CF5008A1 2. VCXO Module IC OVERVIEW FEATURES SERIES CONFIGURATION ORDERING INFORMATION

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NIPPON PRECISION CIRCUITS INC. CF5008A1 VCXO Module IC OVERVIEW The CF5008A1 is a VCXO module IC that employs a circuit structure with low parasitic capacitance effects and a wide frequency range. Built-in components mean that few external components are required to construct a VCXO. FEATURES Up to 30 MHz operation Inverter amplifier feedback resistor built-in 8 ma (V DD = 5 V), 4 ma (V DD = 3 V) drive capability 2.7 to 5.5 V supply voltage Circuit structure with low parasitic capacitance effects Direct connection to varicap diodes and crystal Few external components required to form a VCXO Amplitude limiting resistor Rd built-in Chip form (CF5008A1) SERIES CONFIGURATION Version Output frequency Input level Output duty level Standby output state CF5008A1 f O CMOS CMOS High impedance ORDERING INFORMATION Device CF5008A1 2 Package Chip form NIPPON PRECISION CIRCUITS 1

PAD LAYOUT (Unit : µm) UNUSED2 UNUSED1 XT2 (1400,1300) 1 2 3 4 5 8 7 6 (0,0) XT Chip size: 1.40 1.30 mm Chip thickness: 220 ± 30 µm Chip base: V DD level PAD DIMENSIONS Pad dimensions [µm] Number Name I/O Description X Y 1 UNUSED1 Not used. 153 1112 2 UNUSED2 Not used. 425 1112 3 XT2 O Oscillator output pin 660 1112 4 Supply voltage 865 1112 5 I Output-control input pin. signal output enabled when HIGH or open. High-impedance output when LOW. 1202 1112 6 O Output pin 1245 152 7 XT I Oscillator input pin 346 188 8 Ground 155 188 NIPPON PRECISION CIRCUITS 2

BLOCK DIAGRAM Rf XT CG CD Rd CC XT2 Control Circuits Rp RB2 OSCILLATOR ELEMENT CONSTANTS (typical values) R B1 R B2 R d R f R p C G C D C C CF5008A1 100kΩ 50kΩ 450Ω 150kΩ 100kΩ 20pF 10pF 70pF NIPPON PRECISION CIRCUITS 3

SPECIFICATIONS Absolute Maximum Ratings V SS = 0 V Parameter Symbol Condition Rating Unit Supply voltage range V DD 0.5 to 7.0 V Input voltage range V IN 0.5 to V DD + 0.5 V Output voltage range V OUT 0.5 to V DD + 0.5 V Operating temperature range T opr 40 to 85 C Storage temperature range T stg 65 to 150 C Output current I OUT 25 ma Recommended Operating Conditions V SS = 0 V, CL 15 pf, f 32.5 MHz Parameter Symbol Condition Rating min typ max Unit Supply voltage V DD 2.7 5.5 V Input voltage V IN V SS V DD V Operating temperature T OPR 20 80 C NIPPON PRECISION CIRCUITS 4

Electrical Characteristics V DD = 4.5 to 5.5 V, V SS = 0 V, Ta = 20 to 80 C unless otherwise noted. Parameter Symbol Condition Rating min typ max Unit HIGH-level output voltage V OH : Measurement cct 1, I OH = 8 ma, V DD = 4.5 V 4.0 4.2 V LOW -level output voltage V OL : Measurement cct 1, I OL = 8 ma, V DD = 4.5 V 0.3 0.4 V Output leakage current I : Measurement cct 2, = LOW, V OH = V DD 10 Z : Measurement cct 2, = LOW, V OL = V SS 10 µa HIGH-level input voltage V IH 0.8V DD V LOW -level input voltage V IL 0.2V DD V Current consumption I DD = open, Measurement cct 3, load cct 1, C L = 15 pf, f = 30 MHz 28 65 ma pull-up resistance R UP Measurement cct 4 50 150 kω Feedback resistance R f Design value, determined by the internal wafer pattern 150 kω Built-in resistance R d 450 Ω Design value, determined by the internal wafer pattern R c 0 Ω R B1 Measurement cct 5 100 kω R B2 Measurement cct 6 50 kω C G 20 pf Built-in capacitance C D Design value, determined by the internal wafer pattern 10 pf C C 70 pf Switching Characteristics V DD = 2.7 to 5.5 V, V SS = 0 V, Ta = 20 to 80 C unless otherwise noted. Parameter Symbol Condition Output rise time t r1 Measurement cct 3, load cct 1, 0.1V DD to 0.9V DD, C L = 15 pf Output fall time t f1 Measurement cct 3, load cct 1, 0.9V DD to 0.1V DD, C L = 15 pf Rating min typ max V DD = 2.7 to 3.6 V 3 8 V DD = 4.5 to 5.5 V 2.5 6 V DD = 2.7 to 3.6 V 3 8 V DD = 4.5 to 5.5 V 2.5 6 Unit ns ns Output duty cycle 1 Duty Measurement cct 3, load cct 1, Ta = 25 C, C L = 15 pf, f = 32MHz V DD = 3.0 V 42 58 V DD = 5.0 V 42 58 % Output disable delay time t PLZ Measurement cct 7, load cct 1, Ta = 25 C, C L 15 pf 100 ns Output enable delay time t PZL 100 ns 1. Determined by the lot monitor. Current consumption and Output waveform with NPC s standard crystal Cb f (MHz) R (Ω) L (mh) Ca (ff) Cb (pf) 30 17.2 4.36 6.46 2.26 L Ca R NIPPON PRECISION CIRCUITS 5

