FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTE8N2AT 2V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package Marking TTE8N2AT 8N2AT Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (V GS = V) V DSS 2 V Continuous Drain Current I D 8 A Pulsed Drain Current (note1) I DM 32 A Gate-Source Voltage V GSS ±12 V Single Pulse Avalanche Energy (note2) E AS 3.5 mj Avalanche Current (note1) I AR 5. A Power Dissipation (T C = 25ºC ) P D 2.3 W Operating Junction and Storage Temperature Range T J, T stg -55~+15 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case R thjc 25 Thermal Resistance, Junction-to-Ambient R thja 62 K/W V1. 1
TTE8N2AT Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Value Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = 25µA 2 -- -- V Zero Gate Voltage Drain Current I DSS V DS = 2V, V GS = V, T J = 25ºC -- -- 1 V DS = 2V, V GS = V, T J = 15ºC -- -- 1 μa Gate-Source Leakage I GSS V GS = ±12V -- -- ±1 na Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25µA.6 -- 1.6 V V GS = 1V, I D = 4A 37 43 mω Drain-Source On-Resistance (Note3) R DS(on) V GS = 4.5V, I D = 4A -- 44 52 mω V GS = 3.5V, I D = 4A -- 48 56 mω Forward Transconductance (Note3) g fs V DS = 1V, I D =1A -- 5 -- S Dynamic Input Capacitance C iss -- 384 -- V GS = V, Output Capacitance C oss V DS = 1V, f = 1.MHz -- 48 -- Reverse Transfer Capacitance C rss -- 19 -- Total Gate Charge Q g -- 24 -- Gate-Source Charge Q gs V DD = 2V, I D = 4A, V GS = 1V -- 1.6 -- Gate-Drain Charge Q gd -- 3.4 -- pf nc Turn-on Delay Time t d(on) -- 5 -- Turn-on Rise Time t r V DD = 2V, I D = 1A, -- 6 -- Turn-off Delay Time t d(off) R G = 2.5Ω -- 9 -- ns Turn-off Fall Time t f -- 7 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current I S -- -- 8 T C = 25ºC Pulsed Diode Forward Current I SM -- -- 8 A Body Diode Voltage V SD T J = 25ºC, I SD = 1A, V GS = V -- -- 1.2 V Reverse Recovery Time t rr I F = 1A, -- 1 -- ns Reverse Recovery Charge Q rr di F /dt = 1A/μs -- 5 -- nc Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. I AS = 5A, V DD = 2V, R G = 25Ω, Starting T J = 25 C 3. Pulse Test: Pulse Width 3μs, Duty Cycle 1% V1. 2
V GS, Gate-to-Source Voltage (V) R DS(on), On-Resistance (Ω) I D, Drain Current (A) I s, Source Current (A) Capacitance (pf) I D, Drain Current (A) TTE8N2AT Typical Characteristics T J = 25ºC, unless otherwise noted 25 Figure 1. Output Characteristics 12 Figure 2. Transfer Characteristics 2 15 1V 6V 4V 3V 2V 1 8 V DS = 1V T J = 25ºC 1 6 4 T J = 15ºC 5 2.5 1 1.5 2 V DS, Drain-to-Source Voltage (V) 1 2 3 4 5 V GS, Gate-to-Source Voltage (V).8.7.6 Figure 3. On-Resistance vs. Drain Current V GS = 1V T J = 25ºC 1 3 Figure 4. Capacitance.5.4.3.2 1 2 1 1 C iss C oss C rss.1 1 2 3 4 5 I D, Drain Current (A) V GS = f = 1MHz 1 5 1 15 2 V DS, Drain-to-Source Voltage (V) 12 Figure 5. Gate Charge 1 2 Figure 6. Body Diode Forward Voltage 1 1 1 T J = 125ºC 8 1 6 1-1 T J = 25ºC 4 1-2 1-3 2 V DD = 2V 1-4 5 1 15 2.2.4.6.8 1 Q g, Total Gate Charge (nc) V SD, Source-to-Drain Voltage (V) 1-5 V1. 3
Z thjc, Thermal Impedance (Normalized) R DS(on), (Normalized) V GS(th), (Variance) TTE8N2AT Typical Characteristics T J = 25ºC, unless otherwise noted 2.5 2 Figure 7. On-Resistance vs. Junction Temperature V GS = 1V I D = 1A 1.5 Figure 8. Threshold Voltage vs. Junction Temperature 1.5 I D = 25µA 1 -.5.5-1 -5-25 25 5 75 1 125 15 T J, Junction Temperature (ºC) -1.5-5 -25 25 5 75 1 125 15 T J, Junction Temperature (ºC) 1 1 Figure 9. Transient Thermal Impedance 1 1-1 1-2 D =.5 D =.2 D =.1 D =.5 D =.2 D =.1 Single Pulse 1-3 1-6 1-5 1-4 1-3 1-2 1-1 T p, Pulse Width (s) V1. 4
Figure A:Gate Charge Test Circuit and Waveform TTE8N2AT Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform V1. 5
TTE8N2AT 6 V1.
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