MUR8E, MUR88E MUR8E is a Preferred Device SWITCHMODE Power Rectifiers Ultrafast E Series with High Reverse Energy Capability The MUR8 and MUR88E diodes are designed for use in switching power supplies, inverters and as free wheeling diodes. Features 2 mj Avalanche Energy Guaranteed Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175 C Operating Junction Temperature Popular TO 22 Package Epoxy Meets UL 9 V @.125 in. Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to V Pb Free Package is Available Mechanical Characteristics Case: Epoxy, Molded Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 26 C Max. for Seconds Marking: U88E, U8E 1 ULTRAFAST RECTIFIERS 8. A, 8 V V 3 1 3 TO 22AC CASE 221B MARKING DIAGRAM U8xE U8xE = Device Code x = 8 or ORDERING INFORMATION Device Package Shipping MUR8E MUR8EG TO 22 TO 22 (Pb Free) 5 Units / Rail 5 Units / Rail MUR88E TO 22 5 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2 March, 2 Rev. 2 1 Publication Order Number: MUR8E/D
MUR8E, MUR88E MAXIMUM RATINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MUR88E MUR8E Average Rectified Forward Current (Rated V R, T C = 15 C) Total Device Peak Repetitive Forward Current (Rated V R, Square Wave, 2 khz, T C = 15 C) Non Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 6 Hz) Rating Symbol Value Unit V RRM V RWM V R 8 V I F(AV) 8. A I FM 16 A I FSM A Operating Junction and Storage Temperature Range T J, T stg 65 to +175 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction to Case R JC 2. C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (i F = 8. A, T C = 15 C) (i F = 8. A, T C = 25 C) Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, T C = C) (Rated DC Voltage, T C = 25 C) Maximum Reverse Recovery Time (I F = A, di/dt = 5 A/ s) (I F =.5 A, i R = A, I REC =.25 A) Controlled Avalanche Energy (See Test Circuit in Figure 6) 1. Pulse Test: Pulse Width = 3 s, Duty Cycle 2.%. Characteristic Symbol Value Unit v F 1.5 1.8 i R 5 25 t rr 75 V A ns W AVAL 2 mj 2
I I MUR8E, MUR88E i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 7 5 3 2 7. 5. 3. 2..7.5.3.2.1..6 T J = 175 C C 25 C.8 1.2 1. 1.6 1.8, REVERSE CURRENT ( A), R, AVERAGE FORWARD CURRENT (AMPS) F(AV).1.1 9. 8. 7. 6. 5.. 3. 2. 1 * The curves shown are typical for the highest voltage device in the voltage * grouping. Typical reverse current for lower voltage selections can be * estimated from these same curves if V R is sufficiently below rated V R. 2 6 8 V R, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current* 15 175 C 15 C C T J = 25 C SQUARE WAVE 16 RATED V R APPLIED 17 18 v F, INSTANTANEOUS VOLTAGE (VOLTS) T C, CASE TEMPERATURE ( C) Figure 1. Typical Forward Voltage Figure 3. Current Derating, Case I F(AV), AVERAGE FORWARD CURRENT (AMPS) 9. R JA = 16 C/W T J = 175 C 12 R 8. JA = 6 C/W (No Heat Sink) 7. 6. 8. 5. SQUARE WAVE 6.. 3. 2. SQUARE WAVE 2 6 8 12 1 16 18 2 T A, AMBIENT TEMPERATURE ( C) P F(AV), AVERAGE POWER DISSIPATION (WATTS) 1. 2. SQUARE WAVE 2. 3.. 5. 6. 7. 8. 9. I F(AV), AVERAGE FORWARD CURRENT (AMPS) Figure. Current Derating, Ambient Figure 5. Power Dissipation 3
MUR8E, MUR88E +V DD I L H COIL BV DUT V D MERCURY SWITCH S 1 I D DUT I L I D V DD t t 1 t 2 t Figure 6. Test Circuit The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new E series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S 1 is closed at t the current in the inductor I L ramps up linearly; and energy is stored in the coil. At t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BV DUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2. By solving the loop equation at the point in time when S 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the V DD power supply while the diode is in Figure 7. Current Voltage Waveforms breakdown (from t 1 to t 2 ) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the V DD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S 1 was closed, Equation (2). The oscilloscope picture in Figure 8, shows the MUR8E in this test circuit conducting a peak current of one ampere at a breakdown voltage of 13 V, and using Equation (2) the energy absorbed by the MUR8E is approximately 2 mjoules. Although it is not recommended to design for this condition, the new E series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. EQUATION (1): W AVAL 1 2 LI 2 LPK BV DUT BV DUT V DD CH1 CH2 5V 5mV A 2 s 953 V VERT CHANNEL 2: I L.5 AMPS/DIV. EQUATION (2): CHANNEL 1: V DUT 5 VOLTS/DIV. W AVAL 1 2 LI 2 LPK 1 ACQUISITIONS 217:33 HRS SAVEREF SOURCE STACK CH1 CH2 REF REF TIME BASE: 2 s/div. Figure 8. Current Voltage Waveforms
MUR8E, MUR88E r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED).7.5.3.2.1.7.5.3.2 D =.5.1.5.1 SINGLE PULSE.1.1.2.5.1.2.5 2. 5. 2 5 2 5 t, TIME (ms) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2 Z JC (t) = r(t) R JC R JC = 1.5 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) Z JC (t) Figure 9. Thermal Response C, CAPACITANCE (pf) 3 3 T J = 25 C V R, REVERSE VOLTAGE (VOLTS) Figure. Typical Capacitance 5
MUR8E, MUR88E PACKAGE DIMENSIONS TO 22 CASE 221B ISSUE D Q H L B 1 3 G D A K F T U R J C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y1.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.595.62 15.11 15.75 B.38.5 9.65.29 C.16.19.6.82 D.25.35.6.89 F.12.17 3.61 3.73 G.19.2.83 5.33 H.1.13 2.79 3.3 J.18.25.6.6 K.5.562 12.7 1.27 L.5.6 1.1 1.52 Q..12 2.5 3. R.8.1 2. 2.79 S.5.55 1.1 1.39 T.235.255 5.97 6.8 U..5. 1.27 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 33 675 2175 or 8 3 386 Toll Free USA/Canada Fax: 33 675 2176 or 8 3 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 282 9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2 9 1 Kamimeguro, Meguro ku, Tokyo, Japan 153 51 Phone: 81 3 5773 385 6 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MUR8E/D