FUNCTIONAL DESCRIPTION Standby Function The oscillator output on changes as shown in the following table when goes LOW. Oscillator HIGH (or open) f O Normal operation LOW High impedance Normal operation TYPICAL APPLICATION CIRCUIT Typical circuit structures (C G and C D ) that use a varicap device have a reduced frequency range due to the effects of parasitic capacitance. The CF5008A1, however, has built-in components C C and R B2 that are connected in series with the varicap device, increasing the frequency output range. VCXO Module Rf XT CG VCC X'tal GND CD Rd Control Input Output VARI CAP CC XT2 RB2 Control Circuits Rp Output Enable CF5008 PARASITIC CAPACITANCE Parasitic capacitance are unwanted capacitance effects that occur due to the junction capacitance where the protection diodes and transistor drains are connected to the substrate. The following equivalent circuit figure shows the calculated parasitic capacitances. The surface area for each component is calculated from the IC layout pattern, and the capacitance calculated per unit area. Rf 150k XT 5.01p CG 20p 2.4p Divider (1/1) Rd CD 10p CC 70p XT2 4.7p RB2 50k Control Circuits Rp 100k N NIPPON PRECISION CIRCUITS 6

VARICAP (Variable Capacitance Diodes) SELECTION The CF5008A1 forms a VCXO with addition of an external varicap (variable capacitance diode) device. This section examines the results using various varicap devices. When the equivalent circuit in figure 1 is used, the load capacitance C L must be changed by a factor of 4 to 5 (10 to 40pF) to affect a ±100ppm frequency change. Varicap devices that can change the capacitance by a factor of 5 require a maximum capacitance in the range approximately 20 to 50pF. Devices matching this criteria are listed in the following table. L 4.08673mH Ca 7.56439fF R 17.7068Ω Cb 2.05389pF Frequency:28.633MHz C L :20pF Figure 1. Crystal oscillator element equivalent circuit Company Product Capacitance 1 Capacitance 2 HITACHI HVU17 50.0 to 85.0pF (VR = 1V) 5.23 to 8.84pF (VR = 4.5V) HITACHI HVU359 24.8 to 29.8pF (VR = 1V) 6.00 to 8.30pF (VR = 4V) HITACHI HVU362 41.6 to 49.9pF (VR = 1V) 10.1 to 14.8pF (VR = 4V) HITACHI HVC374B 21.5 to 24.0pF (VR = 1V) 12.5 to 14.5pF (VR = 2V) HITACHI HVC375B 15.5 to 17.0pF (VR = 1V) 4.0pF typ (VR = 4V) Panasonic MA304 24.8 to 29.8pF (VR = 1V) 6.00 to 8.30pF (VR = 4V) Panasonic MA2S304 24.8 to 29.8pF (VR = 1V) 6.00 to 8.30pF (VR = 4V) Panasonic MA2ZV05 18.5 to 20.5pF (VR = 1V) 3.60 to 4.10pF (VR = 4V) TOKO KV1811E 21.5pF typ (VR = 1V) 4.00pF typ (VR = 4V) TOKO KV1812 16.0pF typ (VR = 1V) 3.00pF typ (VR = 4V) NIPPON PRECISION CIRCUITS 7

MEASUREMENT CIRCUITS Measurement cct 1 Measurement cct 4 When measuring VOL Signal Generator R1 C1 XT When measuring VOH R3 R2 A IRUP RUP = IRUP XT input waveform (10MHz) 0V output output VOH 0V VOL 0V Measurement cct 5 C1 : 0.001µF R1 : 50Ω R2 : 500Ω R3 : 512.5Ω A IRB1 XT1 VCNOT RB1 = IRB1 Measurement cct 2 IZ IZ Measurement cct 6 A V A IRB2 XT2 RB2 = IRB2 Measurement cct 3 A IDD Measurement cct 7 X'tal C3 XT XT2 Signal Generator C1 XT R1 C3 : 15pF C1 : 0.001µF R1 : 50Ω NIPPON PRECISION CIRCUITS 8

Load cct 1 output CL (Including probe capacity) C L = 15pF : I DD, DUTY, t r1, t f1 Switching Time Measurement Waveform Output duty level (CMOS) output 0.1 0.9 0.9 0.1 DUTY measuring voltage (0.5) tr TW tf Output duty cycle (CMOS) output DUTY measuring voltage (0.5) TW T DUTY= TW/ T 100 (%) Output Enable/Disable Delay VIL VIH tplz tpzl output inputwaveform tr = tf 10ns NIPPON PRECISION CIRCUITS 9

NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility for the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision Circuits Inc. makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification. The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter, including compliance with export controls on the distribution or dissemination of the products. Customers shall not export, directly or indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies. NIPPON PRECISION CIRCUITS INC. NIPPON PRECISION CIRCUITS INC. 4-3, Fukuzumi 2-chome Koto-ku, Tokyo 135-8430, Japan Telephone: 03-3642-6661 Facsimile: 03-3642-6698 NC9816AE 1999.09 NIPPON PRECISION CIRCUITS 10