.7 11.6 mω Thermal resistance junction to case Rth(JC-D) DC; ICE = 8±1 A; Itest =.5 A; VGE = +15 V. -.434.49 К/W 8.6.218 Datasheet MIFA-HB12FA-1N_v1.1 page 2
MIFA-HB12FA-1N Module Pin resistance RPxy T vj = 25 C. Parasitic inductance between terminals LPxy T vj = 25 C; f = 1 MHz. RP12 -.47.5 RP13 -.66.66 LP12-34.5 35. LP13-52.3 6. Thermal resistance case to heatsink RthCH per module -.2.4 К/W Mounting torque for screws to heatsink Ms to heatsink M6 3. - 5. N*m Mounting torque for terminal screws Mt to terminals M5 2.25 2.5 2.75 N*m Weight W - 15 17 g mω nh Notes: Insulating material operating temperature 125 C max; Case temperature 125 C max; The recommended operating junction temperature Tvj op = - 4 +15 C. 8.6.218 Datasheet MIFA-HB12FA-1N_v1.1 page 3
MIFA-HB12FA-1N Chart 1 typ. output characteristic, IGBT. 12 1 T 8 j = 25 C T j = 15 C 6 4 2 1 1,5 2 2,5 3 V CE [V] VGE = +15 V. 2 18 16 14 12 1 8 6 4 2 Chart 2 max. rated current vs temperature. 2 4 6 8 1 12 14 16 18 2 T C [ C] DC; VGE = +15 V; Tvj (max) = 15 C. E [mj] Chart 3 typ. turn-on/-off energy vs rated current, IGBT. 15 12 9 6 3 E off E on 1 2 3 4 5 6 7 8 9 1 11 VCE = 6 V; L = 3 µh; Tvj (max) = 15 C. E [mj] Chart 4 typ. turn-on/-off energy vs gate resistance, IGBT. 2 18 16 14 12 1 8 6 4 2 E off E on 1 2 3 4 5 6 7 8 9 1 11 [Ω] VCE = 6 V; IC max = 1 А; L = 3 µh; Tvj (max) = 15 C. 8.6.218 Datasheet MIFA-HB12FA-1N_v1.1 page 4
MIFA-HB12FA-1N Chart 5 typ. switching times vs rated current, IGBT. 7 Chart 6 typ. switching times vs gate resistance, IGBT. 12 6 1 t [ns] 5 4 3 2 t d_off t d_on t [ns] 8 6 4 t d_off t d_on 1 2 1 2 3 4 5 6 7 8 9 1 11 VCE = 6 V; L = 3 µh; Tvj (max) = 15 C. Chart 7 max. transient thermal impedance. 1 2 3 4 5 6 7 8 9 1 11 [Ω] VCE = 6 V; IC max = 1 А; L = 3 µh; Tvj (max) = 15 C. Chart 8 RBSOA. Z thjc [K/W] 1,1,1 Diode IGBT 25 2 15 1 5 Single pulse; VGE = +15 V.,1,1 1 1 12 t [s] V CE [V] VСE max = 12 V; IC max = 2*IC nom; L = 3 µh. 8.6.218 Datasheet MIFA-HB12FA-1N_v1.1 page 5
MIFA-HB12FA-1N Chart 9 typ. output characteristic, FRD. Chart 1 typ. switching losses vs rated current, FRD. 12 1 T j = 25 C 15 12 8 6 4 T j = 15 C E rec [мдж] 9 6 2 3 1 1,5 2 2,5 3 V F [V] 1 2 3 4 5 6 7 8 9 1 11 VGE = +15 V. VCE = 6 V; L = 3 µh; RG on = 1.1 Ω; Tvj (max) = 15 C. Chart 11 typ. switching losses vs gate resistance, FRD. Chart 12 typ. reverse recovered charge vs gate resistance, FRD. 9 3 8 7 25 6 2 E rec [мдж] 5 4 Q rr [мккл] 15 3 1 2 1 5 1 2 3 4 5 6 7 8 9 1 11 [Ом] 1 2 3 4 5 6 7 8 9 1 11 [Ом] VCE = 6 V; IC max = 1 А; L = 3 µh; Tvj (max) = 15 C. VCE = 6 V; IC max = 1 А; L = 3 µh; Tvj (max) = 15 C. 8.6.218 Datasheet MIFA-HB12FA-1N_v1.1 page 6
MIFA-HB12FA-1N t [ns] Chart 13 typ. switching times vs rated current, FRD. 6 5 4 3 2 1 t fi t ri 1 2 3 4 5 6 7 8 9 1 11 VCE = 6 V; L = 3 µh. Tvj (max) = 15 C. Chart 15 typ. gate charge characteristic. t [ns] Chart 14 typ. switching times vs gate resistance, FRD. 8 7 6 5 4 3 2 1 t fi t ri 1 2 3 4 5 6 7 8 9 1 11 VCE = 6 V; IC max = 1 А; L = 3 µh. Tvj (max) = 15 C. Chart 16 typ. reverse recovery current vs gate resistance FRD. 2 16 15 14 12 1 1 V GE [V] 5-5 -1 2 4 6 8 1 12 Q G [nc] I rr 8 6 4 2 1 2 3 4 5 6 7 8 9 1 11 [Ом] IC = 1 А; VCE = 6 V; VGE = - 8 15 V. VCE = 6 V; L = 3 µh. Tvj (max) = 15 C. 8.6.218 Datasheet MIFA-HB12FA-1N_v1.1 page 7
MIFA-HB12FA-1N Chart 17 typ. rated current vs frequency. 12 1 8 6 4 2 1 2 3 4 5 6 7 f SW [khz] Duty cycle 5% 8.6.218 Datasheet MIFA-HB12FA-1N_v1.1 page 8
MIFA-HB12FA-1N Overall dimensions: Package type FA Part numbering guide MIFA - HB 12 FA - 1 N MIFA IGBT module package type: FA HB 2 switches as Half-Bridge HC 1 switch as High-Side chopper LC 1 switch as Low-Side chopper 12 Voltage rating (VCES/1) FA IGBT+FRD chipset modification 1 Current Rating N Climatic version: normal climate The information contained herein is protected by Copyright. In the interest of product improvement, Proton-Electrotex reserves the right to change datasheet without notice. 8.6.218 Datasheet MIFA-HB12FA-1N_v1.1 page 9