FDPF3860T N-Channel PowerTrench MOSFET 00 V, 20 A, 38.2 mω Features R DS(on) = 29. mω (Typ.) @ V GS = 0 V, I D = 5.9 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low R DS(on) High Power and Current Handling Capability RoHS Compliant Description December 203 This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Consumer Appliances LCD/LED/PDP TV Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D G DS G TO-220F S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted. Symbol Parameter FDPF3860T Unit V DSS Drain to Source Voltage 00 V V GSS Gate to Source Voltage ±20 V I D Drain Current - Continuous (T C = 25 o C) 20 - Continuous (T C = 00 o C) 2.7 A I DM Drain Current - Pulsed (Note ) 80 A E AS Single Pulsed Avalanche Energy (Note 2) 278 mj I AR Avalanche Current (Note ) 20 A E AR Repetitive Avalanche Energy (Note ) 3.4 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 5 V/ns P D Power Dissipation (T C = 25 o C) 33.8 W - Derate Above 25 o C 0.27 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering, /8 from Case for 5 Seconds 300 o C Thermal Characteristics Symbol Parameter FDPF3860T Unit R θjc Thermal Resistance, Junction to Case, Max. 3.7 o C/W R θja Thermal Resistance, Junction to Ambient, Max. 62.5
Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDPF3860T FDPF3860T TO-220F Tube N/A N/A 50 units Electrical Characteristics T C = 25 o C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250 μa, V GS = 0 V, T J = 25 o C 00 - - V ΔBV DSS Breakdown Voltage Temperature I / ΔT J Coefficient D = 250 μa, Referenced to 25 o C - 0. - V/ o C V DS = 80 V, V GS = 0 V - - I DSS Zero Gate Voltage Drain Current μa V DS = 48 V, T C = 50 o C - - 500 I GSS Gate to Body Leakage Current V GS = ±20 V, V DS = 0 V - - ±00 na On Characteristics V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250 μa 2.5-4.5 V R DS(on) Static Drain to Source On Resistance V GS = 0 V, I D = 5.9 A - 29. 38.2 mω g FS Forward Transconductance V DS = 0 V, I D = 5.9 A - 2 - S Dynamic Characteristics C iss Input Capacitance - 350 800 pf V DS = 25 V, V GS = 0 V, C oss Output Capacitance - 45 90 pf f = MHz C rss Reverse Transfer Capacitance - 60 90 pf Switching Characteristics t d(on) Turn-On Delay Time - 5 40 ns t r Turn-On Rise Time V DD = 50 V, I D = 5.9 A, - 7 45 ns t d(off) Turn-Off Delay Time V GS = 0 V, R G = 6 Ω - 24 60 ns t f Turn-Off Fall Time (Note 4) - 7 25 ns Q g(tot) Total Gate Charge at 0V V DS = 80 V, I D = 5.9 A, - 23 35 nc Q gs Gate to Source Gate Charge V GS = 0 V - 7 - nc Q gd Gate to Drain Miller Charge (Note 4) - 8 - nc Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 20 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 80 A V SD Drain to Source Diode Forward Voltage V GS = 0 V, I SD = 5.9 A - -.3 V t rr Reverse Recovery Time V GS = 0 V, I SD = 5.9 A, - 40 - ns Q rr Reverse Recovery Charge di F /dt = 00 A/μs - 56 - nc Notes:. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 6 mh, I AS = 5.9 A, V DD = 50 V, R G = 25 Ω, starting T J = 25 C. 3. I SD 5.9 A, di/dt 200 A/μs, V DD BV DSS, starting T J = 25 C. 4. Essentially independent of operating temperature typical characteristics. 2
Typical Performance Characteristics ID,Drain Current[A] Figure. On-Region Characteristics 200 00 0 V GS = 5.0 V 0.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V. 250μs Pulse Test 2. T C = 25 o C 0. 0 V DS,Drain-Source Voltage[V] Figure 2. Transfer Characteristics. V DS = 20V 2. 250μs Pulse Test 4 5 6 7 8 V GS,Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.4 ID,Drain Current[A] 200 00 0 200 50 o C -55 o C 25 o C RDS(ON) [Ω], Drain-Source On-Resistance Capacitances [pf] 0.2 0.0 0.08 0.06 0.04 V GS = 0V V GS = 20V *Note: T J = 25 o C 0.02 0 25 50 75 00 I D, Drain Current [A] Figure 5. Capacitance Characteristics 2000 500 000 500 C iss C oss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note:. V GS = 0V 2. f = MHz IS, Reverse Drain Current [A] VGS, Gate-Source Voltage [V] 00 0 0 50 o C 25 o C. V GS = 0V 2. 250μs Pulse Test 0.0 0.4 0.8.2.4 V SD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 8 6 4 2 V DS = 80V V DS = 50V V DS = 25V 0 0. 0 V DS, Drain-Source Voltage [V] *Note: I D = 5.9A 30 0 0 5 0 5 20 25 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature.2..0 0.9. V GS = 0V 2. I D = 250μA 0.8-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 00 RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0.5.0 0.5. V GS = 0V 2. I D = 5.9A 0.0-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] Figure 0. Maximum Drain Current vs. Case Temperature 25 ID, Drain Current [A] 0 Operation in This Area is Limited by R DS(on) 00μs ms 0ms 00ms DC SINGLE PULSE 0. T C = 25 o C T J = 50 o C R θjc = 3.7 o C/W 0.0 0. 0 00 V DS, Drain-Source Voltage [V] ID, Drain Current [A] 20 5 0 5 0 25 50 75 00 25 50 T C, Case Temperature [ o C] Figure. Transient Thermal Response Curve 5 Z θjc (t), Thermal Response [ o C/W] Thermal Response [Z θjc ] 0.5 0.2 0. 0.05 0. 0.02 0.0 Single pulse. Z θjc (t) = 3.7 o C/W Max. 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) 0.0 0-5 0-4 0-3 0-2 0-0 0 0 0 2 0 3 t, Rectangular Pulse Duration [sec] [sec] P DM t t 2 4
I G = const. Figure 2. Gate Charge Test Circuit & Waveform V DS R L V DS 90% R G V GS V DD V 0V GS DUT 0% V GS t d(on) t r t d(off) tf t on t off Figure 3. Resistive Switching Test Circuit & Waveforms V GS Figure 4. Unclamped Inductive Switching Test Circuit & Waveforms 5
V GS R G DUT I SD Driver + V DS _ L Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 0V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop Figure 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms 6
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